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Details, datasheet, quote on part number: RD30HVF1
 
 
Part numberRD30HVF1
CategoryRF & Microwaves => VHF, UHF and 900MHz
TitleVHF, UHF and 900MHz
Description
CompanyMitsubishi Electronics America, Inc.
DatasheetDownload RD30HVF1 datasheet
Request For QuoteFind where to buy RD30HVF1
 


 
Specifications, Features, Applications

is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. OUTLINE DRAWING

FEATURES
APPLICATION
For output stage of high power amplifiers in VHF band Mobile radio sets.

SYMBOL VDSS VGSS Pch Pin Tj Tstg Rth-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input power Junction temperature Storage temperature Thermal resistance RATINGS UNIT +175 C C/W Junction to case 2.0 CONDITIONS

SYMBOL IDSS IGSS VTH Pout D PARAMETER Zero gate voltage drain current Gate to source leak current Gate threshold voltage Output power Drain efficiency Load VSWR tolerance CONDITIONS VDD=15.2V,Po=30W(PinControl) Idq=0.5A,Zg=50 Load VSWR=20:1(All Phase) MIN 30 55 LIMITS TYP MAX. No destroy UNIT uA

Note : Above parameters , ratings , limits and conditions are subject to change.





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