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Details, datasheet, quote on part number:QM15DX-H
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| Part: | QM15DX-H |
| Category: | Discrete => Transistors => Bipolar => Modules |
| Description: | Transistor Module Medium Power Switching Use Insulated Type |
| Company: | Mitsubishi Electronics America, Inc. |
| Datasheet: | Download QM15DX-H datasheet File size : 69 kB |
| Request For quote: | Find where to buy QM15DX-H
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Datasheet text preview:
MITSUBISHI TRANSISTOR MODULES
QM15DX-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
QM15DX-H
· · · · ·
IC Collector current .. 15A VCEX Collector-emitter voltage .. 600V hFE DC current gain....... 50 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271
APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
70 C1
27
C1
E1C2 E1
E2 E2
E1C2
E2
B1 60
B2 E1 5.5 Tr1 B1 Tr2 B2 E2
1.7
Tab#110, t=0.5 8 8 8 8
4.6 11 15 LABEL 26
6.35 2.8 Tab#250, t=0.8
1.2
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM15DX-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol VCEX (SUS) V CEX V CBO V EBO IC I C PC IB I CSM Tj Tstg V iso -- -- Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage Mounting torque Weight
(Tj=25°C, unless otherwise noted)
Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 600 7 15 15 100 0.9 150 40~+150 40~+125 Charged part to case, AC for 1 minute Mounting screw M5 Typical value 2500 1.47~1.96 15~20 75 Unit V V V V A A W A A °C °C V N·m kg·cm g
ELECTRICAL CHARACTERISTICS
Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) VC E O hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain
(Tj=25°C, unless otherwise noted)
Limits Test conditions VCE=600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=15A, IB=0.3A IC=15A (diode forward voltage) IC=15A, VCE=2V/5V Min. -- -- -- -- -- -- 50/100 -- VCC=300V, IC=15A, IB1=IB2=0.3A -- -- Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (per 1/2 module) -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 1.0 1.0 80 2.0 2.5 1.5 -- 1.5 8.0 3.0 1.2 2.5 0.25 Unit mA mA mA V V V -- µs µs µs °C / W °C / W °C / W
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM15DX-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL)
25 Tj=25°C IB=0.4A IB=0.2A IB=0.1A IB=0.06A 10 IB=0.02A 5 10 3 7 5 4 3 2 VCE=2.0V 10 2 7 5 4 3 2 10 1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2
DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL)
Tj=25°C Tj=125°C VCE=5.0V
COLLECTOR CURRENT IC (A)
20
15
0
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE
VCE (V)
DC CURRENT GAIN hFE
COLLECTOR CURRENT IC (A)
SATURATION VOLTAGE VCE (sat), VBE (sat) (V)
COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL)
10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 1 1.2 1.6 2.0 2.4 2.8 3.2
SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 1 10 0 Tj=25°C Tj=125°C IB=0.3A VBE(sat)
BASE CURRENT IB (A)
VCE=2.0V Tj=25°C
VCE(sat)
2 3 4 5 7 10 1
2 3 4 5 7 10 2
BASE-EMITTER VOLTAGE
VBE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
5 2
SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL)
ton, ts, tf (µs)
4
3 IC=5A 2 IC=10A
IC=15A
SWITCHING TIME
10 1 7 5 4 3 2 10 0 7 ton 5 4 3 2 10 0 2 3 4 5 7 10 1
ts tf
1 Tj=25°C Tj=125°C 7 10 2 2 3 4 5 7 10 1 2 3 45 7
VCC=300V IB1=IB2=0.3A Tj=25°C Tj=125°C 2 3 4 5 7 10 2
0
BASE CURRENT IB (A)
COLLECTOR CURRENT
IC (A)
Feb.1999
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