|
|
Part: RA07H0608M-01
Category:
RF & Microwaves
-> Modules->VHF 50-300MHz/Low Power
Description:
Company: Mitsubishi Electronics America, Inc.
Datasheet: Download RA07H0608M-01 datasheet File size : 89 kB
Request For quote: Find where to buy RA07H0608M-01
Datasheet text preview:
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA07H0608M
BLOCK DIAGRAM
2 3
MITSUBISHI RF MOSFET MODULE
68-88MHz 7W 12.5V, 2 Stage Amp. For PORTABLE/MOBILE RADIO
DESCRIPTION The RA07H0608M is a 7-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 68- to 88-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (V GG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. FEATURES · Enhancement-Mode MOSFET Transistors (IDD 0 @ VDD= 12.5V, VGG=0V) · Pout> 7W @ VDD= 12.5V, VGG=5V, Pin= 30mW · T> 38% @ Pout=7W (V GG control), VDD= 12.5V, Pin= 30mW · Broadband Frequency Range: 68-88MHz · Low-Power Control Current IGG= 1mA (typ) at VGG=5V · Module Size: 30 x 10 x 5.4 mm · Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power ORDERING INFORMATION: ORDER NUMBER RA07H0608M-E01
(Japan - packed without desiccator)
1
4 5
1 2 3 4 5
RF Input (Pi n) Gate Voltage (VGG), Power Control Drain Voltage (VDD), Battery RF Output (Pout) RF Ground (Case)
PACKAGE CODE: H46S
SUPPLY FORM Antistatic tray, 25 modules/tray
RA07H0608M-01
RA07H0608M
MITSUBISHI ELECTRIC 1/9
25 April 2003
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA07H0608M
MITSUBISHI RF POWER MODULE
MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified)
SYMBOL VDD VGG Pi n Pout Tcase(OP) Tstg PARAMETER Drain Voltage Gate Voltage Input Power Output Power Operation Case Temperature Range Storage Temperature Range CONDITIONS VGG<5V VDD<12.5 V, Pi n= 0 m W f=68-88MHz, ZG=ZL=50 RATING 16 6 50 10 -30 to +90 -40 to +110 UNIT V V mW W °C °C
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50 , unless otherwise specified) SYMBOL PARAMETER
f Pout T 2fo in IGG -- -- Frequency Range Output Power Total Efficiency 2 Harmonic Input VSWR Gate Current Stability Load VSWR Tolerance
nd
CONDITIONS
VDD=12.5 V,VGG=5V, Pi n=30 m W Pout=7W (VGG control), VDD=12.5V, Pi n= 3 0 m W VDD=7.2 -15.0 V, Pi n=15-50mW, Pout<8W (VGG control), Load VSWR=4:1 VDD=13.2V, Pi n=30mW, Pout=7W (VGG control), Load VSWR=20:1
MIN
68 7 38
TYP
MAX
88
UNIT
MHz W %
-18 4:1 1 No parasitic oscillation No degradation or destroy
dBc -- mA -- --
All parameters, conditions, ratings, and limits are subject to change without notice.
RA07H0608M
MITSUBISHI ELECTRIC 2/9
25 April 2003
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA07H0608M
2nd, 3rd HARMONICS versus FREQUENCY
-10
MITSUBISHI RF POWER MODULE
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50 , unless otherwise specified)
OUTPUT POWER, TOTAL EFFICIENCY, and INPUT VSWR versus FREQUENCY
14
out(W)
140
Pout @VGG =5V
INPUT VSWR in (-)
12 10 8 6 4 2 0 60
120 100 80 HARMONICS (dBc)
-20 -30 -40 -50 -60 60 65
2 @Pout=7W
nd
VDD =12.5V Pi n=30mW
OUTPUT POWER P
T @Pout =7W
VDD=12.5V Pin =30mW
60 40 20 0 90
TOTAL EFFICIENCY T(%)
in @Pout =7W
3 @Pout=7W
rd
65 70 75 80 85 FREQUENCY f(MHz)
70 75 80 FREQUENCY f(MHz)
85
90
OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER
50 OUTPUT POWER Pout(dBm) POWER GAIN Gp(dB) 40 30 20 10 0 -15
IDD
f=68MHz, VD D=12.5V, VG G=5V Pout Gp
OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER
50
DD ( A )
5 OUTPUT POWER Pout(dBm) POWER GAIN Gp(dB) 4 3 2 1 0
5
Pout Gp
40 30 20 10 0 -15
4 3 2
DRAIN CURRENT I
IDD
f=78MHz, VD D=12.5V, VG G=5V
1 0
-10
-5
0
5
10
15
20
INPUT POWER Pin(dBm) OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER
50 OUTPUT POWER P out( d B m ) POWER GAIN Gp(dB) 40 30 20 10 0 -15 -10 -5 0 5
I DD
f=88MHz, V DD=12.5V, V GG=5V P out Gp
-10 - 5 0 5 10 15 INPUT POWER Pin( d B m )
20
5 4 3 2 1 0 DRAIN CURRENT I DD(A)
10
15
20
INPUT POWER Pin(dBm)
OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE
20 OUTPUT POWER Pout(W) 15 10 5 0 2 4 6 8 10 12 DRAIN VOLTAGE V DD(V) 14 16
f=68MHz, V G G=5V, P i n=30mW P out
OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE
4 DRAIN CURRENT IDD(A) OUTPUT POWER Pout(W) 3 2 1 0 20 15 10 5 0 2 4 6 8 10 12 DRAIN VOLTAGE VDD(V) 14 16
f=78MHz, VGG =5V, Pin =30mW Pout
4 3 2
I DD
ID D
1 0
RA07H0608M
MITSUBISHI ELECTRIC 3/9
DRAIN CURRENT I DD(A)
25 April 2003
DRAIN CURRENT
I D D (A)
Others parts begin by ra
RA-1 RA-2 RA-3
|
|
|
