|Category||RF & Microwaves => Modules->800MHz Band|
|Company||Mitsubishi Electronics America, Inc.|
|Datasheet||Download RA03M8894M datasheet
DESCRIPTION The 3.6-watt RF MOSFET Amplifier Module for 7.2-volt mobile radios that operate in the to 941-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (V GG=0V), only a small leakage current flows into the drain and the RF input signal attenuates to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 2.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 3V (typical) and 3.5V (maximum). At VGG=3.5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. FEATURES Enhancement-Mode MOSFET Transistors (IDD (V GG control), VDD=7.2V, Pin=50mW Broadband Frequency Range: 889-941MHz Low-Power Control Current IGG=1mA (typ) at VGG=3.5V Module Size: x 5.4 mm Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power
RF Input (Pin) Gate Voltage (VGG), Power Control Drain Voltage (VDD), Battery RF Output (Pout) RF Ground (Case)
SYMBOL VDD VGG Pin Pout Tcase(OP) Tstg PARAMETER Drain Voltage Gate Voltage Input Power Output Power Operation Case Temperature Range Storage Temperature Range CONDITIONS f=889-941MHz, ZG=ZL=50ELECTRICAL CHARACTERISTICS ZG=ZL=50 , unless otherwise specified) SYMBOL PARAMETER
f Pout 2fo in IGG Frequency Range Output Power Total Efficiency 2 Harmonic Input VSWR Gate Current Stability Load VSWR Tolerance Pin=25-70mW, Pout<5W (VGG control), Load Pin=50mW, Pout=3.6W (VGG control), Load VSWR=20:1All parameters, conditions, ratings, and limits are subject to change without notice.
OUTPUT POWER, TOTAL EFFICIENCY, and INPUT VSWR versus FREQUENCY
OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER
50 OUTPUT POWER P out(dBm) POWER GAIN Gp(dB) 40
50 DRAIN CURRENT I DD(A) OUTPUT POWER P out(dBm) POWER GAIN Gp(dB) 40
OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE
DRAIN CURRENT IDD(A) DRAIN CURRENT I DD(A)
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