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Details, datasheet, quote on part number:RA03M8894M
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Datasheet text preview:
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA03M8894M
BLOCK DIAGRAM
2 3
MITSUBISHI RF MOSFET MODULE
889-941MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO
DESCRIPTION The RA03M8894M is a 3.6-watt RF MOSFET Amplifier Module for 7.2-volt mobile radios that operate in the 889- to 941-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (V GG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 2.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 3V (typical) and 3.5V (maximum). At VGG= 3. 5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. FEATURES · Enhancement-Mode MOSFET Transistors (IDD 0 @ VDD= 7.2V, VGG=0V) · Pout> 3.6W @ VDD= 7.2V, VGG= 3. 5V, Pin= 50mW · T> 32% @ Pout=3W (V GG control), VDD= 7.2V, Pin= 50mW · Broadband Frequency Range: 889-941MHz · Low-Power Control Current IGG= 1mA (typ) at VGG= 3. 5V · Module Size: 30 x 10 x 5.4 mm · Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power ORDERING INFORMATION: ORDER NUMBER RA03M8894M-E01
(Japan - packed without desiccator)
1
4 5
1 2 3 4 5
RF Input (Pi n) Gate Voltage (VGG), Power Control Drain Voltage (VDD), Battery RF Output (Pout) RF Ground (Case)
PACKAGE CODE: H46S
SUPPLY FORM Antistatic tray, 25 modules/tray
RA03M8894M-01
RA03M8894M
MITSUBISHI ELECTRIC 1/9
25 April 2003
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA03M8894M
RATING 9.2 4 70 5 -30 to +90 -40 to +110 UNIT V V mW W °C °C
MITSUBISHI RF POWER MODULE
MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified)
SYMBOL VDD VGG Pi n Pout Tcase(OP) Tstg PARAMETER Drain Voltage Gate Voltage Input Power Output Power Operation Case Temperature Range Storage Temperature Range CONDITIONS VGG<3.5 V VDD<7.2 V, Pi n= 0 m W f=889-941MHz, ZG=ZL=50
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50 , unless otherwise specified) SYMBOL PARAMETER
f Pout T 2fo in IGG -- -- Frequency Range Output Power Total Efficiency 2 Harmonic Input VSWR Gate Current Stability Load VSWR Tolerance
nd
CONDITIONS
VDD=7.2 V,VGG=3.5 V, Pi n=50 m W Pout=3W (VGG control), VDD=7.2V, Pi n= 5 0 m W VDD=4.0-9.2 V, Pi n=25-70mW, Pout<5W (VGG control), Load VSWR=4:1 VDD=9.2V, Pi n=50mW, Pout=3.6 W (VGG control), Load VSWR=20:1
MIN
889 3.6 32
TYP
MAX
941
UNIT
MHz W %
-30 4:1 1 No parasitic oscillation No degradation or destroy
dBc -- mA -- --
All parameters, conditions, ratings, and limits are subject to change without notice.
RA03M8894M
MITSUBISHI ELECTRIC 2/9
25 April 2003
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA03M8894M
MITSUBISHI RF POWER MODULE
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50 , unless otherwise specified)
OUTPUT POWER, TOTAL EFFICIENCY, and INPUT VSWR versus FREQUENCY
8 OUTPUT POWER Pout(W) 7 INPUT VSWR in (-) 6 5 4 3 2 1
T @P out =3.0W
VDD=7.2V Pin =50mW P out @V GG=3.5V
80 60 50 40 30 20 10 TOTAL EFFICIENCY T(%) 70
in @P out =3.0W
0 0 870 880 890 900 910 920 930 940 950 960 FREQUENCY f(MHz)
OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER
50 OUTPUT POWER P out( d B m ) POWER GAIN Gp(dB) 40 30 20
IDD
Gp P out
OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER
50 DRAIN CURRENT I DD(A) OUTPUT POWER P out( d B m ) POWER GAIN Gp(dB) 40 30 20 10 0 -15 -10 -5 0 5
Gp P out
5 4 3 2
f=889MHz, V DD= 7 . 2 V , V GG =3.5V
5 4 3
IDD
f=914MHz, V DD= 7 . 2 V , V GG=3.5V
2 1 0 20
10 0 -15 -10 -5 0 5
1 0 20
10
15
10
15
I N P U T POWER Pin (dBm)
INPUT POWER Pin( d B m )
OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER
50 OUTPUT POWER P out( d B m ) POWER GAIN Gp(dB) 40 30 20 10 0 -15
I DD
f=941MHz, V DD= 7 . 2 V , V GG =3.5V Gp Pout
5 4 3 2 1 0 20 DRAIN CURRENT I DD(A)
-10 -5 0 5 10 15 INPUT POWER Pin( d B m )
OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE
10 9 8 7 6 5 4 3 2 1 0 2 5 DRAIN CURRENT I DD(A) 4
P out
OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE
10 9 8 7 6 5 4 3 2 1 0 2 5 DRAIN CURRENT I DD(A)
f=914MHz, V G G 3.5V, = P in 50mW = Pout
OUTPUT POWER Pout(W)
OUTPUT POWER P out(W)
f=889MHz, V G G 3.5V, = P i n= 5 0 m W
3 2
ID D
1 0 3 4 5 6 7 8 DRAIN VOLTAGE VDD( V ) 9 10
ID D
3
4 5 6 7 8 DRAIN VOLTAGE V DD( V )
9
10
RA03M8894M
MITSUBISHI ELECTRIC 3/9
DRAIN CURRENT IDD( A ) 4 3 2 1 0
25 April 2003
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