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Details, datasheet, quote on part number:FD1500BV-90DA
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| Part: | FD1500BV-90DA |
| Category: | Discrete => Diodes & Rectifiers => General Purpose Rectifiers |
| Description: | Soft Recovery Diode For High Power, High Frequency, Press Pack Type |
| Company: | Mitsubishi Electronics America, Inc. |
| Datasheet: | Download FD1500BV-90DA datasheet File size : 34 kB |
| Request For quote: | Find where to buy FD1500BV-90DA
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Datasheet text preview:
MITSUBISHI SOFT RECOVERY DIODES
FD1500BV-90DA
HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
FD1500BV-90DA
OUTLINE DRAWING
Dimensions in mm
6.35 × 10.8 3.5 ± 0.2 2.2 ± 0.2DEPTH
0.4MIN
85 ± 0.2
TYPE NAME 12 ± 2
26 ± 0.5
¡IF(AV) Average forward current ............ 1500A ¡VRRM Repetitive peak reverse voltage .......... 4500V ¡QRR Reverse recovery charge ........ 3600µC ¡Press pack type
0.4MIN
85 ± 0.2 120MAX 3.5 ± 0.2 2.2 ± 0.2DEPTH
APPLICATION Free wheel diode for GCT Thyristor High-power inverters Power supplies as high frequency rectifiers
MAXIMUM RATINGS
Symbol VRRM VRSM VR(DC) VLTDS Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Long term DC stability voltage at 100FIT Voltage class 4500 4500 3600 3000 Unit V V V V
Symbol IF(RMS) IF(AV) IFSM I2t di/dt Tj T stg -- --
Parameter RMS forward current Average forward current Surge forward current Current-squared, time integration Critical rate of rise of reverse recovery current Junction temperature Storage temperature Mounting force required Weight
Conditions Applied for all conduction angles f = 60Hz, sine wave = 180°, Tf = 65°C One half cycle at 60Hz, Tj=125°C IFM = 1500A, VR 2250V, Tj = 125°C, With clamp circuit (see Fig. 1, 2)
Ratings 2350 1500 30 3.7 × 106 2000 20 ~ 125 40 ~ 150 39 ~ 55 --
10.5 ± 1
Unit A A kA A 2s A/µs °C °C kN g
(Recommended value 47kN) Typical 1220g
Mar. 2001
MITSUBISHI SOFT RECOVERY DIODES
FD1500BV-90DA
HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
ELECTRICAL CHARACTERISTICS
Symbol IRRM V FM QRR Erec tb/ta Rth(j-f) Parameter Repetitive peak reverse current Forward voltage Reverse recovery charge Reverse recovery loss Soft recovery rate Thermal resistance Test conditions VRM = 4500V, Tj = 125°C IFM = 3400A, Tj = 125°C IFM = 1500A, di/dt = 1000A/µs, VR = 2250V, Tj = 125°C With clamp circuit (see Fig. 1, 2) Junction to fin Min. -- -- -- -- -- -- Limits Typ. -- -- -- 8.0 2 -- Max. 150 3.5 3600 -- -- 0.011 Unit mA V µC J/P -- °C/W
Fig. 1 (Definition of reverse recovery waveform)
Fig. 2 (Reverse recovery test circuit)
QRR = (trr × IRM)/2
50%IFM IFM trr ta 0 IRM
di/dt(0~50%IFM)
Di L(load) CDi Lc C Di GCT
Cc Rc Di : FD1500BV-90DA Cc : 6µF Rc = 2 Lc = 0.3µH Rc Cc
tb
50%IRM 90%IRM
Mar. 2001
MITSUBISHI SOFT RECOVERY DIODES
FD1500BV-90DA
HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
PERFORMANCE CURVES
Erec VS IF (TYPICAL)
REVERSE RECOVERY LOSS Erec (J/P)
FORWARD CURRENT (A)
MAXIMUM FORWARD CHARACTERISTICS 1 04 7 5 3 2 Tj = 125°C 1 03 7 5 3 2 1 02 7 5 3 2 1 01 0 1 2 3 4 5 6 7 8
Tj = 25°C
20 18
CONDITION VR = 2250V, Tj =125°C
16 di/dt = 1000A/µs 14 With clamp circuit 12 10 8 6 4 2 0 0 500 1000 1500 2000 2500 3000
FORWARD VOLTAGE (V)
FORWARD CURRENT IF (A) MAXIMUM THERMAL IMPEDANCE CHARACTERISTIC (JUNCTION TO FIN) 100 2 3 5 7 101 0.018
THERMAL IMPEDANCE (°C/ W)
REVERSE RECOVERY CHARGE QRR (µC)
QRR VS IF (TYPICAL) 10000 9000
CONDITION VR = 2250V, Tj =125°C
0.016 0.014 0.012 0.01 0.008 0.006 0.004 0.002 0 103 2 3 5 7102 2 3 5 7101 2 3 5 7 100 TIME (S)
8000 di/dt = 1000A/µs 7000 With clamp circuit 6000 5000 4000 3000 2000 1000 0 0 500 1000 1500 2000 2500 3000
FORWARD CURRENT IF (A)
Mar. 2001
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