Details, datasheet, quote on part number: 68731H
Part68731H
CategoryCommunication => Wireless => Amplifiers => Module->50-200 MHz
TitleModule->50-200 MHz
DescriptionRF Power Module, Silicon MOS Fet Power Amplifier 150-175mhz, 7w, FM Portable Radio
CompanyMitsubishi Electronics America, Inc.
DatasheetDownload 68731H datasheet
  

 

Features, Applications

PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY 3 VDD : DRAIN BIAS SUPPLY : RF OUTPUT 5 GND: FIN
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)

Symbol VDD VGG Pin PO TC (OP) Tstg Parameter Supply voltage Gate bias voltage Input power Output power Operation case temperature Strage temperature Conditions f=150-175MHz, ZG=ZL=50 Ratings to +110 Unit W °C

Symbol 2fO in Frequency range Output power Total efficiency 2nd. harmonic Input VSWR Stability Load VSWR tolerance Parameter Test conditions Limits Min 7 50 Max 175 Unit MHz W % dBc -

Note. Above parameters, ratings, limits and test conditions are subject to change. Nov. ´97
SILICON MOS FET POWER AMPLIFIER, 7W, FM PORTABLE RADIO TYPICAL PERFORMANCE DATA
OUTPUT POWER, TOTAL EFFICENCY VS. INPUT POWER 10 100
OUTPUT POWER, TOTAL EFFICIENCY VS. GATE VOLTAGE 10 100
OUTPUT POWER, TOTAL EFFICIENCY VS. GATE VOLTAGE 10 100

 

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