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Part: QM100TX1-HB

Category:
 Discrete
   -> Transistors
     -> Bipolar
             -> Modules

Description: 100A - Transistor Module For Medium Power Switching Use, Insulated Type

Company: Mitsubishi Electronics America, Inc.

Datasheet: Download QM100TX1-HB datasheet     File size : 1034 kB

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Datasheet text preview:
MITSUBISHI TRANSISTOR MODULES
QM100TX1-HB
HIGH POWER SWITCHING USE
INSULATED TYPE
QM100TX1-HB
· · · · ·
IC Collector current ...... 100A VCEX Collector-emitter voltage .. 600V hFE DC current gain..... 750 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271
APPLICATION Inverters, Servo drives, UPS, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
68 8
10.5
B1
B3
B5
(P)+
20
14
62.5 ­0.2 0
74±0.25
20
11­M4
(10) 18.5
18.5
18.5
18.5 (10)
4­5.4±0.1
14
86
24.8
26
LABEL
7 4 2
28.2
B2 U
B6
B4 V
(N)­
80±0.25 94 P (+) B1 B3 U B2 13 13 B4 B5 V B6 N (­) W
W
10
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM100TX1-HB
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol VCEX (SUS) V CEX V CBO V EBO IC ­I C PC IB ­I CSM Tj Tstg V iso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage
(Tj=25°C, unless otherwise noted)
Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 600 7 100 350 4.5 100 1000 ­40~+150 ­40~+125 Charged part to case, AC for 1 minute Main terminal screw M4 2500 0.98~1.47 10~15 1.47~1.96 15~20 0.98~1.47 10~15 520 Unit V V V V A A W A A °C °C V N·m kg·cm N·m kg·cm N·m kg·cm g
--
Mounting torque
Mounting screw M5
B(E) teminal screw M4 -- Weight Typical value
ELECTRICAL CHARACTERISTICS
Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) ­ VC E O hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain
(Tj=25°C, unless otherwise noted)
Limits Test conditions VCE=600V, VEB=2V VCB=600V, Emitter open VEB=7V, Collector open IC=100A, IB=150mA IC=­100A (diode forward voltage) IC=100A, VCE=2.5V Min. -- -- -- -- -- -- 750 -- VCC=300V, IC=100A, IB1=150mA, ­IB2=2.0A -- -- Transistor part (per 1/6 module) Diode part (per 1/6 module) Conductive grease applied (per 1/6 module) -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 1.0 1.0 150 2.5 3.0 1.8 -- 2.0 8.0 3.0 0.35 1.3 0.2 Unit mA mA mA V V V -- µs µs µs °C / W °C / W °C / W
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM100TX1-HB
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 200 COLLECTOR CURRENT IC (A) 2 Tj=25°C DC CURRENT GAIN hFE 10 4 7 5 4 3 2 10 3 7 5 4 3 2 VCE=5.0V DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL)
160 IB=200mA 120
IB=100mA
80
IB=50mA IB=20mA
VCE=2.5V
40
IB=10mA
0
Tj=25°C Tj=125°C 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2
0
1
2
3
4
5 VCE (V)
COLLECTOR-EMITTER VOLTAGE
COLLECTOR CURRENT IC (A)
SATURATION VOLTAGE VCE (sat), VBE (sat) (V)
COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 0 7 5 4 3 2 10 ­1 7 5 4 3 2 10 ­2 2.0 2.4 2.8 3.2 3.6 VBE (V) 4.0 VCE=2.5V Tj=25°C
SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 ­1 10 1 2 3 4 5 7 10 2
BASE CURRENT IB (A)
VBE(sat) VCE(sat)
IB=100mA Tj=25°C Tj=125°C 2 3 4 5 7 10 3
BASE-EMITTER VOLTAGE
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 4 Tj=25°C Tj=125°C
SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) 10 1 VCC=300V 7 IB1=150mA 5 IB2=­2.0A 4 3 2 ts 10 0 7 5 tf 4 3 ton 2 Tj=25°C Tj=125°C ­1 10 10 0 2 3 4 5 7 10 1
3 IC=75A 2 IC=50A IC=30A
1 0 10 ­3 2 3 5 7 10 ­2 2 3 5 7 10 ­1 2 3 5 7 10 0 BASE CURRENT IB (A)
SWITCHING TIME
ton, ts, tf (µs)
2 3 4 5 7 10 2 IC (A)
COLLECTOR CURRENT
Feb.1999


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