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Details, datasheet, quote on part number:RA45H4452M
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Datasheet text preview:
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA45H4452M
BLOCK DIAGRAM
MITSUBISHI RF MOSFET MODULE
440-520MHz 45W 12.5V MOBILE RADIO
DESCRIPTION The RA45H4452M is a 45-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to 520-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. FEATURES · Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=12.5V, VGG=0V) · Pout>45W , T>35% @ VDD=12.5V, VGG=5V, Pin=50mW · Broadband Frequency Range: 440-520MHz · Low-Power Control Current IGG=1mA (typ) at VGG=5V · Module Size: 66 x 21 x 9.88 mm · Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power ORDERING INFORMATION: ORDER NUMBER RA45H4452M-E01 RA45H4452M-01
(Japan - packed without desiccator)
2
3
1
4 5
1 2 3 4 5
RF Input (Pin) Gate Voltage (VGG), Power Control Drain Voltage (VDD), Battery RF Output (Pout) RF Ground (Case)
SUPPLY FORM Antistatic tray, 10 modules/tray
RA45H4452M
MITSUBISHI ELECTRIC 1/9
23 Dec 2002
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA45H4452M
RATING 17 6 100 55 -30 to +110 -40 to +110 UNIT V V mW W °C °C
MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified)
SYMBOL PARAMETER VDD VGG Pin Pout Tcase(OP) Tstg Drain Voltage Gate Voltage Input Power Output Power Operation Case Temperature Range Storage Temperature Range CONDITIONS VGG<5V VDD<12.5V, Pin=0mW f=440-520MHz, Z G= Z L = 5 0
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50, unless otherwise specified) SYMBOL PARAMETER
f Pout T 2fo in I GG -- -- Frequency Range Output Power Total Efficiency 2
nd
CONDITIONS
MIN
440 45
TYP
MAX
520
UNIT
MHz W %
Harmonic
Input VSWR Gate Current Stability Load VSWR Tolerance
VDD=12.5V VGG=5V Pin=50mW
35 -25 3:1 1
dBc -- mA -- --
VDD=10.0-15.2V, Pin=25-70mW, Pout<55W (VGG control), Load VSWR=3:1 VDD=15.2V, Pin=50m W , Pout=45W (VGG control), Load VSWR=20:1
No parasitic oscillation No degradation or destroy
All parameters, conditions, ratings, and limits are subject to change without notice.
RA45H4452M
MITSUBISHI ELECTRIC 2/9
23 Dec 2002
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA45H4452M
2nd, 3rd HARMONICS versus FREQUENCY
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)
OUTPUT POWER, TOTAL EFFICIENCY, and INPUT VSWR versus FREQUENCY
80 OUTPUT POWER Pout ( W ) 70 INPUT VSWR in (-) 60 50 40 30 20 10 0 430
in
VDD=12.5V VGG=5V Pin=50mW Pout
80 70 50 40 30 20 10 0 530 TOTAL EFFICIENCY T(%) 60 HARMONICS (dBc)
-20 -30 -40 -50 -60 -70 430
2
nd
T
VDD=12.5V VGG=5V Pin=50mW
3rd
450 470 490 510 FREQUENCY f(MHz)
450 470 490 510 FREQUENCY f(MHz)
530
OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER
60 OUTPUT POWER Pout (dBm) POWER GAIN Gp(dB) 50 40 30 20 10 0 -15 -10 -5 0 5
IDD
f=440MHz, VDD=12.5V, VGG=5V Gp Pout
OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER
60 DRAIN CURRENT IDD(A) OUTPUT POWER Pout(dBm) POWER GAIN Gp(dB) 50 40 30 20 10 0 -15 -10 -5 0 5
IDD
f=470MHz, VDD=12.5V, VGG=5V Pout Gp
24 20 16 12 8 4 0
24 20 16 12 8 4 0 20 DRAIN CURRENT IDD(A) DRAIN CURRENT IDD(A)
10
15
20
10
15
INPUT POWER Pin(dBm)
INPUT POWER Pin(dBm)
OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER
60 OUTPUT POWER Pout(dBm) POWER GAIN Gp(dB) 50 40 30 20 10 0 -15 -10 -5 0 5
IDD
f=490MHz, VDD=12.5V, VGG=5V Gp Pout
OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER
60 DRAIN CURRENT IDD(A) OUTPUT POWER Pout(dBm) POWER GAIN Gp(dB) 50 40 30 20 10 0 -15 -10 -5 0 5
IDD
f=520MHz, VDD=12.5V, VGG=5V Gp Pout
24 20 16 12 8 4 0
24 20 16 12 8 4 0 DRAIN CURRENT IDD(A)
10
15
20
10
15
20
INPUT POWER Pin(dBm)
INPUT POWER Pin(dBm)
OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE
100 90 80 70 60 50 40 30 20 10 0 2 OUTPUT POWER Pout( W )
Pout
OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE
100 90 80 70 60 50 40 30 20 10 0 2 OUTPUT POWER Pout ( W )
f=470MHz, VGG=5V, Pin=50mW
DRAIN CURRENT IDD(A)
f=440MHz, VGG=5V, Pin=50mW
IDD
20 18 16 14 12 10 8 6 4 2 0 16
Pout
IDD
20 18 16 14 12 10 8 6 4 2 0 16
4
6 8 10 12 14 DRAIN VOLTAGE VDD(V)
4
6 8 10 12 14 DRAIN VOLTAGE VDD(V)
RA45H4452M
MITSUBISHI ELECTRIC 3/9
23 Dec 2002
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