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Details, datasheet, quote on part number:RA35H1516M
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Datasheet text preview:
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA35H1516M
BLOCK DIAGRAM
2 3
MITSUBISHI RF MOSFET MODULE
154-162MHz 40W 12.5V MOBILE RADIO
DESCRIPTION The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to 162-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. FEATURES · Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=12.5V, VGG=0V) · Pout>40W , T>50% @ VDD=12.5V, VGG=5V, Pin=50mW · Low-Power Control Current IGG=1mA (typ) at VGG=5V · Module Size: 66 x 21 x 9.88 mm · Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power ORDERING INFORMATION: ORDER NUMBER RA35H1516M-E01 RA35H1516M-01
(Japan - packed without desiccator)
1
4 5
1 2 3 4 5
RF Input (Pin) Gate Voltage (VGG), Power Control Drain Voltage (VDD), Battery RF Output (Pout) RF Ground (Case)
SUPPLY FORM Antistatic tray, 10 modules/tray
RA35H1516M
MITSUBISHI ELECTRIC 1/8
15 April 2003
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA35H1516M
MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified)
SYMBOL PARAMETER VDD VGG Pin Pout Tcase(OP) Tstg Drain Voltage Gate Voltage Input Power Output Power Operation Case Temperature Range Storage Temperature Range CONDITIONS VGG<5V VDD<12.5V, Pin=0mW f=154-162MHz, Z G= Z L = 5 0 RATING 17 6 100 50 -30 to +110 -40 to +110 UNIT V V mW W °C °C
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50, unless otherwise specified) SYMBOL PARAMETER
f Pout T 2fo in I GG -- -- Frequency Range Output Power Total Efficiency 2
nd
CONDITIONS
MIN
154 40
TYP
MAX
162
UNIT
MHz W %
Harmonic
Input VSWR Gate Current Stability Load VSWR Tolerance
VDD=12.5V VGG=5V Pin=50mW
50 -50 3:1 1
dBc -- mA -- --
VDD=8.0-15.2V, Pin=25-70mW, Pout<50W (VGG control), Load VSWR=3:1 VDD=15.2V, Pin=50 m W , Pout=40W (VGG control), Load VSWR=20:1
No parasitic oscillation No degradation or destroy
All parameters, conditions, ratings, and limits are subject to change without notice.
RA35H1516M
MITSUBISHI ELECTRIC 2/8
15 April 2003
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA35H1516M
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)
OUTPUT POWER, TOTAL EFFICIENCY, and INPUT VSWR versus FREQUENCY
60 OUTPUT POWER P out( W ) INPUT VSWR in (-) 50 40 30 20 10 0 150
t @Pout=30W
VDD=12.5V Pin=50mW Pout @VGG=5V
2nd, 3rd HARMONICS versus FREQUENCY
-20 TOTAL EFFICIENCY T(%) HARMONICS (dBc) -30 -40 -50 -60
3rd
2nd VDD=12.5V Pin=50mW Pout=30W @VGG control
120 100 80 60 40 20 0 170
in @Pout=30W
155 160 165 FREQUENCY f(MHz)
-70 150
155 160 165 FREQUENCY f(MHz)
170
OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER
60 OUTPUT POWER Pout(dBm) POWER GAIN Gp(dB) 50
Gp Pout
OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER
60 OUTPUT POWER Pout(dBm) POWER GAIN Gp(dB) DRAIN CURRENT IDD(A) 50 40 30 20 10 0 -10 -5 0 5 10 15 20 INPUT POWER Pin(dBm)
IDD
f=162MHz, VDD=12.5V, VGG=5V Pout Gp
12 10 8 6 4
IDD
f=154MHz, VDD=12.5V, VGG=5V
12 DRAIN CURRENT 10 8 6 4 2 0
40 30 20 10 0 -10 -5 0 5 10 15 20 INPUT POWER Pin(dBm)
2 0
OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE
60 OUTPUT POWER P out( W ) 50 40 30 20 10 0 2 4 6 8 10 12 DRAIN VOLTAGE VDD(V) 14
f=154MHz, VDD=12.5V, VGG=5V P out
OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE
60 OUTPUT POWER P out( W ) DRAIN CURRENT I DD(A) 50 40 30 20 10 0 2 4 6 8 10 12 DRAIN VOLTAGE VDD(V) 14
IDD
f=162MHz, VDD=12.5V, VGG=5V
12 10 8 6
IDD
12 DRAIN CURRENT I DD(A) DRAIN CURRENT I DD(A) 10
Pout
8 6 4 2 0
4 2 0
OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE
60 OUTPUT POWER P out( W ) 50 40 30 20 10 0 2 2.5 3 3.5 4 4.5 GATE VOLTAGE VGG(V) 5 5.5
IDD
f=154MHz, VDD=12.5V, VGG=5V Pout
OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE
60 OUTPUT POWER P out( W ) DRAIN CURRENT I DD(A) 50 40 30 20 10 0 2 2.5 3 3.5 4 4.5 GATE VOLTAGE VGG(V) 5 5.5
IDD
f=162MHz, VDD=12.5V, VGG=5V Pout
12 10 8 6 4 2 0
12 10 8 6 4 2 0
RA35H1516M
MITSUBISHI ELECTRIC 3/8
IDD(A)
15 April 2003
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