|
Details, datasheet, quote on part number:QM100HA-H
| |
Datasheet text preview:
MITSUBISHI TRANSISTOR MODULES
QM100HY-H
HIGH POWER SWITCHING USE
INSULATED TYPE
QM100HY-H
· · · · ·
IC Collector current ...... 100A VCEX Collector-emitter voltage .. 600V hFE DC current gain....... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271
APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
94 (7) 20
10.5 13 10.5
80 20 27
(7) C 6.5 E C
34
C
E
C
E1 B1
E1 B1 Tab#110, t=0.5
6.5
M5
31
(8)
22.5
LABEL
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM100HY-H
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol VCEX (SUS) V CEX V CBO V EBO IC I C PC IB I CSM Tj Tstg V iso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage
(Tj=25°C, unless otherwise noted)
Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 600 7 100 100 620 6 1000 40~+150 40~+125 Charged part to case, AC for 1 minute Main terminal screw M5 2500 1.47~1.96 15~20 1.96~2.94 20~30 250 Unit V V V V A A W A A °C °C V N·m kg·cm N·m kg·cm g
--
Mounting torque Mounting screw M6
--
Weight
Typical value
ELECTRICAL CHARACTERISTICS
Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) VC E O hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain
(Tj=25°C, unless otherwise noted)
Limits Test conditions VCE=600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=100A, IB=1.3A IC=100A (diode forward voltage) IC=100A, VCE=2V/5V Min. -- -- -- -- -- -- 75/100 -- VCC=300V, IC=100A, IB1=IB2=2A -- -- Transistor part Diode part Conductive grease applied -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 2.0 2.0 100 2.0 2.5 1.75 -- 2.0 12 3.0 0.2 0.65 0.075 Unit mA mA mA V V V -- µs µs µs °C / W °C / W °C / W
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM100HY-H
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL)
200 Tj=25°C 10 3 7 5 3 2 10 2 7 5 3 2 VCE=2.0V
DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL)
COLLECTOR CURRENT IC (A)
IB=2.0A IB=1.0A
160
120
IB=0.6A IB=0.4A IB=0.2A
80
DC CURRENT GAIN hFE
VCE=5.0V
40
0
0
1
2
3
4
5
10 1 7 5 3 Tj=25°C 2 Tj=125°C 0 10 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3
COLLECTOR-EMITTER VOLTAGE
VCE (V)
COLLECTOR CURRENT IC (A)
SATURATION VOLTAGE VCE (sat), VBE (sat) (V)
COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL)
10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 1 1.0 1.4 1.8 2.2 2.6 3.0
SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
10 1 7 5 4 3 2
BASE CURRENT IB (A)
VCE=2.0V Tj=25°C
VBE(sat)
10 0 7 5 VCE(sat) 4 3 IB=1.3A 2 Tj=25°C 10 1 Tj=125°C 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2
BASE-EMITTER VOLTAGE
VBE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
5 10 2 7 5 3 2 10 1 7 5 3 2
SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL)
VCC=300V IB1=IB2=2A Tj=25°C Tj=125°C
4
ton, ts, tf (µs)
IC=150A
ts
3 IC=100A 2 IC=50A 1 Tj=25°C Tj=125°C IC=70A
SWITCHING TIME
0 10 2 2 3 4 5 7 10 1 2 3 4 5 7 10 0 2 3 4 5 7 10 1
ton 10 0 tf 7 5 3 2 10 1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3
BASE CURRENT IB (A)
COLLECTOR CURRENT
IC (A)
Feb.1999
|
|
