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Details, datasheet, quote on part number:QM150DY-HBK
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| Part: | QM150DY-HBK |
| Category: | Discrete => Transistors => Bipolar => Modules |
| Description: | 150A - Transistor Module For Medium Power Switching Use, Insulated Type |
| Company: | Mitsubishi Electronics America, Inc. |
| Datasheet: | Download QM150DY-HBK datasheet File size : 91 kB |
| Request For quote: | Find where to buy QM150DY-HBK
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Datasheet text preview:
MITSUBISHI TRANSISTOR MODULES
QM150DY-HBK
HIGH POWER SWITCHING USE
INSULATED TYPE
QM150DY-HBK
· · · · ·
IC Collector current ...... 150A VCEX Collector-emitter voltage .. 600V hFE DC current gain..... 750 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271
APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
94 45.5 18.8 23 23 17.5 1.3
9
C2E1
80±0.25 9.5 B2X B2 E2 LABEL
8 20.5 28
1.5 29 +0.5
B1 E1
6 12
48±0.25
E2
C1
61
30
E2 B2
6 12
3M5
9±0.1
B2X B1X
20.5
(12)
(12)
(12)
Tab#110, t=0.5
C1 C2E1 E2
B1X
E1 B1
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM150DY-HBK
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol VCEX (SUS) V CEX V CBO V EBO IC I C PC IB I CSM Tj Tstg V iso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage
(Tj=25°C, unless otherwise noted)
Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 600 7 150 150 690 9 1500 40~+150 40~+125 Charged part to case, AC for 1 minute Main terminal screw M5 2500 1.47~1.96 15~20 1.47~1.96 15~20 420 Unit V V V V A A W A A °C °C V N·m kg·cm N·m kg·cm g
--
Mounting torque Mounting screw M5
--
Weight
Typical value
ELECTRICAL CHARACTERISTICS
Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) VC E O hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain
(Tj=25°C, unless otherwise noted)
Limits Test conditions VCE=600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=150A, IB=0.2A IC=150A (diode forward voltage) IC=150A, VCE=2.V Min. -- -- -- -- -- -- 750 -- VCC=300V, IC=150A, IB1=0.3A, IB2=3.0A -- -- Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (per 1/2 module) -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 2.0 2.0 150 2.5 3.0 1.8 -- 2.5 10 2.0 0.18 0.6 0.1 Unit mA mA mA V V V -- µs µs µs °C / W °C / W °C / W
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM150DY-HBK
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL)
500 Tj=25°C 10 4 7 5 4 3 2 10 3 7 5 4 3 2 10 2 10 1
DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL)
COLLECTOR CURRENT IC (A)
DC CURRENT GAIN hFE
400
VCE=5.0V VCE=2.5V
300
200
IB=1A IB=0.5A IB=200mA IB=100mA
100
IB=50mA
0
Tj=25°C Tj=125°C 2 3 4 5 7 10 2 2 3 4 5 7 10 3
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE
VCE (V)
COLLECTOR CURRENT IC (A)
SATURATION VOLTAGE VCE (sat), VBE (sat) (V)
COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL)
10 0 7 5 4 3 2 10 1 7 5 4 3 2 10 2 1.8 2.2 2.6 3.0
SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 1 10 1
BASE CURRENT IB (A)
VBE(sat)
VCE(sat)
VCE=2.5V Tj=25°C 3.4 3.8
IB=200mA Tj=25°C Tj=125°C 2 3 4 5 7 10 2 2 3 4 5 7 10 3
BASE-EMITTER VOLTAGE
VBE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
5 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 1
SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL)
ton, ts, tf (µs)
ts
4
3 IC=200A 2 IC=100A 1 Tj=25°C Tj=125°C 0 10 2 2 3 4 5 7 10 1 2 3 4 5 7 10 0 2 3 4 5 7 10 1 IC=150A
SWITCHING TIME
tf VCC=300V IB1=300mA IB2=3A Tj=25°C Tj=125°C 2 3 4 5 7 10 2 2 34
ton 4 5 7 10 1
BASE CURRENT IB (A)
COLLECTOR CURRENT
IC (A)
Feb.1999
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