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Details, datasheet, quote on part number:FS12KMA-5A
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| Part: | FS12KMA-5A |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs => N-Channel |
| Description: | N-channel Power MOSFET High-speed Switching Use: 250v, 12a |
| Company: | Mitsubishi Electronics America, Inc. |
| Datasheet: | Download FS12KMA-5A datasheet File size : 59 kB |
| Request For quote: | Find where to buy FS12KMA-5A
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Datasheet text preview:
MITSUBISHI Nch POWER MOSFET MITSUBISHI Nch POWER MOSFET
FMA MA-5 FS12KS12K-5A A
HI -SP SPE SWITCHING USE HIGHGH-EED ED SWITCHING USE
FS12KMA-5A
OUTLINE DRAWING
10 ± 0.3
Dimensions in mm
2.8 ± 0.2
15 ± 0.3
3.2 ± 0.2
14 ± 0.5
3.6 ± 0.3
1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15
6.5 ± 0.3
3 ± 0.3
0.75 ± 0.15
2.54 ± 0.25
2.54 ± 0.25
2.6 ± 0.2
G 10V DRIVE G VDSS ....... 250V G rDS (ON) (MAX) ..... 0.40 G ID ........ 12A
GATE DRAIN SOURCE
TO-220FN
APPLICATION CRT Display monitor, SMPS, etc.
MAXIMUM RATINGS
Symbol V DSS VGSS ID IDM IDA PD Tch Tstg Viso --
(Tc = 25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight VGS = 0V VDS = 0V
Conditions
Ratings 250 ±20 12 36 12 35 55 ~ +150 55 ~ +150 2000 2.0
4.5 ± 0.2
Unit V V A A A W °C °C V g Sep. 2001
L = 200µH
AC for 1minute, Terminal to case Typical value
MITSUBISHI Nch POWER MOSFET
FS12KMA-5A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Test conditions ID = 1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = 250V, VGS = 0V ID = 1mA, VDS = 10V ID = 6A, VGS = 10V ID = 6A, VGS = 10V ID = 6A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 250 -- -- 2.0 -- -- -- -- -- -- -- -- -- -- -- -- Ty p. -- -- -- 3.0 0.27 1.62 11.0 1200 120 30 20 35 190 50 1.5 -- Max. -- ±0.1 1 4.0 0.40 2.40 -- -- -- -- -- -- -- -- 2.0 3.57 Unit V µA mA V V S pF pF pF ns ns ns ns V °C/W
VDD = 150V, ID = 6A, VGS = 10V, RGEN = RGS = 50
IS = 6A, VGS = 0V Channel to case
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 50
POWER DISSIPATION PD (W) DRAIN CURRENT ID (A)
MAXIMUM SAFE OPERATING AREA
7 5 3 2
40
101
7 5 3 2
tw = 10µs 100µs 1ms
30
20
100
7 5 3 2
10
TC = 25°C Single Pulse
10ms
DC
0
101
0
50
100
150
200
7
2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS (TYPICAL) 20
PD = 35W
OUTPUT CHARACTERISTICS (TYPICAL) 10
TC = 25°C Pulse Test
DRAIN CURRENT ID (A)
16
DRAIN CURRENT ID (A)
VGS = 20V,10V,8V,6V 5V
8
PD = 35W VGS = 20V,10V,8V,6V,5V
12
6
4.5V
8
4
4
TC = 25°C Pulse Test
2
4V
0
0
2
4
6
8
10
0
0
1.0
2.0
3.0
4.0
5.0
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Sep. 2001
MITSUBISHI Nch POWER MOSFET
FS12KMA-5A
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 10
ID = 24A
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 0.5
TC = 25°C Pulse Test
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V)
8
TC = 25°C Pulse Test
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) ()
0.4
VGS = 10V, 20V
6
18A
0.3
4
12A
0.2
2
6A
0.1 0 101 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A)
0
0
4
8
12
16
20
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS (TYPICAL) 20
3 2
FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL)
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE yfs (S)
16
101
7 5 3 2 TC = 25°C,75°C,125°C
12
8
100
7 5 3 2 VDS = 10V Pulse Test 7 100 2 3 5 7 101 2 3 57
4
0
TC = 25°C VDS = 10V Pulse Test
0
4
8
12
16
20
101
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL)
5 3 2 5 3
SWITCHING CHARACTERISTICS (TYPICAL)
SWITCHING TIME (ns)
Ciss
2
CAPACITANCE Ciss, Coss, Crss (pF)
1 03 7 5 3 2 1 02 7 5 3 Tch = 25°C 2 VGS = 0V f = 1MHz 1 01 2 3 5 7 100 2 3 Coss
td(off) tf tr td(on) Tch = 25°C VGS = 10V VDD = 150V RGEN = RGS = 50 7 100 2 3 5 7 101 2 3 57
102
7 5 3 2
Crss
5 7 101 2 3
5 7 102 2
101 7 5
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A)
Sep. 2001
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