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Part: RD70HHF1
Category:
RF & Microwaves
-> VHF, UHF and 900MHz
Description:
Company: Mitsubishi Electronics America, Inc.
Datasheet: Download RD70HHF1 datasheet File size : 735 kB
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Datasheet text preview:
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD70HHF1
25.0+/-0.3 7.0+/-0.5 11.0+/-0.3
Silicon MOSFET Power Transistor 30MHz,70W DESCRIPTION
RD70HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications. OUTLINE DRAWING
1
24.0+/-0.6
4-C2
·High power and High Gain: Pout>70W, Gp>13dB @Vdd=12.5V,f=30MHz ·High Efficiency: 60%typ.on HF Band
2 3
10.0+/-0.3
FEATURES
R1.6+/-0.15
0.1 -0.01
+0.05
APPLICATION
For output stage of high power amplifiers in HF Band mobile radio sets.
5.0+/-0.3
4.5+/-0.7 6.2+/-0.7
18.0+/-0.3
3.3+/-0.2
PIN 1.Drain 2.Source 3.Gate UNIT:mm
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL VDSS VGSS Pch Tj Tstg Rth-c PARAMETER Drain tosource voltage Gateto source voltage Channel dissipation Junction Temperature Storage temperature Thermal resistance CONDITIONS RATINGS 50 +/-20 150 175 -40 to +175 1.0 UNIT V V W
°C °C °C/W
Tc=25°C
Junction to case
Note 1: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25deg.C , UNLESS OTHERWISE NOTED)
SYMBOL IDSS IGSS VTH Pout D PARAMETER Zerogate voltage drain current Gate to source leak current Gate threshold voltage Output power Drain efficiency Load VSWR tolerance CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA f=30MHz ,VDD=12.5V Pin=3.5W,Idq=1.0A VDD=15.2V,Po=70W(PinControl) Idq=1.0A,Zg=50 Load VSWR=20:1(All Phase) MIN 1 70 55 LIMITS TYP MAX. 10 1 5 80 60 No destroy UNIT uA uA V W % -
Note : Above parameters , ratings , limits and conditions are subject to change.
RD70HHF1
MITSUBISHI ELECTRIC
1/7
REV.1 14 May. 2003
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD70HHF1
Vgs-Ids CHARACTERISTICS 10 8 6 4 2 0
Ta=+25°C Vds=10V
Silicon MOSFET Power Transistor 30MHz,70W TYPICAL CHARACTERISTICS
DRAIN DISSIPATION VS. AMBIENT TEMPERATURE
200 CHANNEL DISSIPATION Pch(W) 160
80 40 0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(°C)
Ids(A)
120
0
1
2
3 4 Vgs(V)
5
6
7
Vds-Ids CHARACTERISTICS 10
Ta=+25°C
Vds VS. Ciss CHARACTERISTICS 300
Vgs=6V Vgs=5.7V Vgs=5.4V Ta=+25°C f=1MHz
8 6 4 2 0 0 2 4 6 Vds(V) 8 10
250 200 Ciss(pF) 150 100 50 0 0
Ids(A)
Vgs=5.1V Vgs=4.8V Vgs=4.5V Vgs=4.2V
10 Vds(V)
20
30
Vds VS. Coss CHARACTERISTICS 500 400 Coss(pF) 300 200 100 0 0 10 Vds(V) 20 30
Ta=+25°C f=1MHz
Vds VS. Crss CHARACTERISTICS 40
Ta=+25°C f=1MHz
30 Crss(pF)
20
10
0 0 10 Vds(V) 20 30
RD70HHF1
MITSUBISHI ELECTRIC
2/7
REV.1 14 May. 2003
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD70HHF1
Pin-Po CHARACTERISTICS
Silicon MOSFET Power Transistor 30MHz,70W TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS 50 Po(dBm) , Gp(dB) , Idd(A) 40 30 20 10
Ta=+25°C f=30MHz Vdd=12.5V Idq=1A Gp Po
100 Pout(W) , Idd(A) 80
100 80 60 40 20 0 0 1
Po
100
d
80 60 d(%)
60 40 20 0
d(%)
Idd
Ta=25°C f=30MHz Vdd=12.5V Idq=1A
40 20 0
0 0 10 20 Pin(dBm) 30
2 3 Pin(W )
4
Vdd-Po CHARACTERISTICS 120 100 80 Po(W) 60 40 20 0 2 4 6 8 10 Vdd(V) 12 14
Ta=25°C f=30MHz Pin=3.5W Idq=1A Zg=ZI=50 ohm Po
Vgs-Ids CHARACTERISTICS 2 +25°C 30 25 20 Idd(A) 10 8 6 4 2 0 0 1 2 3 4 Vgs(V) 5 6 7
Vds=10V Tc=-25~+75°C
Idd
15 10 5 0
Ids(A)
+75°C
-25°C
RD70HHF1
MITSUBISHI ELECTRIC
3/7
REV.1 14 May. 2003
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