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Details, datasheet, quote on part number:FS10VSJ-2
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| Part: | FS10VSJ-2 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs => N-Channel |
| Description: | N-channel Power MOSFET High-speed Switching Use: 100v, 10a |
| Company: | Mitsubishi Electronics America, Inc. |
| Datasheet: | Download FS10VSJ-2 datasheet File size : 41 kB |
| Request For quote: | Find where to buy FS10VSJ-2
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Datasheet text preview:
MITSUBISHI Nch POWER MOSFET
FS10VSJ-2
HIGH-SPEED SWITCHING USE
FS10VSJ-2
OUTLINE DRAWING
1.5MAX.
Dimensions in mm
r
10.5MAX.
4.5 1.3
1.5MAX. 8.6 ± 0.3 9.8 ± 0.5
3.0 0.5
+0.3
0 0
+0.3
1 5 0.8
B
0.5
qwe wr
2.6 ± 0.4
¡4V DRIVE ¡VDSS ....... 100V ¡rDS (ON) (MAX) .... 0.19 ¡ID ....... 10A ¡Integrated Fast Recovery Diode (TYP.) ... 95ns
q
q GATE w DRAIN e SOURCE r DRAIN e
TO-220S
APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg --
(Tc = 25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V
Conditions
Ratings 100 ± 20 10 40 10 10 40 30 55 ~ +150 55 ~ +150 1.2
4.5
Unit V V A A A A A W °C °C g
Feb.1999
L = 100µH
(1.5)
MITSUBISHI Nch POWER MOSFET
FS10VSJ-2
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) y fs Ciss C oss C rss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage
(Tch = 25°C)
Test conditions ID = 1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = 100V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 10V ID = 5A, VGS = 4V ID = 5A, VGS = 10V ID = 5A, VDS = 5V VDS = 10V, VGS = 0V, f = 1MHz
Limits Min. 100 -- -- 1.0 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- 1.5 0.14 0.16 0.70 13 800 125 45 14 15 65 40 1.0 -- 95 Max. -- ±0.1 0.1 2.0 0.19 0.21 0.95 -- -- -- -- -- -- -- -- 1.5 4.17 --
Unit V µA mA V V S pF pF pF ns ns ns ns V °C/W ns
Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time
VDD = 50V, ID = 5A, VGS = 10V, RGEN = RGS = 50
IS = 5A, VGS = 0V Channel to case IS = 10A, dis/dt = 100A/µs
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 50
POWER DISSIPATION PD (W) DRAIN CURRENT ID (A)
MAXIMUM SAFE OPERATING AREA 5 3 2 101 7 5 3 2 100 7 5 3 2 101 7 5
tw = 10ms 100ms 1ms 10ms DC
40
30
20
10
TC = 25°C Single Pulse
0
0
50
100
150
200
2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL)
CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) 20
TC = 25°C Pulse Test VGS = 10V 6V 5V 4V
10
TC = 25°C Pulse Test
VGS = 10V 6V 5V 4V 3V
DRAIN CURRENT ID (A)
16
DRAIN CURRENT ID (A)
8
12
3V
6
2.5V
8
PD = 30W
4
4
2
2V
0
0
1.0
2.0
3.0
4.0
5.0
0
0
0.4
0.8
1.2
1.6
2.0
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS10VSJ-2
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 5.0
TC = 25°C Pulse Test
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 0.5
TC = 25°C Pulse Test
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) ()
4.0
0.4
3.0
ID = 15A
0.3
VGS = 4V
2.0
10A
0.2
10V
1.0
5A
0.1 0 101 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A)
0
0
2
4
6
8
10
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS (TYPICAL) 20
Tc = 25°C VDS = 10V Pulse Test
FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102 7 5 4 3 2
TC = 25°C VDS = 5V Pulse Test
DRAIN CURRENT ID (A)
12
FORWARD TRANSFER ADMITTANCE yfs (S)
16
8
4
101 7 5 4 3 2
75°C 125°C
0
0
2
4
6
8
10
100 0 10
2 3 4 5 7 101
2 3 4 5 7 102
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 104 7 5 3 2 103 7 5 3 2 102 7 5 3 Tch = 25°C 2 f = 1MHZ 101
VGS = 0V Ciss
SWITCHING CHARACTERISTICS (TYPICAL) 102 7 5 4 3 2 101 7 5 4 3 2 100 0 10 2 3 4 5 7 101
td(off) tf
SWITCHING TIME (ns)
CAPACITANCE Ciss, Coss, Crss (pF)
tr td(on)
Coss Crss
Tch = 25°C VDD = 50V VGS = 10V RGEN = RGS = 50
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V)
2 3 4 5 7 102
DRAIN CURRENT ID (A)
Feb.1999
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