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Details, datasheet, quote on part number:FD500JV-90DA
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| Part: | FD500JV-90DA |
| Category: | Discrete => Diodes & Rectifiers => General Purpose Rectifiers |
| Description: | Soft Recovery Diode For High Power, High Frequency, Press Pack Type |
| Company: | Mitsubishi Electronics America, Inc. |
| Datasheet: | Download FD500JV-90DA datasheet File size : 34 kB |
| Request For quote: | Find where to buy FD500JV-90DA
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Datasheet text preview:
MITSUBISHI SOFT RECOVERY DIODES
FD500JV-90DA
HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
FD500JV-90DA
OUTLINE DRAWING
Dimensions in mm
3.5 ± 0.2 2.2 ± 0.2DEPTH
0.4MIN
TYPE NAME
26 ± 0.5
0.4MIN
47 75MAX 3.5 ± 0.2 2.2 ± 0.2DEPTH
¡IF(AV) Average forward current ..... 500A ¡VRRM Repetitive peak reverse voltage .......... 4500V ¡QRR Reverse recovery charge ........ 1500µC ¡Press pack type
APPLICATION Clamp diode for GCT Thyristor High-power inverters Power supplies as high frequency rectifiers
MAXIMUM RATINGS
Symbol VRRM VRSM VR(DC) Symbol IF(RMS) IF(AV) IFSM I2t di/dt Tj T stg -- -- Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Parameter RMS forward current Average forward current Surge forward current Current-squared, time integration Critical rate of rise of reverse recovery current Junction temperature Storage temperature Mounting force required Weight Conditions Applied for all conduction angles f = 60Hz, sine wave = 180°, Tf =76°C One half cycle at 60Hz, Tj =125°C IFM =500A, VR 2250V, Tj = 125°C (see Fig. 1, 2) Voltage class 4500 4500 3600 Ratings 785 500 10 4.2× 105 2000 20 ~ 125 40 ~ 150 22 ~ 28 -- Unit V V V Unit A A kA A 2s A/µs °C °C kN g
(Recommended value 23.5kN) Typical 530g
Mar. 2001
MITSUBISHI SOFT RECOVERY DIODES
FD500JV-90DA
HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
ELECTRICAL CHARACTERISTICS
Symbol IRRM V FM QRR Erec tb/ta V FP Rth(j-f) Parameter Repetitive peak reverse current Forward voltage Reverse recovery charge Reverse recovery loss Soft recovery rate Forward recovery voltage Thermal resistance Test conditions VRM = 4500V, Tj = 125°C IFM = 1570A, Tj = 125°C IFM = 500A, di/dt = 1000A/µs, VR = 2250V, Tj = 125°C (see Fig. 1, 2) di/dt = 1000A/µs, Tj = 25°C Junction to fin Min. -- -- -- -- -- -- -- Limits Typ. -- -- -- 4.0 2 100 -- Max. 80 3.5 1500 -- -- -- 0.027 Unit mA V µC J/P -- V °C/W
Fig. 1 (Definition of reverse recovery waveform)
Fig. 2 (Reverse recovery test circuit)
QRR = (trr × IRM)/2
L(line)
50%IFM IFM trr ta 0 IRM
di/dt(0~50%IFM) (Note 1)
VD = 2250V
L(load)
FD500JV Rc CDi GCT Cc Cc : 6µF Rc = 2
tb
50%IRM 90%IRM
di/dt = VD/L(line) = 2250V/1.125µH = 2000A (Note 1)
Note 1 In case of 2000A/µs, definition of di/dt is by VD and inductance value of L (line) as follows. di/dt = VD/L (line) = 2250V/1.125µH = 2000A/µs
Mar. 2001
MITSUBISHI SOFT RECOVERY DIODES
FD500JV-90DA
HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
PERFORMANCE CURVES
Erec VS IF (TYPICAL)
REVERSE RECOVERY LOSS Erec (J/P)
FORWARD CURRENT (A)
MAXIMUM FORWARD CHARACTERISTICS 1 04 7 5 3 Tj = 125°C 2 1 03 7 5 3 2 1 02 7 5 3 2 1 01 0 1 2 3 4 5 6 7 8
Tj = 25°C
10 9
CONDITION VR = 2250V, Tj =125°C
8 di/dt = 1000A/µs 7 6 5 4 3 2 1 0 0 200 400 600 800 1000 1200
FORWARD VOLTAGE (V)
FORWARD CURRENT IF (A) MAXIMUM THERMAL IMPEDANCE CHARACTERISTIC (JUNCTION TO FIN) 100 2 3 5 7 101 0.04
THERMAL IMPEDANCE (°C/ W)
REVERSE RECOVERY CHARGE QRR (µC)
QRR VS IF (TYPICAL) 2600 CONDITION 2400 2200 VR = 2250V, Tj =125°C di/dt = 1000A/µs 2000 1800 1600 1400 1200 1000 800 600 400 200 0 0 200 400 600
0.035 0.03 0.025 0.02 0.015 0.01 0.005 0 103 2 3 5 7102 2 3 5 7101 2 3 5 7 100 TIME (S)
800
1000 1200
FORWARD CURRENT IF (A)
Mar. 2001
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