|
|
Part: QM15TG-9B
Category:
Discrete
-> Transistors
-> Bipolar
-> Modules
Description: Transistor Module, Medium Power Switching Use, Insulated Type: 500v, 15a
Company: Mitsubishi Electronics America, Inc.
Datasheet: Download QM15TG-9B datasheet File size : 1034 kB
Request For quote: Find where to buy QM15TG-9B
Datasheet text preview:
MITSUBISHI TRANSISTOR MODULES
QM15TG-9B
MEDIUM POWER SWITCHING USE
INSULATED TYPE
QM15TG-9B
· · · ·
IC Collector current .. 15A VCEX Collector-emitter voltage .. 500V hFE DC current gain..... 250 Insulated Type
APPLICATION Air conditioner, Small to medium size inverters
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
88 8 8 8 8 8 16.5 25.4 Tab#250, t=0.8
25 39
BuP EuP BvP EvP BwP EwP P
16
N BuN 16
U BvN 16 76 64
V
W BwN E() 16 16.5 6 2R6 6.5 Tab#110, t=0.5
P
26.5
BuP EuP U BuN N
BvP EvP V BvN
BwP EwP W BwN E()
17
LABEL
16
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM15TG-9B
MEDIUM POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol VCEX (SUS) V CEX V CBO V EBO IC I C PC IB I CSM Tj Tstg V iso -- -- Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage Mounting torque Weight
(Tj=25°C, unless otherwise noted)
Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings 450 500 500 7 15 15 83 1 150 40~+150 40~+125 Charged part to case, AC for 1 minute Mounting screw M5 Typical value 2000 1.47~1.96 15~20 70 Unit V V V V A A W A A °C °C V N·m kg·cm g
ELECTRICAL CHARACTERISTICS
Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) VC E O hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain
(Tj=25°C, unless otherwise noted)
Limits Test conditions VCE=500V, VEB=2V VCB=500V, Emitter open VEB=7V IC=15A, IB=60mA IC=15A (diode forward voltage) IC=15A, VCE=2V Min. -- -- -- -- -- -- 250 -- VCC=250V, IC=15A, IB1=90mA, IB2=0.3A -- -- Transistor part (per1/6 module) Diode part (per 1/6 module) Conductive grease applied (per 1/6 module) -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 1.0 1.0 40 2.0 2.5 1.5 -- 1.5 10 2.0 1.5 2.5 0.55 Unit mA mA mA V V V -- µs µs µs °C / W °C / W °C / W
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM15TG-9B
MEDIUM POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL)
50 Tj=25°C 2 10 3 7 5 4 3 2 10 2 7 5 4 3 2 10 0
DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL)
Tj=25°C Tj=125°C VCE=5.0V VCE=2.0V
COLLECTOR CURRENT IC (A)
40
30
IB=200mA IB=100mA
IB=60mA
20
10
IB=20mA
IB=10mA
0
DC CURRENT GAIN hFE
0
1
2
3
4
5
2 3 4 5 7 10 1
2 3 4 5 7 10 2
COLLECTOR-EMITTER VOLTAGE
VCE (V)
COLLECTOR CURRENT IC (A)
SATURATION VOLTAGE VCE (sat), VBE (sat) (V)
COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL)
10 0 7 5 4 3 2 10 1 7 5 4 3 2 10 2 0.8 1.2 1.6 2.0 2.4 2.8 VCE=2.0V Tj=25°C
SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 1 10 0 Tj=25°C Tj=125°C VBE(sat) IB=60mA
BASE CURRENT IB (A)
VCE(sat)
2 3 4 5 7 10 1
2 3 4 5 7 10 2
BASE-EMITTER VOLTAGE
VBE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
5 4 10 1 7 5 4 3 2 10 0 7 5 4 3 2
SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL)
ton, ts, tf (µs)
ts
3 IC=10A 2
SWITCHING TIME
IC=20A
ton
1 Tj=25°C Tj=125°C IC=15A 0 10 3 2 3 5 710 2 2 3 5 7 10 1 2 3 5 7 10 0
tf
10 1 10 0
2 3 4 5 7 10 1
VCC=250V IB1=90mA IB2=300mA Tj=25°C Tj=125°C 2 3 4 5 7 10 2
BASE CURRENT IB (A)
COLLECTOR CURRENT
IC (A)
Feb.1999
Others parts begin by qm
QM-1
|
|
|
