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Details, datasheet, quote on part number:MX043G
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Datasheet text preview:
2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256
MX043J MX043G
200 Volts 44 Amps 50 m
Features
· · · · · · · · · · · Harris FSC260R die total dose: 100 kRAD(Si) within pre-radiation parameter limits dose rate: 3 x 109 RAD(Si)/sec @ 80%BVDSS typical dose rate: 2 x 1012 RAD(Si)/sec @ ID IDM typical neutron: 1013 neutrons/cm2 within pre-radiation parameter limits photocurrent: 17 nA/RAD(Si)/sec typical rated Safe Operating Area Curve for Single event Effects rugged polysilicon gate cell structure with ultrafast body diode low inductance surface mount power package available with "J-leads" (MX043J) or "gullwing-leads" (MX043G) very low thermal resistance reverse polarity available upon request add suffix "R"st
Maximum Ratings @ 25° (unless otherwise C speciRIed)ON D E S C fi P T I
Drain-to-Source Breakdown Voltage (Gate Shorted to Source)
@ TJ 25° C
RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE POWER MOSFET
SYMBOL B V DSS BVDGR VG S VG S M ID25 ID100 ID M IAR EA R EA S PD Tj Tstg IS IS M JC MAX. 200 200 +/-20 +/-30 44 28 132 44 tbd tbd 300 -55 to +125 -55 to +125 44 132 0.25 UNIT Volts Volts Volts Volts Amps Amps Amps mJ mJ Watts ° C ° C Amps Amps ° /W C grams VDSmax 200V 200V 160V 100V 40V
Drain-to-Gate Breakdown Voltage @ TJ 25° , RGS= 1 M C Continuous Gate-to-Source Voltage Transient Gate-to-Source Voltage Continuous Drain Current Peak Drain Current, pulse width limited by TJmax Repetitive Avalanche Current Repetitive Avalanche Energy Single Pulse Avalanche Energy Power Dissipation Junction Temperature Range Storage Temperature Range Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Thermal Resistance, Junction to Case Weight SINGLE EVENT EFFECTS SAFE OPERATING AREA (SEESOA) Ion Species Ni Br Br Br Br
Tj= 25° C Tj= 100° C
Notes
(1) (2)
typical LET (MeV/mg/cm) 26 37 37 37 37
typical range (µ) 43 36 36 36 36
VGS -20V -5V -10V -15V -20V
Pulse test, t 300 µ s, duty cycle 2% Microsemi Corp. does not manufacture the mosfet die; contact company for details.
Datasheet# MSC0857
MX043J MX043G
Electrical Parameters @ 25° (unless otherwise specified) C
DESCRIPTION
Drain-to-Source Breakdown Voltage (Gate Shorted to Source) Temperature Coefficient of the Drain-to-Source Breakdown Voltage Gate Threshold Voltage
SYMBOL
B V DSS B V DSS/ TJ V GS(th)
CONDITIONS
V GS = 0 V, ID = 1 mA
MIN
200
TYP.
tbd
MAX
UNIT
V V/° C
V DS = V GS, ID = 1 mA,
Gate-to-Source Leakage Current IGSS Drain-to-Source Leakage Current (Zero Gate Voltage Drain Current) Static Drain-to-Source On-State Resistance (1) Forward Transconductance (1) Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain (Miller) Charge Body Diode Forward Voltage (1) IDSS RDS(on) gfs Ciss Coss Crss Td(on) tr td(off) tf Qg(on) Qgs Qgd V SD trr
V GS = ± 20 VDC, V DS = 0 V DS =0.8· V DSS B V GS = 0 V V GS= 12V, ID= 28A ID= 25A V DS 10 V; ID = 50 A
TJ = 25° C TJ = 125° C TJ = -55° C TJ = 25° C TJ = 125° C TJ = 25° C TJ = 125° C TJ = 25° C TJ = 125° C
1.5 0.5 -
26
0.043 32 4400 900 280
4.0 5.0 ± 00 1 ± 00 2 25 250 0.050 0.093
V V V nA µA µA S pF
V GS = 0 V, V DS = 25 V, f = 1 MHz
V GS = 12 V, V DS = 100 V, ID = 44 A, RG = 2.35
V GS = 12 V, V DS = 100V, ID = 44 A
IF = IS , V GS = 0 V IF = 10 A, -di/dt = 100 A/µs, TJ =25 ° C
0.6
160 30 83 -
40 95 100 25 180 38 93 1.8 560
ns
nC
V ns
MRecrhe RecoverylTime (Body Diode) eve s anica Outline ShelFitTM
100% KND (Known-Good-Die) SCREENING
a. b.
100% die probe at T ambient= 25° for BVDSS, VGS th, IDSS, IGSS, VSD, RDSon C 100% Visual Inspection i.a.w. method 2072 of MIL-STD-750
DIE ELEMENT EVALUATION
a. b. c. d. e. f. g. h. i. j. k. l. m.
Wafer Lot Evaluation Testing (WLAT) i.a.w. method 5001 of MIL-STD-750, including SEM Unclamped Inductive Switching (IAS) i.a.w. method 3470 of MIL-STD-750 at VGS peak= 15 V, L= 100µH, I AS= 132 A Gate Stress Test for 250 µs at VGS= 30 Vdc. Safe Operating Area i.a.w. method 3474 of MIL-STD-750 at VDS= 160 V, ID= 2.8 A for 10 ms High Temperature Gate Bias i.a.w. method 1042 cond.B of MIL-STD-750: 48 hrs at T ambient= 150° , Drain shorted to Source and C V G S = 16 V High Temperature Reverse Bias i.a.w. method 1042 cond.A of MIL-STD-750: 240 hrs at T ambient= 150° , Gate shorted to Source C and VDS= 160 V Final DC Electrical Testing at T ambient= 25° , 125° and -55° C C C Temperature Cycling i.a.w. method 1051 of MIL-STD-750, 100 cycles, -55° to +150° C C Group A Electrical Testing including dynamic parameters Steady State Operational Life Bias i.a.w. method 1042 cond.A of MIL-STD-750: 1000 hrs at T ambient= 150° , Gate shorted to Source C and VDS= 160 V Final DC Electrical Testing at T ambient= 25° , 125° and -55° C C C Die Attach Evaluation i.a.w. method 2017 of MIL-STD-750 Bond Strength Evaluation i.a.w. 2037 of MIL-STD-750
RADIATION EVALUATION
Total Dose Irradiation i.a.w. method 1019 of MIL-STD-750, dose= 100 kRAD, Drain shorted to Source, VGS= 10V Total Dose Irradiation i.a.w. method 1019 of MIL-STD-750, dose= 100 kRAD, Gate shorted to Source, VDS= 160V Evaluation criteria: no degradation of the DC electrical parameters exceeding the data sheet limits allowed after total dose irradiation.
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