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Part: QM150HY-2H
Category:
Discrete
-> Transistors
-> Bipolar
-> Modules
Description: 150A - Transistor Module For Medium Power Switching Use, Insulated Type
Company: Mitsubishi Electronics America, Inc.
Datasheet: Download QM150HY-2H datasheet File size : 1034 kB
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Datasheet text preview:
MITSUBISHI TRANSISTOR MODULES
QM150HY-2H
HIGH POWER SWITCHING USE
INSULATED TYPE
QM150HY-2H
· · · · ·
IC Collector current ...... 150A VCEX Collector-emitter voltage ......... 1000V hFE DC current gain....... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271
APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
108 (7.5) 12 93 46.5
10.5 13 10.5
(7.5)
C
E
C
34
B1
C1 6.5 23
E1 23
C1
E1 B1
5 E1
8
15
8 M5
Tab#110, t=0.5
37
30
23
LABEL
6.5
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM150HY-2H
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol VCEX (SUS) V CEX V CBO V EBO IC I C PC IB I CSM Tj Tstg V iso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage
(Tj=25°C, unless otherwise noted)
Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings 1000 1000 1000 7 150 150 1000 8 1500 40~+150 40~+125 Charged part to case, AC for 1 minute Main terminal screw M5 2500 1.47~1.96 15~20 1.96~2.94 20~30 250 Unit V V V V A A W A A °C °C V N·m kg·cm N·m kg·cm g
--
Mounting torque Mounting screw M6
--
Weight
Typical value
ELECTRICAL CHARACTERISTICS
Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) VC E O hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain
(Tj=25°C, unless otherwise noted)
Limits Test conditions VCE=1000V, VEB=2V VCB=1000V, Emitter open VEB=7V IC=150A, IB=3A IC=150A (diode forward voltage) IC=150A, VCE=2.8V/5V Min. -- -- -- -- -- -- 75/100 -- VCC=600V, IC=150A, IB1=IB2=3A -- -- Transistor part Diode part Conductive grease applied -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 2.0 2.0 200 2.5 3.5 1.8 -- 3.0 15 3.0 0.125 0.6 0.065 Unit mA mA mA V V V -- µs µs µs °C / W °C / W °C / W
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM150HY-2H
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 200 Tj=25°C COLLECTOR CURRENT IC (A) 160 IB=1.5A IB=0.8A IB=0.4A IB=0.2A IB=0.1A 40 DC CURRENT GAIN hFE 10 4 7 5 3 2 10 3 7 5 3 2 10 2 7 5 3 2 10 1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR CURRENT IC (A) DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) Tj=25°C Tj=125°C
120
VCE=5.0V VCE=2.8V
80
0
0
1
2
3
4
5 VCE (V)
COLLECTOR-EMITTER VOLTAGE
SATURATION VOLTAGE VCE (sat), VBE (sat) (V)
COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 1 1.8 2.2 2.6 3.0 3.4 VBE (V) 3.8
SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 1
BASE CURRENT IB (A)
VCE=2.8V Tj=25°C
VBE(sat)
VCE(sat)
IB=3A Tj=25°C Tj=125°C 3 4 5 7 10 1 2 3 4 5 7 10 2 23
BASE-EMITTER VOLTAGE
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 4
Tj=25°C Tj=125°C
SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) 10 2 7 VCC=600V 5 IB1=IB2=3A Tj=25°C 3 Tj=125°C 2 10 1 7 5 3 2
ton, ts, tf (µs)
ts
3
SWITCHING TIME
2
IC=200A
1
IC=50A IC=100A IC=150A
0 10 2 2 3 4 5 7 10 1 2 3 4 5 7 10 0 2 3 4 5 7 10 1 BASE CURRENT IB (A)
tf 10 0 7 ton 5 3 2 10 1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR CURRENT IC (A)
Feb.1999
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