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Details, datasheet, quote on part number:FS2UM-12
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| Part: | FS2UM-12 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs => N-Channel |
| Description: | N-channel Power MOSFET High-speed Switching Use: 600v, 2a |
| Company: | Mitsubishi Electronics America, Inc. |
| Datasheet: | Download FS2UM-12 datasheet File size : 44 kB |
| Request For quote: | Find where to buy FS2UM-12
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Datasheet text preview:
MITSUBISHI Nch POWER MOSFET
FS2UM-12
HIGH-SPEED SWITCHING USE
FS2UM-12
OUTLINE DRAWING
10.5MAX. r
3.2 7.0
Dimensions in mm
4.5 1.3
16
3.6
3.8MAX.
1.0
12.5MIN.
0.8
2.54
2.54
4.5MAX.
0.5
2.6
qwe
wr q GATE w DRAIN e SOURCE r DRAIN e
q
¡VDSS ........ 600V ¡rDS (ON) (MAX) ....... 6.4 ¡ID ........... 2A
TO-220
APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM PD Tch Tstg --
(Tc = 25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V
Conditions
Ratings 600 ±3 0 2 6 60 55 ~ +150 55 ~ +150 2.0
Unit V V A A W °C °C g
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS2UM-12
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf V SD Rth (ch-c) Parameter
(Tch = 25°C)
Test conditions ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 600V, VGS = 0V ID = 1mA, VDS = 10V ID = 1A, VGS = 10V ID = 1A, VGS = 10V ID = 1A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz
Limits Min. 600 ±3 0 -- -- 2 -- -- 0.8 -- -- -- -- -- -- -- -- -- Typ. -- -- -- -- 3 5.0 5.0 1.3 300 30 5 13 10 30 30 1.5 -- Max. -- -- ±1 0 1 4 6.4 6.4 -- -- -- -- -- -- -- -- 2.0 2.08
Unit V V µA mA V V S pF pF pF ns ns ns ns V °C/W
Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance
VDD = 200V, ID = 1A, VGS = 10V, RGEN = RGS = 50
IS = 1A, VGS = 0V Channel to case
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 100
POWER DISSIPATION PD (W)
MAXIMUM SAFE OPERATING AREA 101 7 5 3 2 100 7 5 3 2 101 7 5 3 2 102 tw=10µs 100µs 1ms 10ms DC TC = 25°C Single Pulse 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) VGS=20V 10V TC = 25°C 6V 8V Pulse Test
80
60
40
20
0
0
50
100
150
200
CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) 5 PD = 60W TC = 25°C Pulse Test VGS = 20V 10V 8V 6V 2 2.0
DRAIN CURRENT ID (A)
4
DRAIN CURRENT ID (A)
DRAIN CURRENT ID (A)
1.6
3
1.2
0.8 5V 0.4
1
5V
0
0
10
20
30
40
50
0
0
4
8
12
16
20
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS2UM-12
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 40
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) ()
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 10 TC=25°C Pulse Test 8 VGS=10V 20V
TC=25°C Pulse Test 32 ID=3A 24
6
16
2A
4
8
1A
2 0 102 2 3 5 7 101 2 3 5 7 100 2 3 5 7 101 DRAIN CURRENT ID (A)
0
0
4
8
12
16
20
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS (TYPICAL) 10 TC = 25°C VDS = 50V Pulse Test 101 7 5
FORWARD TRANSFER ADMITTANCE yfs (S)
FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) VDS = 10V Pulse Test
DRAIN CURRENT ID (A)
8
6
3 2 TC = 25°C 100 7 5 3 2 101 1 10 23 5 7 100 23 5 7 101
4
125°C
75°C
2
0
0
4
8
12
16
20
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 7 5 3 2 102 7 5 3 2 Coss 5 Ciss
SWITCHING TIME (ns)
SWITCHING CHARACTERISTICS (TYPICAL) Tch = 25°C VDD = 200V VGS = 10V RGEN = RGS = 50
3 2 tf 102 7 5 3 2 101 7 5 101
CAPACITANCE Ciss, Coss, Crss (pF)
td(off)
101 7 5 Tch=25°C Crss f=1MHz 3 VGS=0V 2 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 DRAIN-SOURCE VOLTAGE VDS (V)
td(on) tr
23
5 7 100
23
5 7 101
DRAIN CURRENT ID (A)
Feb.1999
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