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Details, datasheet, quote on part number:FX70KMJ-03
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| Part: | FX70KMJ-03 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs => P-Channel |
| Description: | P-channel Power MOSFET High-speed Switching Use: -30v, -70a |
| Company: | Mitsubishi Electronics America, Inc. |
| Datasheet: | Download FX70KMJ-03 datasheet File size : 52 kB |
| Request For quote: | Find where to buy FX70KMJ-03
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Datasheet text preview:
P
ion. hange. icat ecif ect to c l sp j fina re sub a not ts a is is ric limi t : Th tice arame No e p Som
IM REL
Y NAR I
MITSUBISHI Pch POWER MOSFET
FX70KMJ-03
HIGH-SPEED SWITCHING USE
FX70KMJ-03
OUTLINE DRAWING
10 ± 0.3
Dimensions in mm
2.8 ± 0.2
15 ± 0.3
3.2 ± 0.2
14 ± 0.5
3.6 ± 0.3
1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15
6.5 ± 0.3
3 ± 0.3
E
0.75 ± 0.15
2.54 ± 0.25
2.54 ± 0.25
1
23
3
· 4V DRIVE · VDSS ...... 30V · rDS (ON) (MAX) ............ 12.3m · ID ........... 70A · Integrated Fast Recovery Diode (TYP.) .. 70ns · Viso ........ 2000V
APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc.
2.6 ± 0.2
1
1 GATE 2 DRAIN 3 SOURCE
2
TO-220FN
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg Viso --
(Tc = 25°C)
Parameter Drain-source voltage Gate-source voltage Drain current VGS = 0V VDS = 0V
Conditions
Ratings 30 ±20 70 280 70 70 280 35 55 ~ +150 55 ~ +150 2000 2.0
4.5 ± 0.2
Unit V V A A A A A W °C °C V g Jan.1999
Drain current (Pulsed) Avalanche drain current (Pulsed) L = 10µH Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight
AC for 1minute, Terminal to case Typical value
P
ion. hange. icat ecif ect to c l sp j fina re sub a not ts a is is ric limi t : Th tice arame No e p Som
IM REL
Y NAR I
MITSUBISHI Pch POWER MOSFET
FX70KMJ-03
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf V SD Rth (ch-c) trr Parameter
(Tch = 25°C)
Test conditions ID = 1mA, VDS = 0V VGS = ±20V, VDS = 0V VDS = 30V, VGS = 0V ID = 1mA, VDS = 10V ID = 35A, VGS = 10V ID = 26A, VGS = 4V ID = 35A, VGS = 10V ID = 35A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz
Limits Min. 30 -- -- 1.3 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- 1.8 10.0 19 0.35 55.8 11140 2300 1000 85 228 751 360 1.0 -- 70 Max. -- ±0.1 0.1 2.3 12.3 25 0.43 -- -- -- -- -- -- -- -- 1.5 3.57 --
Unit V µA mA V m m V S pF pF pF ns ns ns ns V °C/W ns
Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time
VDD = 15V, ID = 35A, VGS = 10V, RGEN = RGS = 50
IS = 35A, VGS = 0V Channel to case IS = 35A, dis/dt = 50A/µs
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 50 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 103
7 5 3 2
40
102
7 5 3 2
tw = 100µs 1ms 10ms 100ms TC = 25°C Single Pulse
30
20
101
7 5 3 2
10
0
0
50
100
150
200
100
DC 2 3 5 7100 2 3 5 7101 2 3 5 7102 2
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS (TYPICAL) 100
VGS = 10V 8V 6V
OUTPUT CHARACTERISTICS (TYPICAL) 50
VGS = 10V 8V PD = 35W 4V 6V 5V
DRAIN CURRENT ID (A)
80
PD = 35W 5V
DRAIN CURRENT ID (A)
40
60
4V
30
40
Tc = 25°C Pulse Test
20
3V
20
10
Tc = 25°C Pulse Test
3V
0
0
0.4
0.8
1.2
1.6
2.0
0
0
0.2
0.4
0.6
0.8
1.0
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V) Jan.1999
P
ion. hange. icat ecif ect to c l sp j fina re sub a not ts a is is ric limi t : Th tice arame No e p Som
IM REL
Y NAR I
MITSUBISHI Pch POWER MOSFET
FX70KMJ-03
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 40
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (m)
Tc = 25°C Pulse Test
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 2.0
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V)
Tc = 25°C Pulse Test
1.6
ID = 100A
32
1.2
24
VGS = 4V
0.8
70A
16
10V
0.4
35A
8 0 100 2 3 5 7101 2 3 57 102 2 3 5 7103 DRAIN CURRENT ID (A)
0
0
2
4
6
8
10
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS (TYPICAL) 100
DRAIN CURRENT ID (A)
Tc = 25°C VDS = 10V Pulse Test
FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102
VDS = 10V 7 Pulse Test 5 4 3 2 TC = 125°C 75°C 25°C
60
FORWARD TRANSFER ADMITTANCE yfs (S)
80
101
7 5 4 3 2
40
20
0
0
2
4
6
8
10
100 0 10
2 3
5 7 101
2 3 5 7 102
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL)
2 Tch = 25°C
SWITCHING CHARACTERISTICS (TYPICAL) 103
7 5 4 3 2 tf td(off)
105 f = 1MHZ
3 2
SWITCHING TIME (ns)
CAPACITANCE Ciss, Coss, Crss (pF)
7 VGS = 0V 5
104
7 5 3 2
Ciss
tr td(on)
102
7 5 4 3 2
Coss Crss
103
7 5 3 2 3 5 7 100
2 3 5 7 101
2 3
101
Tch = 25°C VGS = 10V VDD = 15V RGEN = RGS = 50
5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 5
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A) Jan.1999
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