|Category||RF & Microwaves => Modules->800MHz Band|
|Company||Mitsubishi Electronics America, Inc.|
|Datasheet||Download RA13H8891MA datasheet
DESCRIPTION The 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the to 915-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 3.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. FEATURES Enhancement-Mode MOSFET Transistors VGG=5V, Pin=200mW Broadband Frequency Range: 889-915MHz Low-Power Control Current IGG=1mA (typ) at VGG=5V Module Size: x 9.88 mm Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power
RF Input (Pin) Gate Voltage (VGG), Power Control Drain Voltage (VDD), Battery RF Output (Pout) RF Ground (Case)
SYMBOL PARAMETER VDD VGG Pin Pout Tcase(OP) Tstg Drain Voltage Gate Voltage Input Power Output Power Operation Case Temperature Range Storage Temperature Range CONDITIONS f=889-915MHz, ZG=ZL=50 RATING to +110 UNIT W °CELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50, unless otherwise specified) SYMBOL PARAMETER
f Pout 2fo in IGG Frequency Range Output Power Total Efficiency 2
Input VSWR Gate Current Stability Load VSWR Tolerance
to 20W (VGG control), Load Pin=200mW, Pout=13W (VGG control), Load VSWR=20:1
All parameters, conditions, ratings, and limits are subject to change without notice.
OUTPUT POWER, TOTAL EFFICIENCY, and INPUT VSWR versus FREQUENCY
OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER
OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE
OUTPUT POWER Pout (dBm) POWER GAIN Gp(dB)
OUTPUT POWER Pout(dBm) POWER GAIN Gp(dB)
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