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Details, datasheet, quote on part number:QM15KD-HB
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| Part: | QM15KD-HB |
| Category: | Discrete => Transistors => Bipolar => Modules |
| Description: | Transistor Module Medium Power Switching Use Insulated Type |
| Company: | Mitsubishi Electronics America, Inc. |
| Datasheet: | Download QM15KD-HB datasheet File size : 92 kB |
| Request For quote: | Find where to buy QM15KD-HB
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Datasheet text preview:
MITSUBISHI TRANSISTOR MODULES
QM15KD-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
QM15KD-HB
· · · · ·
IC Collector current .. 15A VCEX Collector-emitter voltage .. 600V hFE DC current gain..... 250 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271
APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders.
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
R6
11 11 11 12.5 10.5 10.5 18.5
BuP BvP BwP K P
25.5
KP
30 18 9
U V W
42
BuP R S T U BuN
A
T
S
R
N BuN BvN BwN
BvP V BvN
BwP W BwN N
18 93 110
18
15
8 A
(24.45)
LABEL
6.5
Tab#110, t=0.5
Tab#250, t=0.8
15
(23.6)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM15KD-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol VCEX (SUS) V CEX V CBO V EBO IC I C PC IB I CSM Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current)
(Inverter part, Tj=25°C)
Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 600 7 15 15 76 1 150 Unit V V V V A A W A A
ABSOLUTE MAXIMUM RATINGS
Symbol V RRM V RSM Ea IO IFSM I2t Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage Recommended AC input voltage DC output current Surge (non-repetitive) forward current I2t for fusing
(Converter part, Tj=25°C)
Conditions Ratings 800 900 220 Three phase full wave rectifying circuit, Tc=79°C One half cycle at 60 Hz, peak value Value for one cycle of surge current 30 300 375 Unit V V V A A A2s
ABSOLUTE MAXIMUM RATINGS
Symbol Tj Tstg V iso -- -- Parameter Junction temperature Storage temperature Isolation voltage Mounting torque Weight
(Common)
Conditions Ratings 40~150 40~125 Charged part to case, AC for 1 minute Mounting screw M5 Typical value 2500 1.47~1.96 15~20 125 Unit °C °C V N·m kg·cm g
ELECTRICAL CHARACTERISTICS
Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) VC E O hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain
(Inverter part, Tj=25°C)
Test conditions VCE=600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=15A, IB=60mA IC=15A (diode forward voltage) IC=15A, VCE=2V Limits Min. -- -- -- -- -- -- 250 -- VCC=300V, IC=15A, IB1=90mA,IB2=0.3A -- -- Transistor part (per 1/6 module) Diode part (per 1/6 module) Conductive grease applied -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 1.0 1.0 40 2.0 2.5 1.5 -- 1.5 10 2.0 1.65 2.8 0.35 Unit mA mA mA V V V -- µs µs µs °C / W °C / W °C / W
ELECTRICAL CHARACTERISTICS
Symbol IRRM V FM Rth (j-c) Rth (c-f) Parameter Repetitive peak reverse current Forward voltage drop Thermal resistance Contact thermal resistance
(Converter part, Tj=25°C)
Test conditions VR=VRRM, Tj=150°C IF=30A Junction to case Case to fin, conductive grease applied Limits Min. -- -- -- -- Typ. -- -- -- -- Max. 5.0 1.3 0.9 0.35 Unit mA V °C / W °C / W
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM15KD-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 50 Tj=25°C COLLECTOR CURRENT IC (A) DC CURRENT GAIN hFE 40 IB=0.6A 30 IB=200mA IB=60mA IB=40mA 10 IB=20mA 3 2 10 3 7 5 4 3 2 10 2 7 5 4 3 10 0 DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) Tj=25°C Tj=125°C VCE=5.0V
VCE=2.0V
20
0
0
1
2
3
4
5 VCE (V)
2 3 4 5 7 10 1
2 3 4 5 7 10 2
COLLECTOR-EMITTER VOLTAGE
COLLECTOR CURRENT IC (A)
SATURATION VOLTAGE VCE (sat), VBE (sat) (V)
COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 0 7 5 4 3 2 10 1 7 5 4 3 2 10 2 1.2 1.6 2.0 2.4 2.8 VBE (V) 3.2 VCE=2.0V Tj=25°C
SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 1 7 IB=60mA Tj=25°C 5 Tj=125°C 4 3 2 VBE(sat) 10 0 7 5 4 3 2 10 1 10 0
BASE CURRENT IB (A)
VCE(sat)
2 3 4 5 7 10 1
2 3 4 5 7 10 2
BASE-EMITTER VOLTAGE
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 4 Tj=25°C Tj=125°C 10 1 7 5 4 3 2 10 0 7 5 4 3 2
SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL)
ton, ts, tf (µs)
ts tf ton
3
2 IC=15A 1 IC=5A IC=10A 0 10 3 2 3 5 710 2 2 3 5 710 1 2 3 5 7 10 0 BASE CURRENT IB (A)
SWITCHING TIME
10 1 10 0
VCC=300V IB1=90mA IB2=300mA Tj=25°C Tj=125°C 2 3 4 5 7 10 1 2 3 4 5 7 10 2 IC (A)
COLLECTOR CURRENT
Feb.1999
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