|
|
Part: FS2KMJ-3
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> Power MOSFETs
-> N-Channel
Description: N-channel Power MOSFET High-speed Switching Use: 150v, 2a
Company: Mitsubishi Electronics America, Inc.
Datasheet: Download FS2KMJ-3 datasheet File size : 170 kB
Request For quote: Find where to buy FS2KMJ-3
Datasheet text preview:
MITSUBISHI Nch POWER MOSFET
FS2KMJ-3
HIGH-SPEED SWITCHING USE
FS2KMJ-3
OUTLINE DRAWING
10 ± 0.3
6.5 ± 0.3 3 ± 0.3
Dimensions in mm
2.8 ± 0.2
15 ± 0.3
f 3.2 ± 0.2
14 ± 0.5
3.6 ± 0.3
1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15
E
0.75 ± 0.15
2.54 ± 0.25
2.54 ± 0.25
4.5 ± 0.2
123
2.6 ± 0.2
¡4V DRIVE ¡VDSS ........ 150V ¡rDS (ON) (MAX) ..... 0.75 ¡ID ........... 2A ¡Integrated Fast Recovery Diode (TYP.) .... 65ns ¡Viso ........ 2000V
w
q
q GATE w DRAIN e SOURCE
e
TO-220FN
APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IDA IS ISM PD T ch T stg Viso --
(Tc = 25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight L = 100µH VGS = 0V VDS = 0V
Conditions
Ratings 150 ±20 2 8 2 2 8 15 55 ~ +150
Unit V V A A A A A W °C °C V g
Feb.1999
AC for 1minute, Terminal to case Typical value
55 ~ +150 2000 2.0
MITSUBISHI Nch POWER MOSFET
FS2KMJ-3
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) y fs Ciss C oss C rss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage
(Tch = 25°C)
Test conditions ID = 1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = 150V, VGS = 0V ID = 1mA, VDS = 10V ID = 1A, VGS = 10V ID = 1A, VGS = 4V ID = 1A, VGS = 10V ID = 1A, VDS = 5V VDS = 10V, VGS = 0V, f = 1MHz
Limits Min. 150 -- -- 1.0 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- 1.5 0.58 0.61 0.58 4.5 360 62 16 11 9 35 13 1.0 -- 65 Max. -- ±0.1 0.1 2.0 0.75 0.81 0.75 -- -- -- -- -- -- -- -- 1.5 8.33 --
Unit V µA mA V V S pF pF pF ns ns ns ns V °C/W ns
Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time
VDD = 80V, ID = 1A, VGS = 10V, RGEN = RGS = 50
IS = 1A, VGS = 0V Channel to case IS = 2A, dis/dt = 100A/µs
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 20
POWER DISSIPATION PD (W) DRAIN CURRENT ID (A)
MAXIMUM SAFE OPERATING AREA 2 101 7 5 3 2 100 7 5 3 2 101 7 5 3 2
TC = 25°C Single Pulse
16
tw = 10ms 100ms 1ms 10ms DC
12
8
4
0
0
50
100
150
200
2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL)
CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) 5.0
Tc = 25°C Pulse Test
2.0
Tc = 25°C Pulse Test VGS = 10V 6V 4V 3V 2.5V
DRAIN CURRENT ID (A)
4.0
VGS = 10V 6V 4V 3V PD = 15W
DRAIN CURRENT ID (A)
1.6
3.0
1.2
2.0
2.5V
0.8
1.0
0.4
0
0
1.0
2.0
3.0
4.0
5.0
0
0
0.4
0.8
1.2
1.6
2.0
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS2KMJ-3
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 5.0
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V)
Tc = 25°C Pulse Test
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 1.0
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) ()
Tc = 25°C Pulse Test VGS = 4V 10V
4.0
0.8
3.0
ID = 3A 2A
0.6
2.0
0.4
1.0
1A
0.2 0 102 2 3 5 7101 2 3 5 7 100 2 3 5 7 101 DRAIN CURRENT ID (A)
0
0
2
4
6
8
10
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS (TYPICAL) 10
Tc = 25°C VDS = 10V Pulse Test
FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 101 VDS = 5V 7 Pulse Test 5 4 3 2 100 7 5 4 3 2
TC = 25°C 75°C 125°C
DRAIN CURRENT ID (A)
6
4
2
FORWARD TRANSFER ADMITTANCE yfs (S)
8
0
0
2
4
6
8
10
101 1 10
2 3 4 5 7 100
2 3 4 5 7 101
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2 103
CAPACITANCE Ciss, Coss, Crss (pF)
Tch = 25°C VGS = 0V 7 f = 1MHZ
SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 1 10
tf td(off) td(on) tr Tch = 25°C VDD = 80V VGS = 10V RGEN = RGS = 50
102 7 5 3 2 101 7 5 3 2
Coss
Crss
3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V)
SWITCHING TIME (ns)
5 3 2
Ciss
2 3 4 5 7 100
2 3 4 5 7 101
DRAIN CURRENT ID (A)
Feb.1999
Others parts begin by fs
FS-1 FS-2 FS-3 FS-4 FS-5 FS-6 FS-7 FS-8 FS-9 FS-10 FS-11 FS-12 FS-13
|
|
|
