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Details, datasheet, quote on part number:QM100HC-M
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| Part: | QM100HC-M |
| Category: | Discrete => Thyristors |
| Description: | 100A - Transistor Module For Medium Power Switching Use, Insulated Type |
| Company: | Mitsubishi Electronics America, Inc. |
| Datasheet: | Download QM100HC-M datasheet File size : 72 kB |
| Request For quote: | Find where to buy QM100HC-M
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Datasheet text preview:
MITSUBISHI TRANSISTOR MODULES
QM100HC-M
HIGH POWER SWITCHING USE
NON-INSULATED TYPE
QM100HC-M
· · · ·
IC Collector current ...... 100A VCEX Collector-emitter voltage .. 350V hFE DC current gain..... 100 Non-Insulated Type
APPLICATION Robotics, Forklifts, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
53.5 43.3 33 8 8 C
5.3
4.5 4.5
B
36.5
14
B E
5.3 10.5 M5
R6
E
23.5
4.5
LABEL
22
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM100HC-M
HIGH POWER SWITCHING USE
NON-INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol VCEX (SUS) V CEX V CBO V EBO IC I C PC IB I CSM Tj Tstg V iso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage
(Tj=25°C, unless otherwise noted)
Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings 350 350 400 10 100 100 420 3 1000 40~+150 40~+125 Charged part to case, AC for 1 minute Main terminal screw M5 -- 1.47~1.96 15~20 1.47~1.96 15~20 90 Unit V V V V A A W A A °C °C V N·m kg·cm N·m kg·cm g
--
Mounting torque Mounting screw M5
--
Weight
Typical value
ELECTRICAL CHARACTERISTICS
Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) VC E O hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain
(Tj=25°C, unless otherwise noted)
Limits Test conditions VCE=350V, VEB=2V VCB=400V, Emitter open VEB=10V IC=100A, IB=1A IC=100A (diode forward voltage) IC=100A, VCE=2V/5V Min. -- -- -- -- -- -- 100/200 -- VCC=200V, IC=100A, IB1=IB2=2A -- -- Transistor part Diode part Conductive grease applied -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 1.0 1.0 200 2.0 2.5 1.5 -- 2.0 10 3.0 0.3 0.5 0.15 Unit mA mA mA V V V -- µs µs µs °C / W °C / W °C / W
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM100HC-M
HIGH POWER SWITCHING USE
NON-INSULATED TYPE
PERFORMANCE CURVES
COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL)
200 10 4 7 5 3 2 10 3 7 5 3 2 10 2 7 5 3 Tj=25°C 2 Tj=125°C 10 1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 VCE=5.0V VCE=2.0V
DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL)
COLLECTOR CURRENT IC (A)
IB=1.0A 120 IB=0.5A IB=0.2A IB=0.1A 40 Tj=25°C 0 0 1 2 3 4 5
80
COLLECTOR-EMITTER VOLTAGE
VCE (V)
DC CURRENT GAIN hFE
160
IB=2.0A
COLLECTOR CURRENT IC (A)
SATURATION VOLTAGE VCE (sat), VBE (sat) (V)
COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL)
10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 1 1.0 1.4 1.8 2.2 2.6 3.0
SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 1
BASE CURRENT IB (A)
VBE(sat)
VCE=2.0V Tj=25°C
VCE(sat) IB=1A Tj=25°C Tj=125°C 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2
BASE-EMITTER VOLTAGE
VBE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
5
SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL)
10 2 7 VCC=200V 5 IB1=IB2=2A 3 2 10 1 7 5 3 2
ton, ts, tf (µs)
4
Tj=25°C Tj=125°C ts
3 IC=120A 2 IC=50A Tj=25°C Tj=125°C IC=100A IC=70A
SWITCHING TIME
1
0 10 2 2 3 4 5 710 1 2 3 4 5 7 10 0 2 3 4 5 7 10 1
ton 10 0 7 5 tf 3 2 10 1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3
BASE CURRENT IB (A)
COLLECTOR CURRENT
IC (A)
Feb.1999
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