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Details, datasheet, quote on part number:QM100DY-2HK
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| Part: | QM100DY-2HK |
| Category: | Discrete => Transistors => Bipolar => Modules |
| Description: | 100A - Transistor Module For Medium Power Switching Use, Insulated Type |
| Company: | Mitsubishi Electronics America, Inc. |
| Datasheet: | Download QM100DY-2HK datasheet File size : 104 kB |
| Request For quote: | Find where to buy QM100DY-2HK
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Datasheet text preview:
MITSUBISHI TRANSISTOR MODULES
QM100DY-2HK
HIGH POWER SWITCHING USE
INSULATED TYPE
QM100DY-2HK
· · · · ·
IC Collector current ...... 100A VCEX Collector-emitter voltage ......... 1000V hFE DC current gain....... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271
APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
108 46.5 93±0.25
B2X B2 E2
B2X
48±0.25
C2E1
30
E2
E2 B2
6
15
62
C1 C2E1 E2
B1 E1
C1
10.5 6
B1X
9
B1X
E1 B1
14 8 15.3 3 17 25 8 17 25 8 17 21.5 3
8 1.8
3M6
Tab#110, t=0.5
16
LABEL
7
30
37
9.5
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM100DY-2HK
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol VCEX (SUS) V CEX V CBO V EBO IC I C PC IB I CSM Tj Tstg V iso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage
(Tj=25°C, unless otherwise noted)
Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings 1000 1000 1000 7 100 100 800 5 1000 40~+150 40~+125 Charged part to case, AC for 1 minute Main terminal screw M6 2500 1.96~2.94 20~30 1.96~2.94 20~30 470 Unit V V V V A A W A A °C °C V N·m kg·cm N·m kg·cm g
--
Mounting torque Mounting screw M6
--
Weight
Typical value
ELECTRICAL CHARACTERISTICS
Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) VC E O hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain
(Tj=25°C, unless otherwise noted)
Limits Test conditions VCE=1000V, VEB=2V VCB=1000V, Emitter open VEB=7V IC=100A, IB=2A IC=100A (diode forward voltage) IC=100A, VCE=2.8V/5V Min. -- -- -- -- -- -- 75/100 -- VCC=600V, IC=100A, IB1=IB2=2A -- -- Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (per 1/2 module) -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 2.0 2.0 400 2.5 3.5 1.8 -- 3.0 15 3.0 0.155 0.65 0.075 Unit mA mA mA V V V -- µs µs µs °C / W °C / W °C / W
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM100DY-2HK
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL)
200 Tj=25°C
COLLECTOR CURRENT IC (A) DC CURRENT GAIN hFE
160 IB=2.0A 120 IB=1.0A IB=0.6A 80 IB=0.4A IB=0.2A
10 4 7 5 3 2 10 3 7 5 3 2
VCE=5.0V
VCE=2.8V
40
0
0
1
2
3
4
5
VCE (V)
10 2 7 5 3 Tj=25°C 2 Tj=125°C 10 1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER VOLTAGE
SATURATION VOLTAGE VCE (sat), VBE (sat) (V)
COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL)
SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
BASE CURRENT IB (A)
10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 1 1.8 2.2 2.6 3.0
VCE=2.0V Tj=25°C
10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 1
VBE(sat)
VCE(sat)
IB=2A Tj=25°C Tj=125°C 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2
3.4
VBE (V)
3.8
BASE-EMITTER VOLTAGE
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL)
5 IC= 150A IC= 100A
ton, ts, tf (µs)
4
10 2 7 5 3 2 10 1 7 5 3 2
VCC=600V IB1=IB2=2A
ts
3
2 IC=50A 1 Tj=25°C Tj=125°C 0 10 2 2 3 4 5 710 1 2 3 4 5 7 10 0 2 3 4 5 7 10 1
BASE CURRENT IB (A)
SWITCHING TIME
IC=70A
tf 10 0 ton 7 5 3 Tj=25°C 2 Tj=125°C 10 1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3
COLLECTOR CURRENT IC (A)
Feb.1999
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