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Details, datasheet, quote on part number:FS50UMJ-06
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| Part: | FS50UMJ-06 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs => N-Channel |
| Description: | N-channel Power MOSFET High-speed Switching Use: 60v, 50a |
| Company: | Mitsubishi Electronics America, Inc. |
| Datasheet: | Download FS50UMJ-06 datasheet File size : 43 kB |
| Request For quote: | Find where to buy FS50UMJ-06
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Datasheet text preview:
MITSUBISHI Nch POWER MOSFET
FS50UMJ-06
HIGH-SPEED SWITCHING USE
FS50UMJ-06
OUTLINE DRAWING
10.5MAX. r
Dimensions in mm
4.5 1.3
3.2
16
12.5MIN.
3.8MAX.
1.0
7.0
f 3.6
0.8
D
0.5 2.6
2.54
2.54
qwe
wr q GATE w DRAIN e SOURCE r DRAIN e
¡4V DRIVE ¡VDSS ......... 60V ¡rDS (ON) (MAX) .... 20m ¡ID ....... 50A ¡Integrated Fast Recovery Diode (TYP.) ... 70ns
q
TO-220
APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg --
(Tc = 25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V
Conditions
Ratings 60 ± 20 50 200 50 50 200 70 55 ~ +150 55 ~ +150 2.0
4.5MAX.
Unit V V A A A A A W °C °C g
Feb.1999
L = 100µH
MITSUBISHI Nch POWER MOSFET
FS50UMJ-06
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) y fs Ciss C oss C rss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage
(Tch = 25°C)
Test conditions ID = 1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = 60V, VGS = 0V ID = 1mA, VDS = 10V ID = 25A, VGS = 10V ID = 25A, VGS = 4V ID = 25A, VGS = 10V ID = 25A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz
Limits Min. 60 -- -- 1.0 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- 1.5 15 18 0.38 41 3000 580 300 22 65 250 160 1.0 -- 70 Max. -- ±0.1 0.1 2.0 20 24 0.50 -- -- -- -- -- -- -- -- 1.5 1.79 --
Unit V µA mA V m m V S pF pF pF ns ns ns ns V °C/W ns
Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time
VDD = 30V, ID = 25A, VGS = 10V, RGEN = RGS = 50
IS = 25A, VGS = 0V Channel to case IS = 50A, dis/dt = 100A/µs
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 100 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 3 2 102 7 5 3 2 101 7 5 3 2
1ms 10ms 100ms TC = 25°C Single Pulse DC tw = 10ms
80
60
100ms
40
20
0
0
50
100
150
200
100 7 5 3
3
5 7100
23
5 7 101
2 3 5 7 102 2 3
CASE TEMPERATURE TC (°C) OUTPUT CHARACTERISTICS (TYPICAL) 100
VGS = 10V 5V TC = 25°C Pulse Test
DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 50
VGS = 10V 5V 4V 3.5V
DRAIN CURRENT ID (A)
80
4V
DRAIN CURRENT ID (A)
40
PD = 70W
60
30
TC = 25°C Pulse Test 3V
40
3V
20
20
PD = 70W
10
2.5V
0
0
1
2
3
4
5
0
0
0.4
0.8
1.2
1.6
2.0
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS50UMJ-06
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 2.0
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V)
TC = 25°C Pulse Test
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 50
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (m)
TC = 25°C Pulse Test
1.6
40
VGS = 4V
1.2
ID = 80A
30
0.8
50A
20
10V
0.4
20A
10 0
0
0
2
4
6
8
10
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN CURRENT ID (A)
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS (TYPICAL) 100
TC = 25°C VDS = 10V Pulse Test
FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102 VDS = 10V 7 Pulse Test 5
FORWARD TRANSFER ADMITTANCE yfs (S)
TC = 25°C
DRAIN CURRENT ID (A)
80
3 2 101 7 5 3 2
75°C 125°C
60
40
20
0
0
2
4
6
8
10
100 0 10
23
5 7 101
2
3
5 7 102
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2 103
SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF)
SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5
Tch = 25°C VDD = 30V VGS = 10V RGEN = RGS = 50
7 5 3 2
Ciss
3 2
td(off)
103 7 5 3 2 102 7 5 3 2
tf
Coss Crss
102 7 5 3 2 101 0 10
tr td(on)
Tch = 25°C f = 1MHZ VGS = 0V
3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V)
23
5 7 101
23
5 7 102
DRAIN CURRENT ID (A)
Feb.1999
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