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Details, datasheet, quote on part number:FS10VS-9
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| Part: | FS10VS-9 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs => N-Channel |
| Description: | N-channel Power MOSFET High-speed Switching Use: 450v, 10a |
| Company: | Mitsubishi Electronics America, Inc. |
| Datasheet: | Download FS10VS-9 datasheet File size : 43 kB |
| Request For quote: | Find where to buy FS10VS-9
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Datasheet text preview:
MITSUBISHI Nch POWER MOSFET
FS10VS-9
HIGH-SPEED SWITCHING USE
FS10VS-9
OUTLINE DRAWING
r
1.5MAX.
Dimensions in mm 4.5 1.3
10.5MAX.
1.5MAX. 8.6 ± 0.3 9.8 ± 0.5
3.0 0.5
+0.3
0
+0.3 0
1 5 0.8 0.5
qwe wr
2.6 ± 0.4
q
¡VDSS ........ 450V ¡rDS (ON) (MAX) ..... 0.73 ¡ID ......... 10A
q GATE w DRAIN e SOURCE r DRAIN e
TO-220S
APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM PD Tch Tstg --
(Tc = 25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight VGS = 0V VDS = 0V
Conditions
Ratings 450 ±3 0 10 30 125 55 ~ +150
4.5
Unit V V A A W °C °C g
Feb.1999
Typical value
55 ~ +150 1.2
(1 .5 )
MITSUBISHI Nch POWER MOSFET
FS10VS-9
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf V SD Rth (ch-c) Parameter
(Tch = 25°C)
Test conditions ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 450V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 10V ID = 5A, VGS = 10V ID = 5A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz
Limits Min. 450 ±3 0 -- -- 2 -- -- 3.3 -- -- -- -- -- -- -- -- -- Typ. -- -- -- -- 3 0.56 2.8 5.5 1100 135 20 20 30 95 35 1.5 -- Max. -- -- ±1 0 1 4 0.73 3.7 -- -- -- -- -- -- -- -- 2.0 1.0
Unit V V µA mA V V S pF pF pF ns ns ns ns V °C/W
Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance
VDD = 200V, ID = 5A, VGS = 10V, RGEN = RGS = 50
IS = 5A, VGS = 0V Channel to case
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 200
POWER DISSIPATION PD (W) DRAIN CURRENT ID (A)
MAXIMUM SAFE OPERATING AREA 5 3 2 101 7 5 3 2
tw=10µs 100µs 1ms 10ms TC = 25°C Single Pulse DC
160
120
80
40
100 7 5 3 2 101 7 5
0
0
50
100
150
200
2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL)
CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) VGS = 20V 10V PD= 8V 125W TC = 25°C Pulse Test 6V 12
20
10
DRAIN CURRENT ID (A)
16
DRAIN CURRENT ID (A)
8
VGS=20V 10V 8V
6V
6
PD = 125W
8 5V
4
5V
4
2 TC = 25°C Pulse Test
0
0
10
20
30
40
50
0
0
4
8
12
16
20
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS10VS-9
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 40
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) ()
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 2.0 TC = 25°C Pulse Test 1.6
TC = 25°C Pulse Test 32
24
1.2
VGS = 10V 20V
16
ID = 15A 10A 5A
0.8
8
0.4 0 101 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A)
0
0
4
8
12
16
20
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS (TYPICAL) 20 TC = 25°C VDS = 50V Pulse Test 101 7 5
FORWARD TRANSFER ADMITTANCE yfs (S)
FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) VDS = 10V Pulse Test TC=25°C
DRAIN CURRENT ID (A)
16
12
3 2 100 7 5 3 2 101 1 10 23 5 7 100 23
75°C 125°C
8
4
0
0
4
8
12
16
20
5 7 101
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2 103 7 5 3 2 102 7 5 3 2 Coss Ciss
SWITCHING TIME (ns)
SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 3 2 102 7 5 3 2 101 101 23 5 7 100 23 Tch = 25°C VDD = 200V VGS = 10V RGEN = RGS = 50
CAPACITANCE Ciss, Coss, Crss (pF)
td(off)
tf tr td(on) 5 7 101
Crss
101 Tch = 25°C 7 f = 1MHz 5 VGS = 0V 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A)
Feb.1999
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