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Details, datasheet, quote on part number:RD70HVF1
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Datasheet text preview:
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD70HVF1
25.0+/-0.3 7.0+/-0.5 11.0+/-0.3
Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W DESCRIPTION
RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applications. OUTLINE DRAWING
1
4-C2
FEATURES
·High power and High Gain: Pout>70W, Gp>10.6dB @Vdd=12.5V,f=175MHz Pout>50W, Gp>7.0dB @Vdd=12.5V,f=520MHz ·High Efficiency: 60%typ.on VHF Band ·High Efficiency: 55%typ.on UHF Band
24.0+/-0.6 10.0+/-0.3
2 3
5.0+/-0.3
R1.6+/-0.15
0.1 -0.01
+0.05
4.5+/-0.7 6.2+/-0.7
APPLICATION
For output stage of high power amplifiers in VHF/UHF Band mobile radio sets.
18.0+/-0.3
3.3+/-0.2
PIN 1.Drain 2.Source 3.Gate UNIT:mm
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL VDSS VGSS Pch Tj Tstg Rth-c PARAMETER Drain tosource voltage Gateto source voltage Channel dissipation Junction Temperature Storage temperature Thermal resistance CONDITIONS RATINGS 30 +/-20 150 175 -40 to +175 1.0 UNIT V V W
°C °C °C/W
Tc=25°C
Junction to case
Note 1: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25°C , UNLESS OTHERWISE NOTED)
SYMBOL IDSS IGSS VTH Pout D Pout D PARAMETER Zerogate voltage drain current Gate to source leak current Gate threshold voltage Output power Drain efficiency Output power Drain efficiency Load VSWR tolerance CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA f=175MHz ,VDD=12.5V Pin=6W, Idq=2.0A f=520MHz ,VDD=12.5V Pin=10W, Idq=2.0A VDD=15.2V,Po=70W(PinControl) f=175MHz,Idq=2.0A,Zg=50 LoadVSWR=20:1(All phase) VDD=15.2V,Po=50W(PinControl) f=520MHz,Idq=2.0A,Zg=50 Load VSWR=20:1(All phase) LIMITS MIN TYP MAX. 300 1 1.3 1.8 2.3 70 75 55 60 50 55 50 55 No destroy UNIT uA uA V W % W % -
Load VSWR tolerance
No destroy
-
Note : Above parameters , ratings , limits and conditions are subject to change.
RD70HVF1
MITSUBISHI ELECTRIC
1/8
REV.1 14 May. 2003
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD70HVF1
Vgs-Ids CHARACTERISTICS 10 8 6 4 2 0
Ta=+25°C Vds=10V
Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W TYPICAL CHARACTERISTICS
CHANNNEL DISSIPATION VS. AMBIENT TEMPERATURE
160 CHANNEL DISSIPATION Pch(W) 140 120
80 60 40 20 0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(°C)
Ids(A) Vds-Ids CHARACTERISTICS
Ta=+25°C Vgs=3.7V
100
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Vgs(V)
Vds VS. Ciss CHARACTERISTICS 350 300 250 Ciss(pF)
Ta=+25°C f=1MHz
10 8 6 4 2 0 0 2 4 6 Vds(V) 8 10
Ids(A)
Vgs=3.4V
200 150 100
Vgs=3.1V
Vgs=2.8V Vgs=2.5V Vgs=2.2V
50 0 0 5 10 Vds(V) 15 20
Vds VS. Coss CHARACTERISTICS 300 250 Coss(pF) 200 150 100 50 0 0 5 10 Vds(V) 15 20
Ta=+25°C f=1MHz
Vds VS. Crss CHARACTERISTICS 30 25 20 Crss(pF) 15 10 5 0 0 5 10 Vds(V) 15 20
Ta=+25°C f=1MHz
RD70HVF1
MITSUBISHI ELECTRIC
2/8
REV.1 14 May. 2003
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD70HVF1
Pin-Po CHARACTERISTICS @f=175MHz
Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS @f=175MHz 50 Po(dBm) , Gp(dB) , Idd(A) 40 30
Gp Ta=+25°C f=175MHz Vdd=12.5V Idq=2A
100
Po
100
Po
100 Pout(W) , Idd(A) 80 60 40 20
80
d
80 d(%) Idd(A) d(%) 60
Ta=25°C f=175MHz Vdd=12.5V Idq=2A
d(%)
60 40 20 0 0 2 4 6 Pin(W ) 8 10
Idd
20 10 0 10 20 30 Pin(dBm) 40
40 20 0
0
Pin-Po CHARACTERISTICS @f=520MHz 50 Po(dBm) , Gp(dB) , Idd(A) 40 30 20
Gp Ta=+25°C f=520MHz Vdd=12.5V Idq=2A
Pin-Po CHARACTERISTICS @f=520MHz 100 70 60 Pout(W) , Idd(A) 50 40 30 20 10 0 0 5 10 15 Pin(W ) 20 25
Idd Ta=25°C f=520MHz Vdd=12.5V Idq=2A Po d
70 60 50 40 30 20 10 0
Po
80
40
10 0 10 20 30 Pin(dBm)
20 0
40
Vdd-Po CHARACTERISTICS @f=175MHz 100 80 Po(W) 60 40 20 0 4 6 8 10 Vdd(V) 12 14
Ta=25°C f=175MHz Pin=6W Idq=2A Zg=ZI=50 ohm Po
d(%)
60
Vdd-Po CHARACTERISTICS @f=520MHz 20 18 16 14 12 10 8 6 4 2 0 70 60 50 Idd(A) Po(W) 40 30 20 10 4 6 8 10 Vdd(V) 12 14
Ta=25°C f=520MHz Pin=10W Idq=2A Zg=ZI=50 ohm Po
12 10 8
Idd
Idd
6 4 2 0
RD70HVF1
MITSUBISHI ELECTRIC
3/8
REV.1 14 May. 2003
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