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Details, datasheet, quote on part number:QM1000HA-24B
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| Part: | QM1000HA-24B |
| Category: | Discrete => Transistors => Bipolar => Modules |
| Description: | 1000A - Transistor Module For Medium Power Switching Use, Insulated Type |
| Company: | Mitsubishi Electronics America, Inc. |
| Datasheet: | Download QM1000HA-24B datasheet File size : 65 kB |
| Request For quote: | Find where to buy QM1000HA-24B
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Datasheet text preview:
MITSUBISHI TRANSISTOR MODULES
QM1000HA-24B
HIGH POWER SWITCHING USE
INSULATED TYPE
QM1000HA-24B
· · · · ·
IC Collector current .... 1000A VCEX Collector-emitter voltage ......... 1200V hFE DC current gain..... 750 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271
APPLICATION AC motor controllers, UPS, CVCF, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
145 19 9 28 27 37 28 86.5 42 BX 25 39
E BX
C
E 74 B
47
E
163
51
73
B C
74
9 65
27 65
8
E
3M4 47MAX.
16 3 16 3 34 3 34
2M8 50MAX.
44.5
LABEL
45
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM1000HA-24B
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol VCEX (SUS) V CEX V CBO V EBO IC I C PC IB I CSM Tj Tstg V iso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage
(Tj=25°C, unless otherwise noted)
Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings 1200 1200 1200 7 1000 1000 7000 50 10000 40~+150 40~+125 Charged part to case, AC for 1 minute Main terminal screw M8 2500 8.83~10.8 90~110 1.96~2.94 20~30 0.98~1.47 10~15 0.98~1.47 10~15 2100 Unit V V V V A A W A A °C °C V N·m kg·cm N·m kg·cm N·m kg·cm N·m kg·cm g
Mounting screw M6 -- Mounting torque B(E) terminal screw M4
BX terminal screw M4 -- Weight Typical value
ELECTRICAL CHARACTERISTICS
Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) VC E O hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain
(Tj=25°C, unless otherwise noted)
Limits Test conditions VCE=1200V, VEB=2V VCB=1200V, Emitter open VEB=7V, Collector open IC=1000A, IB=1.33A IC=1000A (diode forward voltage) IC=1000A, VCE=4.0V Min. -- -- -- -- -- -- 750 -- VCC=600V, IC=1000A, IB1=2A, IB2=20A -- -- Transistor part Diode part Conductive grease applied -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 8.0 8.0 400 4.0 4.2 1.8 -- 2.5 20 7.0 0.018 0.07 0.01 Unit mA mA mA V V V -- µs µs µs °C / W °C / W °C / W
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM1000HA-24B
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL)
1000 IB=1.33A 10 4 7 5 4 3 2 10 3 7 5 4 3 2 10 2 10 1
DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL)
COLLECTOR CURRENT IC (A)
800
IB=4A
IB=250mA
600
400
DC CURRENT GAIN hFE
Tj=25°C
IB=0.5A
200
VCE=4.0V Tj=25°C Tj=125°C 2 3 4 5 7 10 2 2 3 4 5 7 10 3
0
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE
VCE (V)
COLLECTOR CURRENT IC (A)
SATURATION VOLTAGE VCE (sat), VBE (sat) (V)
COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL)
10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 1 2.2 2.6 3.0 3.4 3.8 4.2 VCE=4V Tj=25°C
SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
10 1 7 5 4 3 2
BASE CURRENT IB (A)
VBE(sat)
10 0 VCE(sat) 7 5 4 3 IB=1.33A Tj=25°C 2 Tj=125°C 10 1 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3
BASE-EMITTER VOLTAGE
VBE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
5
SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL)
2
ton, ts, tf (µs)
4
IC=1000A
3
SWITCHING TIME
10 1 7 5 4 3 2 10 0 7 5 4 3 2
ts tf
Tj=25°C Tj=125°C
ton
2 IC=600A 1 Tj=25°C Tj=125°C
IC=800A
0 10 2 2 3 5 7 10 1 2 3 5 7 10 0 2 3 5 7 10 1
VCC=600V IB1=2A IB2=20A 3 4 5 7 10 2 2 3 4 5 7 10 3 23
BASE CURRENT IB (A)
COLLECTOR CURRENT
IC (A)
Feb.1999
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