|
Details, datasheet, quote on part number:FS50UM-2
| |
| Part: | FS50UM-2 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs => N-Channel |
| Description: | N-channel Power MOSFET High-speed Switching Use: 100v, 50a |
| Company: | Mitsubishi Electronics America, Inc. |
| Datasheet: | Download FS50UM-2 datasheet File size : 41 kB |
| Request For quote: | Find where to buy FS50UM-2
|
| |
Datasheet text preview:
MITSUBISHI Nch POWER MOSFET
FS50UM-2
HIGH-SPEED SWITCHING USE
FS50UM-2
OUTLINE DRAWING
10.5MAX. r
Dimensions in mm
4.5 1.3
3.2
16
12.5MIN.
3.8MAX.
1.0
7.0
f 3.6
0.8
D
0.5 2.6
2.54
2.54
qwe
wr q GATE w DRAIN e SOURCE r DRAIN e
¡10V DRIVE ¡VDSS ....... 100V ¡rDS (ON) (MAX) .... 55m ¡ID ....... 50A ¡Integrated Fast Recovery Diode (TYP.) .......... 105ns
q
TO-220
APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IDA IS ISM PD T ch T stg --
(Tc = 25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V
Conditions
Ratings 100 ±20 50 200 50 50 200 70 55 ~ +150 55 ~ +150 2.0
4.5MAX.
Unit V V A A A A A W °C °C g
Feb.1999
L = 50µH
MITSUBISHI Nch POWER MOSFET
FS50UM-2
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) y fs Ciss C oss C rss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage
(Tch = 25°C)
Test conditions ID = 1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = 100V, VGS = 0V ID = 1mA, VDS = 10V ID = 25A, VGS = 10V ID = 25A, VGS = 10V ID = 25A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz
Limits Min. 100 -- -- 2.0 -- -- -- -- -- -- -- Typ. -- -- -- 3.0 39 0.98 33 2300 410 185 35 86 100 80 1.0 -- 105 Max. -- ±0.1 0.1 4.0 55 1.38 -- -- -- -- -- -- -- -- 1.5 1.78 --
Unit V µA mA V m V S pF pF pF ns ns ns ns V °C/W ns
Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time
VDD = 50V, ID = 25A, VGS = 10V, RGEN = RGS = 50
-- -- -- -- -- --
IS = 25A, VGS = 0V Channel to case IS = 50A, dis/dt = 100A/µs
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 100
POWER DISSIPATION PD (W) DRAIN CURRENT ID (A)
MAXIMUM SAFE OPERATING AREA 3 2 102 7 5 3 2 101 7 5 3 2
tw = 10ms
80
60
100ms
40
1ms 10ms
20
0
0
50
100
150
200
100 100ms 7 TC = 25°C DC 5 Single Pulse 3 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 50
VGS = 20V 10V 7V 6V TC = 25°C Pulse Test
CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) 100
VGS = 20V 10V 7V
DRAIN CURRENT ID (A)
80
DRAIN CURRENT ID (A)
40
60
6V
30
40
TC = 25°C Pulse Test 5V PD = 70W
20
5V PD = 70W
20
10
0
0
2
4
6
8
10
0
0
1
2
3
4
5
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS50UM-2
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 5
TC = 25°C Pulse Test
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 100
TC = 25°C Pulse Test
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (m)
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V)
4
80
3
ID = 80A
60
VGS = 10V
2
50A
40
20V
1
20A
20 0
0
0
4
8
12
16
20
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN CURRENT ID (A)
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS (TYPICAL) 100
TC = 25°C VDS = 10V Pulse Test
FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102 VDS = 10V 7 Pulse Test 5 4 3 2 101 7 5 4 3 2
DRAIN CURRENT ID (A)
60
40
FORWARD TRANSFER ADMITTANCE yfs (S)
80
20
TC = 25°C 75°C 125°C
0
0
4
8
12
16
20
100 0 10
2 3 4 5 7 101
2 3 4 5 7 102
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2
Tch = 25°C
SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 4 3 2
td(off) Tch = 25°C VDD = 50V VGS = 10V RGEN = RGS = 50
104 VGS = 0V
Ciss
103 7 5 3 2 102 7 5 3 2
SWITCHING TIME (ns)
CAPACITANCE Ciss, Coss, Crss (pF)
7 f = 1MHZ 5 3 2
Coss Crss
102 7 5 4 3 2
tf tr td(on)
3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V)
101 0 10
2 3 4 5 7 101
2 3 4 5 7 102
DRAIN CURRENT ID (A)
Feb.1999
|
|
