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Part: MSAGX75L60A
Category:
Discrete
-> IGBTs (Insulated Gate Bipolar Transistors)
Description: Insulated Gate Bipolar Transistor, Package : Coolpack1
Company: Microsemi Corporation
Datasheet: Download MSAGX75L60A datasheet File size : 381 kB
Request For quote: Find where to buy MSAGX75L60A
Datasheet text preview:
2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256
MSAGX75L60A
600 Volts 75 Amps 1.8 Volts vce(sat)
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Features
· · · ·
· · ·
Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity available upon request: MSAGX75L60B low VCE(sat) IGBT, low conduction losses
Maximum Ratings @ 25°C (unless otherwise specified) °
DESCRIPTION Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter)
@ TJ 25°C
SYMBOL BVCES BVCGR VGES VGEM IC25 IC90 ICM Imax PD Tj Tstg JC
MAX. 600 600 +/-20 +/-30 75 60 200 100 300 -55 to +150 -55 to +150 0.25
UNIT Volts Volts Volts Volts Amps Amps Amps Watts °C °C °C/W
Collector-to-Gate Breakdown Voltage @ TJ 25°C, RGS= 1 M Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage Continuous Collector Current Tj= 25°C
Tj= 90°C
Peak Collector Current, pulse width limited by Tjmax, Safe Operating Area (RBSOA) @ VGE= 15V, L= 30µH (clamped inductive
load), R G= 2.7, Tj= 125°C, VCE= 0.8 x V CES
Power Dissipation Junction Temperature Range Storage Temperature Range Thermal Resistance, Junction to Case
Mechanical Outline
COLLECTOR
GATE
EMITTER
Datasheet# MSC0297A
MSAGX75L60A
Electrical Parameters @ 25°C (unless otherwise specified) °
DESCRIPTION
Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) Gate Threshold Voltage Gate-to-Emitter Leakage Current Collector-to-Emitter Leakage Current (Zero Gate Voltage Collector Current) Collector-to-Emitter Saturation Voltage (1) Forward Transconductance (1) Input Capacitance Output Capacitance Reverse Transfer Capacitance INDUCTIVE LOAD, Tj= 25°C ° Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Off Energy INDUCTIVE LOAD, Tj= 125°C ° Turn-on Delay Time Rise Time On Energy Turn-off Delay Time Fall Time Off Energy Total Gate Charge Gate-to-Emitter Charge Gate-to-Collector (Miller) Charge
SYMBOL
BVCES VGE(th) IGES ICES VCE(sat) gfs Cies Coes C res td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Qg Qge Qgc
CONDITIONS
VGS = 0 V, I C = 250 µA VCE = VGE, IC = 250 µA VGE = ± 20V DC, VCE = 0 VCE =0.8·BVCES VGE = 0 V VGE= 15V, I C= 60A I C= 60A VCE 10 V; I C = 60 A
MIN
600 2.5
TYP.
MAX
5.0 ±100 ±200 200 1000 1.8
UNIT
V V nA µA V S pF
T J = 25°C T J = 125°C TJ = 25°C T J = 125°C T J = 25°C T J = 125°C 30
1.8 40 4000 340 100 50 210 600 500 16 50 240 3 1000 1000 26 200 35 80
VGE = 0 V, V CE = 25 V, f = 1 MHz
VGE = 15 V, V CE = 480 V, IC = 60 A, R G = 2.7 , L= 100 µH note 2, 3
800 700
ns ns ns ns mJ ns ns mJ ns ns mJ nC
VGE = 15 V, V CE = 480 V, IC = 60 A, R G = 2.7 , L= 100 µH note 2, 3
VGE = 15 V, V CE = 300V, I C = 50A
250 50 100
Notes
(1) (2) (3) (4) Pulse test, t 300 µ s, duty cycle 2% switching times and losses may increase for larger V CE and/or R G values or higher junction temperatures. switching losses include "tail" losses Microsemi Corp. does not manufacture the igbt die; contact company for details.
Others parts begin by ms
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