Details, datasheet, quote on part number: PS11034
DescriptionMitsubishi Semiconductor <application Specific Intelligent Power Module>flat Base Type Insulated Type
CompanyMitsubishi Electronics America, Inc.
DatasheetDownload PS11034 datasheet
Find where to buy


Features, Applications
MITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module>

Converter bridge for 3 phase AC-to-DC power conversion. 3 phase IGBT inverter bridge configured by the latest 3rd. generation IGBT and diode technology. Inverter output current capability I O (Note 1): Type Name Motor Rating AC 5.0Arms (Note 1) : The inverter output current is assumed to be sinusoidal and the peak current value of each of the 2, above loading cases is defined as : IOP < 100C


P-Side IGBTs : Drive circuit, high-level-shift circuit, bootstrap circuit supply scheme for Single Control-Power-Source drive, and under voltage (UV) protection. N-Side IGBTs : Drive circuit, DC-Link current sense and amplifier circuits for overcurrent protection, control-supply under-voltage protection (UV), and fault output (FO) signaling circuit. Fault Output : N-side IGBT short circuit (SC), over-current (OC), and control supply under-voltage (UV). Inverter Analog Current Sense : N-Side IGBT DC-Link Current Sense. Input Interface : 5V CMOS/TTL compatible, Schmitt Trigger input, and Arm-Shoot-Through interlock protective function.

APPLICATION Acoustic noise-less 0.75kW/200V AC Class 3 phase inverters, motor control applications, and motors with built-in small size inverter package

16.50.5 Terminals Assignment : 1. CBU+ 2. CBU 3. CBV+ 4. CBV 5. CBW+ 6. CBW FO 15. Vamp 16. GND 30. N2

Symbol VCC Item Supply voltage Condition Applied between P2-N2 Ratings Unit

VCC(surge) Supply voltage (surge) Applied between P2-N2, Surge-value or VN Each output IGBT collector-emitter static voltage Applied between P2-U.V.W, U.V.W-N2 VP(S) or VN(S) Ic(Icp) Each output IGBT collector-emitter switching voltage Each output IGBT collector current Applied between = 25C, means IC peak value

Symbol VRRM Ea IO IFSM I2t Item Repetitive peak reverse voltage Recommended AC input voltage DC output current Surge (non-repetitive) forward current I2t for fusing 3 rectifying circuit 1 cycle at 60Hz, peak value non-repetitive Value for one cycle of surge current Condition Ratings Unit V Vrms A 2s

Symbol VD, VDB VCIN VFO IFO Iamp Supply voltage Input signal voltage Fault output supply voltage Fault output current DC-Link IGBT current signal Amp output current Item Ratings Unit V mA

Symbol Tj Tstg TC VISO Item Junction temperature Storage temperature Module case operating temperature Isolation voltage Mounting torque Condition (Note 2) (Fig. 60 Hz sinusoidal AC applied between all terminals and the base plate for 1 minute. Mounting screw: M4 Ratings Unit C Vrms Nm

(Note 2) : The indicated values are specified considering the safe operation of all the parts within the ASIPM. The max. ratings for the ASIPM power chips (IGBT & FWDi) < 150.

Symbol Rth(jc) Q Rth(jc) F Rth(jc) FR Rth(cf) Junction to case Thermal Resistance Contact Thermal Resistance Item Inverter IGBT (1/6) Inverter FWDi (1/6) Converter Di (1/6) Case to fin thermal, grease applied (1 Module) Condition Ratings Min. Typ. Max. Unit C/W

Symbol VCE(sat) VEC VFR IRRM ton tc(on) toff tc(off) trr FWDi reverse recovery time Item Collector-emitter saturation voltage FWDi forward voltage Condition = 25C, Input = ON, VD = VDB = 15V (Shunt voltage drop not included) = 25C, IC = 15A Ratings Min. 0.3 Typ. Max. Unit mA s

= 25C, IFR = 10A Converter diode voltage Converter diode reverse current VR = VRRM 125C 1/2 Bridge inductive, Input 5V 0V VCC = 15V, VDB = 15V Note: ton, toff include delay time of the internal control circuit.

Short circuit endurance @VCC 400V, Input 5V 0V (One-Shot) (Output, Arm, and Load Short Circuit Modes) 20C Tj (start) VD = VDB 16.5V Switching SOA @VCC 400V, Input < OC trip level, VD = VDB 16.5V

No destruction FO output by protection operation No destruction No protecting operation No FO output


Some Part number from the same manufacture Mitsubishi Electronics America, Inc.
PS11035 Mitsubishi Semiconductor flat Base Type Insulated Type
PS21204 15A Power Module For Transfer-mold Type Insulated Type
PS21205 20A Power Module For Transfer-mold Type Insulated Type
PS21212 5A Power Module For Transfer-mold Type Insulated Type
PS21312 Power Module For Transfer-mold Type Insulated Type
QM1000HA-24B 1000A - Transistor Module For Medium Power Switching Use, Insulated Type

M37221M6-079SP : Single-chip 8-bit CMOS Microcomputer For Voltage Synthesizer

M38020M5-XXXSS : RAM Size: 192bytes; Single-chip 8-bit CMOS Microcomputer

M38033ME-XXXFP : RAM Size: 512bytes Single Chip 8-bit CMOS Microcomputer

M38224EC-GP : RAM Size: 640 Bytes; Single-chip 8-bit CMOS Microcomputer

M38250MA-XXXFP : RAM Size: 192 Bytes; Single-chip 8-bit CMOS Microcomputer

M38277MD-XXXFP : Single-chip 8-bit CMOS Microcomputer

M38C36M4MXXXFS : Single-chip 8-bit CMOS Microcomputer

M38C82ED-XXXFP : Single-chip 8-bit CMOS Microcomputer

DSS-301LC12F : DIA Surge Suppressor (dss)

Same catergory

2N2323A-2N2328A : SCRS 1.6 Amp, Planar.

2N7002 : Dmos Transistor (N-Channel). Case: SOT-23 Plastic Package Weight: approx. 0.008g Marking Code: S72 Advanced Trench Process Technology High density cell design for ultra-low on-resistance High input impedance High-speed switching No minority carrier storage time CMOS logic compatible input No secondary breakdown Parameter Drain-Source Voltage Gate-Source-Voltage Continuous Drain.

BC856ALT1 : General Purpose Transistor , Package: SOT-23 (TO-236), Pins=3. Rating Collector-Emitter Voltage BC858, BC859 Symbol VCEO Value Unit V Characteristic Total Device Dissipation FR- 5 Board, (Note = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (Note = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol 225 1.8 RqJA.

CM600HA-28H : 600 Amp Igbt Module For High Power Switching Use Insulated Type. : Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. : Low Drive Power.

IXGH32N60BD1 : IGBT with FAST Diodes. Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Test Conditions to 150C; RGE 1 M Continuous Transient 1 ms VGE= 15 V, TVJ = 22 Clamped inductive load = 25C Maximum lead temperature for soldering mm (0.062 in.) from case for 10 s Weight TO-247AD TO-268 High current handling capability HiPerFASTTM HDMOSTM process MOS Gate turn-on.

MBT35200MT1 : High Current Surface Mount PNP Silicon Switching Transistor For Load Management in Portable Applications , Package: Tsop, Pins=6.

PTF10149 : 70 Watts, 921-960 MHZ Goldmos Field Effect Transistor. The PTF is an internally matched 70watt GOLDMOS FET intended for cellular and GSM amplifier applications from to 960 MHz. It operates with 50% efficiency and 16 dB typical gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. INTERNALLY MATCHED Performance at 960 MHz, 26 Volts - Output Power.

STD20NF06L : Low Voltage. N-channel 60V - 0.032 Ohm - 24A Dpak StripFET ii Power MOSFET.

IR1166SPBF : 200V Secondary Side High Speed SR Controller in a 8-Lead SOIC Package. Used to drive N-Channel power MOSFETs used as Synchronous Rectifiers in isolated Flyback.

AZFW : RESISTOR, WIRE WOUND, 15 W, 1; 2; 5; 10 %, 350; 400 ppm, 1 ohm - 1000 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Technology / Construction: Wirewound ; Mounting / Packaging: ThroughHole, Radial Leads, RADIAL LEADED.

LQG18HH10NJ00B : 1 ELEMENT, 0.01 uH, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Lead Style: WRAPAROUND ; Standards and Certifications: RoHS ; Application: General Purpose, RF Choke ; Inductance Range: 0.0100 microH ; Rated DC Current: 400 milliamps ; Operating Temperature: -55 to 125 C (-67 to 257 F).

LSU309 : UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-18. s: Polarity: N-Channel ; Package Type: HERMETIC SEALED PACAKGE-3 ; Number of units in IC: 1.

T405-400B-TR : 400 V, 4 A, 4 QUADRANT LOGIC LEVEL TRIAC. s: Thyristor Type: Triac, 4 QUADRANT LOGIC LEVEL TRIAC ; Pin Count: 2 ; VDRM: 400 volts ; IT(RMS): 4 amps.

83R3LFM0812HTN08EM : CAP,AL2O3,3.3UF,50VDC,20% -TOL,20% +TOL. s: Applications: General Purpose ; Electrolytic Capacitors: Aluminum Electrolytic.

0-C     D-L     M-R     S-Z