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Details, datasheet, quote on part number:FS10VS-12
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| Part: | FS10VS-12 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs => N-Channel |
| Description: | N-channel Power MOSFET High-speed Switching Use: 600v, 10a |
| Company: | Mitsubishi Electronics America, Inc. |
| Datasheet: | Download FS10VS-12 datasheet File size : 43 kB |
| Request For quote: | Find where to buy FS10VS-12
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Datasheet text preview:
MITSUBISHI Nch POWER MOSFET
FS10VS-12
HIGH-SPEED SWITCHING USE
FS10VS-12
OUTLINE DRAWING
r
1.5MAX.
Dimensions in mm 4.5 1.3
10.5MAX.
1.5MAX. 8.6 ± 0.3 9.8 ± 0.5
3.0 0.5
+0.3
0
+0.3 0
1 5 0.8 0.5
qwe wr
2.6 ± 0.4
q
¡VDSS ........ 600V ¡rDS (ON) (MAX) ..... 0.94 ¡ID ......... 10A
q GATE w DRAIN e SOURCE r DRAIN e
TO-220S
APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM PD Tch Tstg --
(Tc = 25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight VGS = 0V VDS = 0V
Conditions
Ratings 600 ±3 0 10 30 150 55 ~ +150
4.5
Unit V V A A W °C °C g
Feb.1999
Typical value
55 ~ +150 1.2
(1 .5 )
MITSUBISHI Nch POWER MOSFET
FS10VS-12
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf V SD Rth (ch-c) Parameter
(Tch = 25°C)
Test conditions ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 600V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 10V ID = 5A, VGS = 10V ID = 5A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz
Limits Min. 600 ±3 0 -- -- 2 -- -- 4.5 -- -- -- -- -- -- -- -- -- Typ. -- -- -- -- 3 0.72 3.6 7.0 1500 170 25 25 35 130 45 1.5 -- Max. -- -- ±1 0 1 4 0.94 4.7 -- -- -- -- -- -- -- -- 2.0 0.83
Unit V V µA mA V V S pF pF pF ns ns ns ns V °C/W
Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance
VDD = 200V, ID = 5A, VGS = 10V, RGEN = RGS = 50
IS = 5A, VGS = 0V Channel to case
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 200
POWER DISSIPATION PD (W) DRAIN CURRENT ID (A)
MAXIMUM SAFE OPERATING AREA 5 3 2 101 7 5 3 2 100 7 5 3 2 101 7 5 tw=10µs 100µs 1ms 10ms TC = 25°C Single Pulse DC
160
120
80
40
0
0
50
100
150
200
2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) VGS=20V 10V 8V 6V PD = 150W
CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) VGS = 20V 10V PD= 8V 150W
DRAIN CURRENT ID (A)
20
10 6V
DRAIN CURRENT ID (A)
16
8
12 TC = 25°C Pulse Test 8 5V 4
6 5V 4
2 TC = 25°C Pulse Test
0
0
10
20
30
40
50
0
0
4
8
12
16
20
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS10VS-12
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 40
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) ()
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 2.0 TC = 25°C Pulse Test 1.6 VGS = 10V 1.2 20V
TC = 25°C Pulse Test 32 ID = 20A 24 15A 16 10A 8 5A 0 0 4 8 12 16 20
0.8
0.4 0 101 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A)
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS (TYPICAL) 40 TC = 25°C VDS=50V Pulse Test 101 7 5
FORWARD TRANSFER ADMITTANCE yfs (S)
FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) VDS = 10V Pulse Test TC = 25°C
DRAIN CURRENT ID (A)
32
24
3 2 75°C 100 7 5 3 2 101 1 10 23 5 7 100 23 5 7 101 125°C
16
8
0
0
4
8
12
16
20
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 5 3 2
CAPACITANCE Ciss, Coss, Crss (pF)
SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5
SWITCHING TIME (ns)
Ciss
103 7 5 3 2 102 7 5 Coss
3 2 102 7 5 3 2 101 101 23
Tch = 25°C VDD = 200V VGS = 10V RGEN = RGS = 50 td(off) tf
td(on) tr 5 7 100 23 5 7 101
3 Tch = 25°C Crss 2 f = 1MHz VGS = 0V 1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A)
Feb.1999
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