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Details, datasheet, quote on part number:QM15TB-2HB
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| Part: | QM15TB-2HB |
| Category: | Discrete => Transistors => Bipolar => Modules |
| Description: | Transistor Module Medium Power Switching Use Insulated Type |
| Company: | Mitsubishi Electronics America, Inc. |
| Datasheet: | Download QM15TB-2HB datasheet File size : 82 kB |
| Request For quote: | Find where to buy QM15TB-2HB
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Datasheet text preview:
MITSUBISHI TRANSISTOR MODULES
QM15TB-2HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
QM15TB-2HB
· · · · ·
IC Collector current .. 15A VCEX Collector-emitter voltage ......... 1000V hFE DC current gain..... 250 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271
APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
107 81 20 O
P
P 21.5 17.5 25.5 BuP EuP BvP EvP V BvN EvN BwP EwP W BwN EwN
21.5
BuP EuP BvP EvP BwP EwP
45
21
18
30
U N
V
W
U BuN EuN N
O
BuN EuN BvN EvN BwN EwN
7.5 14 7.5 14 7.5 16 93 Tab#110, t=0.5 (Fig. 2) Tab#250, t=0.8 (Fig. 1)
1.65
Fig. 1 8 6.35
Fig. 2 3.8 2.8
1.2
28.2
3.4 7.95
7.5
5.5
Note: All Transistor Units are 3-Stage Darlingtons.
1
1
7.1
LABEL
17.5
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM15TB-2HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol VCEX (SUS) V CEX V CBO V EBO IC I C PC IB I CSM Tj Tstg V iso -- -- Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage Mounting torque Weight
(Tj=25°C, unless otherwise noted)
Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings 1000 1000 1000 7 15 15 150 1 150 40~+150 40~+125 Charged part to case, AC for 1 minute Mounting screw M5 Typical value 2500 1.47~1.96 15~20 230 Unit V V V V A A W A A °C °C V N·m kg·cm g
ELECTRICAL CHARACTERISTICS
Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) VC E O hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain
(Tj=25°C, unless otherwise noted)
Limits Test conditions VCE=1000V, VEB=2V VCB=1000V, Emitter open VEB=7V IC=15A, IB=60mA IC=15A (diode forward voltage) IC=15A, VCE=3.0V Min. -- -- -- -- -- -- 250 -- VCC=600V, IC=15A, IB1=90mA, IB2=0.3A -- -- Transistor part (per 1/6 module) Diode part (per 1/6 module) Conductive grease applied (per 1/6 module) -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 1.0 1.0 50 3.0 3.5 1.8 -- 2.0 10 3.0 0.8 2.0 0.35 Unit mA mA mA V V V -- µs µs µs °C / W °C / W °C / W
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM15TB-2HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL)
50 2 Tj=25°C 40
0mA IB=20 0mA IB=10 A IB=60m
DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL)
COLLECTOR CURRENT IC (A)
30
DC CURRENT GAIN hFE
10 3 7 5 4 3 2 10 2 7 5 4 3 2 10 0
VCE=5.0V
VCE=3.0V
20
IB=20mA
10 IB=10mA 0 0 1 2 3 4 5
Tj=25°C Tj=125°C 2 3 4 5 7 10 1 2 3 4 5 7 10 2
COLLECTOR-EMITTER VOLTAGE
VCE (V)
COLLECTOR CURRENT IC (A)
SATURATION VOLTAGE VCE (sat), VBE (sat) (V)
COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL)
10 0 7 5 4 3 2 10 1 7 5 4 3 2 10 2 1.8 2.2 2.6 3.0 3.4 3.8 Tj=25°C VCE=3.0V
SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 1 10 0
BASE CURRENT IB (A)
VBE(sat)
VCE(sat) IB=60mA Tj=25°C Tj=125°C 2 3 4 5 7 10 1 2 3 4 5 7 10 2
BASE-EMITTER VOLTAGE
VBE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
5 2
SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL)
ton, ts, tf (µs)
4
3
SWITCHING TIME
IC=20A
10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 0
ts tf
2 IC=10A 1 Tj=25°C Tj=125°C 0 10 3 2 3 4 5 7 10 2 2 3 4 5 710 1 2 3 4 5 7 10 0 IC=15A
ton IB1=90mA IB2=300mA Tj=25°C Tj=125°C 2 3 4 5 7 10 1 2 3 4 5 7 10 2
BASE CURRENT IB (A)
COLLECTOR CURRENT
IC (A)
Feb.1999
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