|Category||RF & Microwaves => VHF, UHF and 900MHz|
|Title||VHF, UHF and 900MHz|
|Company||Mitsubishi Electronics America, Inc.|
|Datasheet||Download RD30HVF1 datasheet
is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. OUTLINE DRAWINGFEATURES
For output stage of high power amplifiers in VHF band Mobile radio sets.
SYMBOL VDSS VGSS Pch Pin Tj Tstg Rth-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input power Junction temperature Storage temperature Thermal resistance RATINGS UNIT +175 °C °C/W Junction to case 2.0 CONDITIONS
SYMBOL IDSS IGSS VTH Pout D PARAMETER Zero gate voltage drain current Gate to source leak current Gate threshold voltage Output power Drain efficiency Load VSWR tolerance CONDITIONS VDD=15.2V,Po=30W(PinControl) Idq=0.5A,Zg=50 Load VSWR=20:1(All Phase) MIN 30 55 LIMITS TYP MAX. No destroy UNIT uANote : Above parameters , ratings , limits and conditions are subject to change.
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