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Details, datasheet, quote on part number:RA06H8285M
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Datasheet text preview:
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA06H8285M
BLOCK DIAGRAM
MITSUBISHI RF MOSFET MODULE
820-851MHz 6W 12.5V, 3 Stage Amp. For MOBILE RADIO
DESCRIPTION The RA06H8285MB is a 6-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 820- to 851-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. FEATURES · Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=12.5V, VGG=0V) · Pout>6W , T>35% @ VDD=12.5V, VGG=5V, Pin=1mW · Broadband Frequency Range: 820-851MHz · Low-Power Control Current IGG=1mA (typ) at VGG=5V · Module Size: 60.5 x 14 x 6.4 mm · Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power ORDERING INFORMATION: ORDER NUMBER RA06H8285M-E01 RA06H8285M-01
(Japan - packed without desiccator)
2
3
1
4 5
1 2 3 4 5
RF Input (Pin) Gate Voltage (VGG), Power Control Drain Voltage (VDD), Battery RF Output (Pout) RF Ground (Case)
PACKAGE CODE: H11S
SUPPLY FORM Antistatic tray, 20 modules/tray
RA06H8285M
MITSUBISHI ELECTRIC 1/9
26 May 2003
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA06H8285M
RATING 17 6 10 10 -30 to +110 -40 to +110 UNIT V V mW W °C °C
MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified)
SYMBOL PARAMETER VDD VGG Pin Pout Tcase(OP) Tstg Drain Voltage Gate Voltage Input Power Output Power Operation Case Temperature Range Storage Temperature Range CONDITIONS VGG<5V VDD<12.5V, Pin=0W f=820-851MHz, Z G= Z L = 5 0
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50, unless otherwise specified) SYMBOL PARAMETER
f Pout T 2fo in I GG -- -- Frequency Range Output Power Total Efficiency 2
nd
CONDITIONS
VDD=12.5V, VGG=5V Pout=6W(VGG control) VDD=12.5V Pin=1m W VDD=10.0-15.2V, Pin=0.5-2mW, Pout<8W (VGG control), Load VSWR=3:1 VDD=15.2V, Pin=1m W , Pout=6W (VGG control), Load VSWR=20:1
MIN
820 6 35
TYP
MAX
851
UNIT
MHz W %
Harmonic
-30 4:1 1 No parasitic oscillation No degradation or destroy
dBc -- mA -- --
Input VSWR Gate Current Stability Load VSWR Tolerance
All parameters, conditions, ratings, and limits are subject to change without notice.
RA06H8285M
MITSUBISHI ELECTRIC 2/9
26 May 2003
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA06H8285M
2nd, 3rd HARMONICS versus FREQUENCY
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)
OUTPUT POWER, TOTAL EFFICIENCY, and INPUT VSWR versus FREQUENCY
14 OUTPUT POWER P out( W ) INPUT VSWR in (-) 12 10 8 6 4 2 0 820
in @Pout=6W
VDD=12.5V Pin=1mW Pout @VGG=5V
140 120 TOTAL EFFICIENCY T(%) 100 80
T @Pout=6W
-20 HARMONICS (dBc) -30 -40 -50 -60 -70 820
2
nd
VDD=12.5V Pin=1mW
60 40 20 0 860
@Pout=6W
3rd harmonics: <-60dBc @Pout=6W
830 840 850 FREQUENCY f(MHz)
830 840 850 FREQUENCY f(MHz)
860
OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER
50 OUTPUT POWER Pout(dBm) POWER GAIN Gp(dB)
Gp Pout
OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER
50 DRAIN CURRENT I DD(A) OUTPUT POWER P out( d B m ) POWER GAIN Gp(dB)
Gp
5 4 3
IDD
f=820MHz, VDD=12.5V, VGG=5V
5
Pout
40 30 20 10 0 -20 -15 -10 -5 0
40 30 20 10 0 -20 -15 -10 -5 0
4 3 2
2 1 0
IDD
f=836MHz, VDD=12.5V, VGG=5V
1 0 10
5
10
5
INPUT POWER Pin(dBm)
INPUT POWER Pin(dBm)
OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER
50 OUTPUT POWER Pout(dBm) POWER GAIN Gp(dB)
Gp
5
Pout
40 30 20 10 0 -20 -15 -10 -5 0
4 3 2
IDD
f=851MHz, VDD=12.5V, VGG=5V
1 0
5
10
INPUT POWER Pin(dBm)
OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE
20 OUTPUT POWER Pout( W ) 15 10 5 0 2 4 6 8 10 12 DRAIN VOLTAGE VDD(V) 14 16
IDD
f=820MHz, VGG=5V, Pin=1mW Pout
DRAIN CURRENT IDD(A)
OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE
4 DRAIN CURRENT IDD(A) OUTPUT POWER Pout( W ) 3 2 1 0 20 15 10
IDD
f=836MHz, VGG=5V, Pin=1mW Pout
4 3 2 1 0 2 4 6 8 10 12 DRAIN VOLTAGE VDD(V) 14 16 DRAIN CURRENT IDD(A)
5 0
RA06H8285M
MITSUBISHI ELECTRIC 3/9
DRAIN CURRENT IDD(A)
26 May 2003
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