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Details, datasheet, quote on part number:FS12KMA-4A
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| Part: | FS12KMA-4A |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs => N-Channel |
| Description: | N-channel Power MOSFET High-speed Switching Use: 200v, 12a |
| Company: | Mitsubishi Electronics America, Inc. |
| Datasheet: | Download FS12KMA-4A datasheet File size : 41 kB |
| Request For quote: | Find where to buy FS12KMA-4A
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Datasheet text preview:
MITSUBISHI Nch POWER MOSFET
tion. hange. cifica c al spe ect to t a fins are subj no his is limit ice: T rametric Not e pa Som
P
MIN RELI
ARY
FS12KMA-4A
HIGH-SPEED SWITCHING USE
FS12KMA-4A
OUTLINE DRAWING
10 ± 0.3
6.5 ± 0.3 3 ± 0.3
Dimensions in mm 2.8 ± 0.2
15 ± 0.3
3.2 ± 0.2
14 ± 0.5
3.6 ± 0.3
1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15
0.75 ± 0.15
2.54 ± 0.25
2.54 ± 0.25
4.5 ± 0.2
2.6 ± 0.2
q 10V DRIVE q VDSS ....... 200V q rDS (ON) (MAX) .... 0.40 q ID ........ 12A
GATE DRAIN SOURCE
TO-220FN
APPLICATION CS Switch for CRT Display monitor, Switch mode power supply, etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IDA PD Tch Tstg V iso --
(Tc = 25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight VGS = 0V VDS = 0V
Conditions
Ratings 200 ±20 12 36 12 32 55 ~ +150 55 ~ +150 2000 2.0
Unit V V A A A W °C °C V g Sep.1998
L = 200µH
AC for 1minute, Terminal to case Typical value
MITSUBISHI Nch POWER MOSFET
tion. hange. cifica c al spe ect to t a fins are subj no his is limit ice: T rametric Not e pa Som
P
MIN RELI
ARY
FS12KMA-4A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf V SD Rth (ch-c) Parameter Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current
(Tch = 25°C)
Test conditions ID = 1mA, VGS = 0V IGS = ±10µA, VDS = 0V VGS = ±20V, VDS = 0V VDS = 200V, VGS = 0V ID = 1mA, VDS = 10V ID = 6A, VGS = 10V ID = 6A, VGS = 10V ID = 6A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz
Limits Min. 200 ±20 -- -- 2.0 -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- 3.0 0.30 1.80 8.0 700 95 30 15 20 110 35 0.95 -- Max. -- ±10 1 4.0 0.40 2.40 -- -- -- -- -- -- -- -- -- 3.91
Unit V V µA mA V V S pF pF pF ns ns ns ns V °C/W
Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance
VDD = 100V, ID = 6A, VGS = 10V, RGEN = RGS = 50
IS = 6A, VGS = 0V Channel to case
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 40 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA
5 3 2
32
101
7 5 3 2
tw = 10µs 100µs 1ms 10ms DC Single Pulse
24
16
100
7 5 3 2
8
101 TC = 25°C 0 0 50 100 150 200
7 5
2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS (TYPICAL) 20
VGS = 20V 10V 8V 6V
OUTPUT CHARACTERISTICS (TYPICAL) 10
VGS = 20V 10V 8V
DRAIN CURRENT ID (A)
16
DRAIN CURRENT ID (A)
8
4.5V
5V
12
TC = 25°C Pulse Test 4V
6
PD = 32W
8
PD = 32W
4
4.0V
4
2
TC = 25°C Pulse Test
0
0
4
8
12
16
20
0
0
2
4
6
8
10
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V) Sep.1998
MITSUBISHI Nch POWER MOSFET
tion. hange. cifica c al spe ect to t a fins are subj no his is limit ice: T rametric Not e pa Som
P
MIN RELI
ARY
FS12KMA-4A
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 0.5
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) ()
TC = 25°C Pulse Test
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 20
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V)
TC = 25°C Pulse Test
16
0.4
12
ID = 18A
0.3
VGS = 10V 20V
8
0.2
4
12A 6A
0.1 0 101 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A)
0
0
4
8
12
16
20
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS (TYPICAL) 20
5 4 3
FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL)
VDS = 10V Pulse Test TC = 25°C 75°C 125°C
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE yfs (S)
TC = 25°C VDS = 10V Pulse Test
16
2
12
101
7 5 4 3 2
8
4
100
7 5
0
0
4
8
12
16
20
100
2
3 4 5 7 101
2
3 4 5 7 102
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 104
7 5 3 2 2
SWITCHING CHARACTERISTICS (TYPICAL)
td(off)
102
SWITCHING TIME (ns)
7 5 4 3 2 tf
CAPACITANCE Ciss, Coss, Crss (pF)
103
7 5 3 2
Ciss
tr
102
7 5 3 TCh = 25°C 2 f = 1MHZ VGS = 0V 2 3 4 5 7 101 2
Coss Crss
101 td(on)
7 5 4 3 2 TCh = 25°C VDD = 100V VGS = 10V RGEN = RGS = 50 2 3 4 5 7 101 2 3 4 5 7 102
101 0 10
3 4 5 7 102
100
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A) Sep.1998
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