Details, datasheet, quote on part number: 2N3789
Part2N3789
CategoryDiscrete => Transistors => Bipolar => Power => General Purpose => PNP
DescriptionIC(A) = 10, VCBO(V) = 60, VCEO(V) = 60, PD(W) = 150, Package = TO-3, HFE(Min/Max) = 25/90, IC/VCE(A/V) = 1.0/2.0, VCE(SAT)(V) = 1.0, ic / IB(A/mA) = 4.0/400
CompanyMospec Semiconductor Corporation
DatasheetDownload 2N3789 datasheet
Cross ref.Similar parts: BDW52C
Quote
Find where to buy
 
  
Related products with the same datasheet
2N3790
2N3791
2N3792
Some Part number from the same manufacture Mospec Semiconductor Corporation
2N3790 IC(A) = 10, VCBO(V) = 60, VCEO(V) = 60, PD(W) = 150, Package = TO-3, HFE(Min/Max) = 25/90, IC/VCE(A/V) = 1.0/2.0, VCE(SAT)(V) = 1.0, ic / IB(A/mA) = 4.0/400
2N3878 IC(A) = 7, VCBO(V) = 120, VCEO(V) = 50, PD(W) = 35, Package = TO-66, HFE(Min/Max) = 20, IC/VCE(A/V) = 4.0/5.0, VCE(SAT)(V) = 2.0, ic / IB(A/mA) = 4.0/400
2N3879 IC(A) = 7, VCBO(V) = 120, VCEO(V) = 75, PD(W) = 35, Package = TO-66, HFE(Min/Max) = 20/80, IC/VCE(A/V) = 4.0/5.0, VCE(SAT)(V) = 1.2, ic / IB(A/mA) = 4.0/400
2N3902 IC(A) = 3.5, VCBO(V) = 700, VCEO(V) = 400, PD(W) = 100, Package = TO-3, HFE(Min/Max) = 30/90, IC/VCE(A/V) = 1.0/5.0, VCE(SAT)(V) = 0.8, ic / IB(A/mA) = 1.0/100
2N4231A IC(A) = 5, VCBO(V) = 40, VCEO(V) = 40, PD(W) = 75, Package = TO-66, HFE(Min/Max) = 25/100, IC/VCE(A/V) = 1.5/2.0, VCE(SAT)(V) = 0.7, ic / IB(A/mA) = 1.5/150
2N4240 IC(A) = 1, VCBO(V) = 250, VCEO(V) = 175, PD(W) = 25, Package = TO-66, HFE(Min/Max) = 40/200, IC/VCE(A/V) = 0.5/10, VCE(SAT)(V) = 5.0, ic / IB(A/mA) = 1.0/125
2N4347 IC(A) = 10, VCBO(V) = 160, VCEO(V) = 140, PD(W) = 117, Package = TO-3, HFE(Min/Max) = 20/70, IC/VCE(A/V) = 3.0/4.0, VCE(SAT)(V) = 5.0, ic / IB(A/mA) = 10/2A
2N4398 IC(A) = 30, VCBO(V) = 40, VCEO(V) = 40, PD(W) = 200, Package = TO-3, HFE(Min/Max) = 15/60, IC/VCE(A/V) = 15/2.0, VCE(SAT)(V) = 1.0, ic / IB(A/mA) = 15/1.5A
2N4898 IC(A) = 1, VCBO(V) = 40, VCEO(V) = 40, PD(W) = 25, Package = TO-66, HFE(Min/Max) = 20/100, IC/VCE(A/V) = 0.5/1.0, VCE(SAT)(V) = 0.6, ic / IB(A/mA) = 1.0/100
2N4901 IC(A) = 5, VCBO(V) = 40, VCEO(V) = 40, PD(W) = 87.5, Package = TO-3, HFE(Min/Max) = 20/80, IC/VCE(A/V) = 1.0/2.0, VCE(SAT)(V) = 1.5, ic / IB(A/mA) = 5.0/1A
2N4904
2N4905 IC(A) = 5, VCBO(V) = 60, VCEO(V) = 60, PD(W) = 87.5, Package = TO-3, HFE(Min/Max) = 25/100, IC/VCE(A/V) = 2.5/2.0, VCE(SAT)(V) = 1.5, ic / IB(A/mA) = 5.0/1A
2N4906 IC(A) = 5, VCBO(V) = 80, VCEO(V) = 80, PD(W) = 87.5, Package = TO-3, HFE(Min/Max) = 25/100, IC/VCE(A/V) = 2.5/2.0, VCE(SAT)(V) = 1.5, ic / IB(A/mA) = 5.0/1A
2N4912 IC(A) = 1, VCBO(V) = 80, VCEO(V) = 80, PD(W) = 25, Package = TO-66, HFE(Min/Max) = 20/100, IC/VCE(A/V) = 0.5/1.0, VCE(SAT)(V) = 0.6, ic / IB(A/mA) = 1.0/100
2N4913 IC(A) = 5, VCBO(V) = 40, VCEO(V) = 40, PD(W) = 87.5, Package = TO-3, HFE(Min/Max) = 25/100, IC/VCE(A/V) = 2.5/2.0, VCE(SAT)(V) = 1.5, ic / IB(A/mA) = 5.0/1A
2N4914 IC(A) = 5, VCBO(V) = 60, VCEO(V) = 60, PD(W) = 87.5, Package = TO-3, HFE(Min/Max) = 25/100, IC/VCE(A/V) = 2.5/2.0, VCE(SAT)(V) = 1.5, ic / IB(A/mA) = 5.0/1A
2N4915 IC(A) = 5, VCBO(V) = 80, VCEO(V) = 80, PD(W) = 87.5, Package = TO-3, HFE(Min/Max) = 25/100, IC/VCE(A/V) = 2.5/2.0, VCE(SAT)(V) = 1.5, ic / IB(A/mA) = 5.0/1A
2N5038 IC(A) = 20, VCBO(V) = 150, VCEO(V) = 150, PD(W) = 140, Package = TO-3, HFE(Min/Max) = 20/100, IC/VCE(A/V) = 12/5.0, VCE(SAT)(V) = 2.5, ic / IB(A/mA) = 20/5A
2N5050 IC(A) = 2, VCBO(V) = 125, VCEO(V) = 125, PD(W) = 40, Package = TO-220, HFE(Min/Max) = 25/100, IC/VCE(A/V) = 0.75/5.0, VCE(SAT)(V) = 1.0, ic / IB(A/mA) = 0.75/100
2N5051 IC(A) = 2, VCBO(V) = 150, VCEO(V) = 150, PD(W) = 40, Package = TO-66, HFE(Min/Max) = 25/100, IC/VCE(A/V) = 0.75/5.0, VCE(SAT)(V) = 1.0, ic / IB(A/mA) = 0.75/100
2N5052 IC(A) = 2, VCBO(V) = 200, VCEO(V) = 200, PD(W) = 40, Package = TO-66, HFE(Min/Max) = 25/100, IC/VCE(A/V) = 0.75/5.0, VCE(SAT)(V) = 1.0, ic / IB(A/mA) = 0.75/100
Same catergory

2N3904-T18 : Screening Options Available = ;; Polarity = NPN ;; Package = TO18 (TO206AA) ;; Vceo = 40V ;; IC(cont) = 0.2A ;; HFE(min) = 100 ;; HFE(max) = - ;; @ Vce/ic = 10V / 1mA ;; FT = 300MHz ;; PD = 0.31W.

2SB1322A : VCEO(V) = -50 ;; IC(A) = -1 ;; HFE(min) = 85 ;; HFE(max) = 340 ;; Package = MT-2-A1.

2SC5729 : . ! 1) High speed switching. (Tf : Typ. 500mA) 2) Low saturation voltage, typically (Typ. 10mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2047 !External dimensions (Units : mm) !Applications Small signal low frequency amplifier High speed switching Package Type Code Basic ordering unit (pieces) 2SC5729 Taping.

BDS10 : Screening Options Available = ;; Polarity = NPN ;; Package = TO257AB (TO220M) ;; Vceo = 60V ;; IC(cont) = 15A ;; HFE(min) = 40 ;; HFE(max) = 250 ;; @ Vce/ic = 4V / 500mA ;; FT = 3MHz ;; PD = 90W.

CV7631-O : Screening Options Available = ;; Polarity = PNP ;; Package = TO39 (TO205AD) ;; Vceo = 25V ;; IC(cont) = 0.5A ;; HFE(min) = 30 ;; HFE(max) = 130 ;; @ Vce/ic = 1V / 50mA ;; FT = 100MHz ;; PD = 0.8W.

H5783Series : PMT Modules.

MIP512 : For Lamp and Solenoid Driver. VIN(V) = -0.5 to 6.0 ;; VDS(V) = 45 ;; IO(A) = 2.0 ;; Package = MT-2-A1.

PDTA124XE : SOT/Surface Mount. PNP Resistor-equipped Transistor. Built-in bias resistors R1 and R2 (typ. 22 k and 47 k respectively) Simplification of circuit design Reduces number of components and board space. APPLICATIONS Especially suitable for space reduction in interface and driver circuits Inverter circuit configurations without use of external resistors. PNP resistor-equipped transistor SC-75 (SOT416) plastic.

PP900D120 : IGBT Assemblies (POW-R-PAK). Voltage = 600V ;; Current = 900A ;; Circuit Configuration = Half Bridge.

STGD7NB60H-1 : N-channel 7A - 600V Ipak Powermesh Igbt. HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat) LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION OFF LOSSES INCLUDE TAIL CURRENT THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX"-1") IPAK TO-251 (Suffix "-1") Using the latest high voltage technology based on a patented strip layout, STMicroelectronics.

TIP115 : 60 V, Complementary PNP Silicon Power Transistor.

FM01393MS : 1 ELEMENT, 8000 uH, AMORPHOUS MAGNETIC-CORE, GENERAL PURPOSE INDUCTOR. s: Devices in Package: 1 ; Core Material: AMORPHOUS MAGNETIC ; Lead Style: Radial, WIRE ; Application: General Purpose ; Inductance Range: 8000 microH ; DCR: 0.3500 ohms ; Rated DC Current: 1000 milliamps ; Testing Frequency: 100 kHz.

FUR1620CT : 16 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB. s: Arrangement: Common Catode ; Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier, ULTRA FAST RECOVERY ; IF: 16000 mA ; RoHS Compliant: RoHS ; Package: PLASTIC PACKAGE-3 ; Pin Count: 3 ; Number of Diodes: 2.

Q8008VH3RP : 800 V, 8 A, ALTERNISTOR TRIAC, TO-251AA. s: Thyristor Type: Triac, ALTERNISTOR TRIAC ; Package Type: VPAK-3 ; Pin Count: 3 ; VDRM: 800 volts ; IT(RMS): 8 amps ; Standards and Certifications: RoHS.

UPA508TE-A : 2000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 20 volts ; rDS(on): 0.0900 ohms ; Package Type: MINIMOLD, SC-95, 6 PIN ; Number of units in IC: 1.

WSN0002R7000FBA : RESISTOR, WIRE WOUND, 2 W, 1 %, 90 ppm, 0.7 ohm, SURFACE MOUNT, 4527. s: Category / Application: General Use ; Technology / Construction: Wirewound ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), CHIP ; Resistance Range: 0.7000 ohms ; Tolerance: 1 +/- % ; Temperature Coefficient: 90 ±ppm/°C ; Power Rating: 2 watts (0.0027 HP) ; Operating.

239073551372 : RESISTOR, METAL GLAZE/THICK FILM, 0.5 W, 1 %, 100 ppm, 1370 ohm, SURFACE MOUNT, 1210. s: Category / Application: General Use ; Technology / Construction: Thick Film (Chip) ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), CHIP, ROHS COMPLIANT ; Resistance Range: 1370 ohms ; Tolerance: 1 +/- % ; Temperature Coefficient: 100 ±ppm/°C ; Power.

33ZRD10 : RESISTOR, VOLTAGE DEPENDENT, 26 V, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Mounting / Packaging: ThroughHole ; Operating DC Voltage: 26 volts.

 
0-C     D-L     M-R     S-Z