|
Details, datasheet, quote on part number:FS10UMA-4A
| |
| Part: | FS10UMA-4A |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs => N-Channel |
| Description: | N-channel Power MOSFET High-speed Switching Use: 200v, 10a |
| Company: | Mitsubishi Electronics America, Inc. |
| Datasheet: | Download FS10UMA-4A datasheet File size : 40 kB |
| Request For quote: | Find where to buy FS10UMA-4A
|
| |
Datasheet text preview:
MITSUBISHI Nch POWER MOSFET
tion. hange. cifica c al spe ect to t a fins are subj no his is limit ice: T rametric Not e pa Som
P
MIN RELI
ARY
FS10UMA-4A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf V SD Rth (ch-c) Parameter Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current
(Tch = 25°C)
Test conditions ID = 1mA, VGS = 0V IGS = ±10µA, VDS = 0V VGS = ±20V, VDS = 0V VDS = 200V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 10V ID = 5A, VGS = 10V ID = 5A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz
Limits Min. 200 ±20 -- -- 2.0 -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- 3.0 0.40 2.00 7.0 650 80 25 15 20 80 25 0.95 -- Max. -- ±10 1 4.0 0.52 2.60 -- -- -- -- -- -- -- -- -- 2.78
Unit V V µA mA V V S pF pF pF ns ns ns ns V °C/W
Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance
VDD = 100V, ID = 5A, VGS = 10V, RGEN = RGS = 50
IS = 5A, VGS = 0V Channel to case
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 50 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA
5 3 2
40
101
7 5 3 2
tw = 10µs 100µs
30
20
100
7 5 3 2
1ms 10ms DC Single Pulse
10
101 TC = 25°C 0 0 50 100 150 200
7 5
2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS (TYPICAL) 10
VGS = 20V 10V 6V 5V TC = 25°C Pulse Test
OUTPUT CHARACTERISTICS (TYPICAL) 5.0
TC = 25°C Pulse Test VGS = 20V 10V 6V 5V 4V
DRAIN CURRENT ID (A)
8
DRAIN CURRENT ID (A)
4.0
4.5V
6
PD = 45W 4V
3.0
4
2.0
2
1.0
3.5V
0
0
2
4
6
8
10
0
0
1.0
2.0
3.0
4.0
5.0
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V) Sep.1998
MITSUBISHI Nch POWER MOSFET
tion. hange. cifica c al spe ect to t a fins are subj no his is limit ice: T rametric Not e pa Som
P
MIN RELI
ARY
FS10UMA-4A
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 1.0
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) ()
TC = 25°C Pulse Test
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 10
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V)
TC = 25°C Pulse Test ID = 15A
8
0.8
6
10A
0.6
4
0.4
VGS = 10V 20V
2
5A
0.2 0 101 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A)
0
0
4
8
12
16
20
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS (TYPICAL) 20
5 4 3
FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL)
VDS = 10V Pulse Test TC = 25°C 75°C 125°C
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE yfs (S)
TC = 25°C VDS = 10V Pulse Test
16
2
12
101
7 5 4 3 2
8
4
100
7 5
0
0
4
8
12
16
20
100
2
3 4 5 7 101
2
3 4 5 7 102
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 103
7 5 4 3 2 Ciss
SWITCHING CHARACTERISTICS (TYPICAL) 102
7 td(off) 5 4 tf 3 2 tr
102
7 5 4 3 2 TCh = 25°C f = 1MHZ VGS = 0V 2 3 4 5 7 101 2 Coss
SWITCHING TIME (ns)
CAPACITANCE Ciss, Coss, Crss (pF)
101 td(on)
7 5 4 3 2
Crss
101 0 10
3 4 5 7 102
100 0 10
TCh = 25°C VDD = 100V VGS = 10V RGEN = RGS = 50 2 3 4 5 7 101 2 3 4 5 7 102
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A) Sep.1998
|
|
