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Details, datasheet, quote on part number:MSAGX60F60A
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Datasheet text preview:
2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256
MSAGX60F60A MSAHX60F60A
600 Volts 60 Amps 2.9 Volts vce(sat)
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Features
· · · ·
· · · ·
Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity available upon request: MSAH(G)60F60B high frequency IGBT, low switching losses anti-parallel FREDiode (MSAHX60F60A only)
Maximum Ratings @ 25°C (unless otherwise specified) °
DESCRIPTION Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter)
@ TJ 25°C
SYMBOL BVCES BVCGR VGES VGEM IC25 IC90 ICM Imax PD Tj Tstg IS ISM JC
MAX. 600 600 +/-20 +/-30 60 32 120 64 300 -55 to +150 -55 to +150 32 100 0.4
UNIT Volts Volts Volts Volts Amps Amps Amps Watts °C °C Amps Amps °C/W
Collector-to-Gate Breakdown Voltage @ TJ 25°C, RGS= 1 M Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage Continuous Collector Current Tj= 25°C
90°C Tj=
Peak Collector Current, pulse width limited by Tjmax, Safe Operating Area (RBSOA) @ VGE= 15V, L= 100µH (clamped inductive
load), RG= 4.7, Tj= 125°C, VCE= 0.8 x VCES
Power Dissipation Junction Temperature Range Storage Temperature Range Continuous Source Current (Body Diode, MSAHX60F60A only) Pulse Source Current (Body Diode, MSAHX60F60A only) Thermal Resistance, Junction to Case
Mechanical Outline
COLLECTOR
EMITTER (MS...A) GATE (MS...B)
.A) EMITTER (MS...B)
Datasheet# MSC0298A
MSAGX60F60A MSAHX60F60A
Electrical Parameters @ 25°C (unless otherwise specified) °
DESCRIPTION
Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) Gate Threshold Voltage Gate-to-Emitter Leakage Current Collector-to-Emitter Leakage Current (Zero Gate Voltage Collector Current) Collector-to-Emitter Saturation Voltage (1)
SYMBOL
BVCES VGE(th) IGES ICES VCE(sat)
CONDITIONS
VGS = 0 V, I C = 250 µA VCE = VGE, IC = 250 µA VGE = ± 20VDC, VCE = 0 VCE =0.8·BVCES VGE = 0 V VGE= 15V, I C= 30A I C= 60A I C= 30A VCE 10 V; I C = 30 A
MIN
600 2.5
TYP.
MAX
5.0 ±100 ±200 200 1000 2.9
UNIT
V V nA µA V
T J = 25°C T J = 125°C TJ = 25°C T J = 125°C T J = 25°C T J = 25°C T J = 125°C 15
Forward Transconductance (1) Input Capacitance Output Capacitance Reverse Transfer Capacitance INDUCTIVE LOAD, Tj= 25°C ° Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Off Energy INDUCTIVE LOAD, Tj= 125°C ° Turn-on Delay Time Rise Time On Energy Turn-off Delay Time Fall Time Off Energy Total Gate Charge Gate-to-Emitter Charge Gate-to-Collector (Miller) Charge Antiparallel diode forward voltage (MSAHX60F60A only)
gfs Cies Coes Cres td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Qg Qge Qgc VF
2.2 3.5 2.2 20 2500 230 70 25 30 175 125 1.3 25 35 1 250 260 4 125 23 50
S pF
VGE = 0 V, V CE = 25 V, f = 1 MHz
VGE = 15 V, V CE = 480 V, IC = 30 A, R G = 4.7 , L= 100 µH note 2, 3
175
ns ns ns ns mJ ns ns mJ ns ns mJ nC
VGE = 15 V, V CE = 480 V, IC = 30 A, R G = 4.7 , L= 100 µH note 2, 3
VGE = 15 V, V CE = 300V, I C = 30A IE= 15 A IE= 15 A IE= 30 A IE= 50 A IE= 10 A, IE= 30 A, IE= 10 A, IE= 30 A, IE= 10 A, IE= 30 A, T J = 25 °C T J = 150 °C T J = 25 °C T J = 25 °C dIE/dt= 100 A/us, T J= 25°C dIE/dt= 100 A/us, T J= 25°C dIE/dt= 100 A/us, T J= 25°C dIE/dt= 100 A/us, T J= 25°C dIE/dt= 100 A/us, T J= 25°C dIE/dt= 100 A/us, T J= 25°C
150 35 75 1.5 1.3
1.7 1.9 100 140 160 320 3 4.2
Antiparallel diode reverse recovery time (MSAHX60F60A only) Antiparallel diode reverse recovery charge (MSAHX60F60A only) Antiparallel diode peak recovery current (MSAHX60F60A only)
trr Qrr IRM
V V V V ns ns nC nC A A
Notes
(1) (2) (3) (4) Pulse test, t 300 µ s, duty cycle 2% switching times and losses may increase for larger V CE and/or R G values or higher junction temperatures. switching losses include "tail" losses Microsemi Corp. does not manufacture the igbt die; contact company for details.
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