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Details, datasheet, quote on part number:QM100DY-2HBK
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| Part: | QM100DY-2HBK |
| Category: | Discrete => Transistors => Bipolar => Modules |
| Description: | 100A - Transistor Module For Medium Power Switching Use, Insulated Type |
| Company: | Mitsubishi Electronics America, Inc. |
| Datasheet: | Download QM100DY-2HBK datasheet File size : 105 kB |
| Request For quote: | Find where to buy QM100DY-2HBK
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Datasheet text preview:
MITSUBISHI TRANSISTOR MODULES
QM100DY-2HBK
HIGH POWER SWITCHING USE
INSULATED TYPE
QM100DY-2HBK
· · · · ·
IC Collector current ...... 100A VCEX Collector-emitter voltage ......... 1000V hFE DC current gain..... 750 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271
APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
108 46.5 93±0.25 B2X
E2 B2
C2E1
E2
B2 E2 6 48±0.25 15 62 C1 C2E1 E2
B2X
30
B1 E1
C1
10.5 6
B1X
9
14 8 15.3 3 25 25 21.5 3
8 1.8
B1X
E1 B1
3M6
17
8
17
8
17
Tab#110, t=0.5
16
LABEL
7
30
37
9.5
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM100DY-2HBK
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol VCEX (SUS) V CEX V CBO V EBO IC I C PC IB I CSM Tj Tstg V iso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage
(Tj=25°C, unless otherwise noted)
Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings 1200 1200 1200 7 100 100 800 5 1000 40~+150 40~+125 Charged part to case, AC for 1 minute Main terminal screw M6 2500 1.96~2.94 20~30 1.96~2.94 20~30 470 Unit V V V V A A W A A °C °C V N·m kg·cm N·m kg·cm g
--
Mounting torque Mounting screw M6
--
Weight
Typical value
ELECTRICAL CHARACTERISTICS
Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) VC E O hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain
(Tj=25°C, unless otherwise noted)
Limits Test conditions VCE=1000V, VEB=2V VCB=1000V, Emitter open VEB=7V IC=100A, IB=130mA IC=100A (diode forward voltage) IC=100A, VCE=4V Min. -- -- -- -- -- -- 750 -- VCC=600V, IC=100A, IB1=0.2A, IB2=2A -- -- Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (per 1/2 module) -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 4.0 4.0 100 4.0 4.0 1.8 -- 2.5 15 3.0 0.155 0.65 0.075 Unit mA mA mA V V V -- µs µs µs °C / W °C / W °C / W
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM100DY-2HBK
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL)
200 Tj=25°C 10 4 7 5 4 3 2 10 3 7 5 4 3 2 10 2 4 5 7 10 1 2 3 4 5 7 10 2 2 34
DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL)
Tj=25°C Tj=125°C VCE=10V
COLLECTOR CURRENT IC (A)
160
120
80
A 00m IB=4 A 00m IB=2 mA 130 IB= mA IB=40
IB=20mA
DC CURRENT GAIN hFE
VCE=4.0V
40
0
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE
VCE (V)
COLLECTOR CURRENT IC (A)
SATURATION VOLTAGE VCE (sat), VBE (sat) (V)
COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL)
3 2
SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 1 4 5 7 10 1 IB=130mA Tj=25°C Tj=125°C VBE(sat)
BASE CURRENT IB (A)
10 0 7 5 4 3 2 10 1 7 5 4 3 2.6
VCE(sat)
VCE=4.0V Tj=25°C 3.0 3.4 3.8 4.2 4.6
2 3 4 5 7 10 2
2 34
BASE-EMITTER VOLTAGE
VBE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
5 2
SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL)
ton, ts, tf (µs)
4
IC=130A
3 IC=100A IC=50A
2
SWITCHING TIME
10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 1
ts tf ton
1 Tj=25°C Tj=125°C 0 3 4 5 7 10 2 2 3 4 5 7 10 1 2 3 4 5 7 10 0 2 3
VCC=600V IB1=200mA IB2=2A Tj=25°C Tj=125°C 2 3 4 5 7 10 2 2 3 4 5 7 10 3
BASE CURRENT IB (A)
COLLECTOR CURRENT
IC (A)
Feb.1999
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