Details, datasheet, quote on part number: UPR60
CategoryDiscrete => Diodes & Rectifiers => Ultra Fast Recovery Rectifiers
DescriptionUltra Fast Rectifier (less Than 100ns), Package : Powermite
CompanyMicrosemi Corporation
DatasheetDownload UPR60 datasheet
Find where to buy


Features, Applications


Microsemi's Powermite SMT package offers high efficiency ultra fast rectifiers with the power handling capabilities previously found only in much larger packages. They are ideal for SMD applications that operate at high frequencies.

The Powermite package's full metallic bottom eliminates the possibility of solder flux entrapment during assembly, and its unique locking tab acts as an integral heat sink. Its innovative design makes this device ideal for use with automatic insertion equipment.

!"High Power Surface Mount Package !"Ultra-fast Recovery Time (30ns) !"Low Forward Voltage !"Compatible with Automatic Insertion Equipment !"Full Metallic Bottom Eliminates Flux Entrapment !"Integral Heat / Sink/Locking Tabs

!"Switching and Regulating Power Supplies !"Charge Pump Circuits !"Reduces reverse recovery loss due to low IRM !"Replaces wire bonded die with a flip chip package

IMPORTANT: For the most current data, consult MICROSEMI's website:

ABSOLUTE MAXIMUM RATINGS Maximum Reverse Voltage Average Power Dissipation @ TTab = 75C Thermal Resistance Junction to Tab Thermal Resistance Junction to Bottom Non-Repetitive Sinusoidal Surge Current (8.3mS) Operating and Storage Temperature * WHEN MOUNTED A PC BOARD WITH 2 OZ. COPPER. SPICE MODEL UPR60 SURFACE MOUNT RECTIFIER

ELECTRICAL SPECIFICATIONS Test Forward Voltage Vf Reverse Current IR Reverse Recovery Time Trr Min Typ Max Units A ns Conditions

Watertown Division 580 Pleasant Street Watertown, 02472 617-926-0404, Fax: 617-924-1235
Watertown Division 580 Pleasant Street Watertown, 02472 617-926-0404, Fax: 617-924-1235
Watertown Division 580 Pleasant Street Watertown, 02472 617-926-0404, Fax: 617-924-1235


Some Part number from the same manufacture Microsemi Corporation
UPR802 Ultra Fast Rectifier (less Than 100ns), Package : Powermite_3
UPRLED630 Led, Package : Optomite
UPS115U Schottky Rectifier, Package : Powermite
UPS315 Schottky Rectifier, Package : Powermite_3
UPS520 Schottky Rectifier, Package : Powermite
UPS615 Schottky Rectifier, Package : Powermite_3
UPSC200 Silicon Carbide (SiC) Schottky, Package : Powermite
UPSC203 Silicon Carbide (SiC) Schottky, Package : Powermite_3
UPSC400 Silicon Carbide (SiC) Schottky, Package : Powermite

1N5832 : Schottky Rectifier, Package : DO-5

1N5931B : Zener Voltage Regulator Diode

CDLL6675 : Schottky Rectifier, Package : DO-213AA

LX8586-00CV : Positive Adjustable Low Drop Out Regulator - Positive Adjustable, Package : TO-220_Power

JANTXV1N2820A : Silicon 500 mW Zener Diodes

JANTXV1N5523AUR-1 : Silicon 500 mW Zener Diodes

RH4583A-1 : 6.4 Volt Temperature Compensated Zener Reference Diodes

G2160N1EN1S : Silicon Power Rectifier Assemblies Plate Heatsink

Same catergory

1N941 : 0TC Reference Voltage Zener, Package : DO-35. 1N943B, 1N944B AND 1N945B AVAILABLE IN JAN, JANTX AND JANTXV PER 1N943B-1, 1N944B-1 AND 1N945B-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/157 11.7 VOLT NOMINAL ZENER VOLTAGE TEMPERATURE COMPENSATED ZENER REFERENCE DIODES METALLURGICALLY BONDED Operating Temperature: to +175C Storage Temperature: +175C DC Power Dissipation: @ +50C.

BT148W-400R : Thyristors Logic Level. Glass passivated, sensitive gate thyristors in a plastic envelope suitable for surface mounting, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. SYMBOL VDRM, VRRM IT(AV) IT(RMS).

CMPT5551 : SOT/Surface Mount. NPN Silicon Transistor. : The CENTRAL SEMICONDUCTOR CMPT5551 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications. MARKING CODE: 1FF MAXIMUM RATINGS: (TA=25C) SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector.

DSE015 : Silicon Epitaxial Planar Type, High-speed Switching Diode. Very small-sized package permitting DSE015applied sets to be made small and slim. Fast switching speed. s Parameter Peak Reverse Voltage Reverse Voltage Surge Current Average Rectified Current Peak Forward Current Junction Temperature Storage Temperature Symbol VRM VR IFSM IO IFM Tj Tstg 1 s Conditions Ratings to +150 Unit mA C Parameter Forward Voltage.

FQI11P06 : Enhancement P-Channel. 60V P-channel QFET. These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices.

MEO500-06DA : 600V Fast Recovery Epitaxial Diode (FRED) Module. Fast Recovery Epitaxial Diode (FRED) Module Test Conditions = 75C; rectangular, < 10 ms; rep. rating, pulse width limited by TVJM TVJ ms (50 Hz), sine ms (60 Hz), sine TVJ ms (50 Hz), sine ms (60 Hz), sine I2t TVJ ms (50 Hz), sine ms (60 Hz), sine International standard package with DCB ceramic base plate Planar passivated chips Short recovery time.

NTE287 : Silicon Complementary Transistors High Voltage, General Purpose Amplifier.

STD95N4F3 : Power MOSFETs N-channel 40V - 5.4mOhm - 80A - DPAK - TO-220 - IPAK STripFET Power MOSFET.

IRF6727MTRPBF : A 30V Single N-Channel HEXFET Power MOSFET A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MT package rated at 32 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number..

05002-2R7CBZB : CAPACITOR, CERAMIC, MULTILAYER, 200 V, BP, 0.0000027 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; Capacitance Range: 2.70E-6 microF ; Capacitance Tolerance: 4 (+/- %) ; WVDC: 200 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style: Surface Mount Technology.

SF31-AP : 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD. s: Package: ROHS COMPLIANT, PLASTIC PACKAGE-2 ; Number of Diodes: 1 ; VRRM: 50 volts ; IF: 3000 mA ; trr: 0.0350 ns ; RoHS Compliant: RoHS.

VF60100C-M3/4W : RECTIFIER DIODE. s: Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier.

X663F.01-10-100 : CAPACITOR, METALLIZED FILM, POLYESTER, 100 V, 0.01 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Technology: Film Capacitors ; Applications: General Purpose ; Electrostatic Capacitors: Polyester ; Capacitance Range: 0.0100 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 100 volts ; Mounting Style: Through Hole ; Operating.

1SS362FV : 0.1 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE. s: Diode Type: General Purpose ; IF: 100 mA ; Package: 1-1Q1A, VESM, 3 PIN ; Pin Count: 3 ; Number of Diodes: 2.

32KB6601A : CAPACITOR, METALLIZED FILM, MIXED (PAPER+PLASTIC), 1 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Technology: Film Capacitors ; Applications: General Purpose ; Electrostatic Capacitors: MIXED (PAPER+PLASTIC) ; Capacitance Range: 1 microF ; Capacitance Tolerance: 6 (+/- %) ; Mounting Style: Through Hole ; Operating Temperature:.

0-C     D-L     M-R     S-Z