|
Details, datasheet, quote on part number:1PMT5916BT3
| |
Datasheet text preview:
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 1PMT5913BT3/D
Product Preview
2.5 Watt Plastic Surface Mount Silicon Zener Diodes Power mite® Package
This complete new line of zener/tvs diodes offers a 2.5 watt series in a micro miniature, space saving surface mount package. The Powermite zener/tvs diodes are designed for use as a tvs or a regulation device in automotive and telecommunication applications where efficiency, low leakage, size/height and profile are important. Features: · Voltage Range 3.3 to 91 V · ESD Rating of Class 3 (> 16 kV) per Human Body Model · Low Profile maximum height of 1.1mm · Integral Heat Sink/Locking Tabs · Full metallic bottom eliminates flux entrapment · Small Footprint Footprint area of 8.45mm2 · Supplied in 12mm tape and reel 12,000 units per reel · Powermite is JEDEC Registered as DO216AA
1
1PMT5913BT3 through 1PMT5948BT3
PLASTIC SURFACE MOUNT ZENER DIODES 2.5 WATTS 3.391 VOLTS
1
2 CASE 45701 PLASTIC
2 1: CATHODE 2: ANODE
MAXIMUM RATINGS
Rating DC Power Dissipation @ TL = 75°C, Measured at Zero Lead Length Derate above 75°C DC Power Dissipation @ TA = 25°C(1) Derate above 25°C Thermal Resistance from Junction to Lead Thermal Resistance from Junction to Ambient Operating and Storage Junction Temperature Range Typical Ppk Dissipation @ TL < 25°C, (PW10/1000 µs per Figure 8)(2) Typical Ppk Dissipation @ TL < 25°C, (PW8/20 µs per Figure 9)(2) Symbol °PD° °PD° RJL RJA TJ, Tstg Ppk Ppk Value 2.5 40 380 2.8 26 324 65 to +150 200 1000 Unit °Watts° mW/°C °mW mW/°C °C/W °C/W °C Watts Watts
(1)FR4 Board, within 1" to device, using Motorola minimum recommended footprint, as shown in case 403A outline dimensions spec. (2)Nonrepetitive current pulse.
This document contains preview information only and is subject to change without notice.
Powermite is a registered trademark of Microsemi Corporation. Thermal Clad is a trademark of the Bergquist Company.
© Motorola, Inc. 1996
1PMT5913BT3 through 1PMT5948BT3
MOTOROLA 1
ELECTRICAL CHARACTERISTICS (VF = 1.5 Volts Max @ IF = 200 mAdc for all types.)
Nominal Zener Voltage VZ @ IZT Volts (Note 1) 3.3 3.6 3.9 4.3 Test Current IZT mA 113.6 104.2 96.1 87.2 Max Zener Impedance (Note 2) ZZT @ IZT Ohms 10 9 7.5 6 ZZK Ohms 500 500 500 500 @ IZK mA 1 1 1 1 Max Reverse Leakage Current IR µA 100 75 25 5 @ VR Volts 1 1 1 1 Maximum DC Zener Current IZM mAdc 454 416 384 348
Device* 1PMT5913BT3 1PMT5914BT3 1PMT5915BT3 1PMT5916BT3
Device Marking 913B 914B 915B 916B
1PMT5917BT3 1PMT5918BT3 1PMT5919BT3 1PMT5920BT3
1PMT5921BT3 1PMT5922BT3 1PMT5923BT3 1PMT5924BT3
4.7 5.1 5.6 6.2
6.8 7.5 8.2 9.1
79.8 73.5 66.9 60.5
55.1 50 45.7 41.2
5 4 2 2
2.5 3 3.5 4
500 350 250 200
200 400 400 500
1 1 1 1
1 0.5 0.5 0.5
5 5 5 5
5 5 5 5
1.5 2 3 4
5.2 6.8 6.5 7
319 294 267 241
220 200 182 164
917B 918B 919B 920B
921B 922B 923B 924B
1PMT5925BT3 1PMT5926BT3 1PMT5927BT3 1PMT5928BT3 1PMT5929BT3 1PMT5930BT3 1PMT5931BT3 1PMT5932BT3
1PMT5933BT3 1PMT5934BT3 1PMT5935BT3 1PMT5936BT3 1PMT5937BT3 1PMT5938BT3 1PMT5939BT3 1PMT5940BT3 1PMT5941BT3 1PMT5942BT3 1PMT5943BT3 1PMT5944BT3 1PMT5945BT3 1PMT5946BT3 1PMT5947BT3 1PMT5948BT3
10 11 12 13 15 16 18 20
22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91
37.5 34.1 31.2 28.8 25 23.4 20.8 18.7
17 15.6 13.9 12.5 11.4 10.4 9.6 8.7 8 7.3 6.7 6 5.5 5 4.6 4.1
4.5 5.5 6.5 7 9 10 12 14
17.5 19 23 26 33 38 45 53 67 70 86 100 120 140 160 200
500 550 550 550 600 600 650 650
650 700 700 750 800 850 900 950 1000 1100 1300 1500 1700 2000 2500 3000
0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25
0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25
5 1 1 1 1 1 1 1
1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1
8 8.4 9.1 9.9 11.4 12.2 13.7 15.2
16.7 18.2 20.6 22.8 25.1 27.4 29.7 32.7 35.8 38.8 42.6 47.1 51.7 56 62.2 69.2
150 136 125 115 100 93 83 75
68 62 55 50 45 41 38 34 31 29 26 24 22 20 18 16
925B 926B 927B 928B 929B 930B 931B 932B
933B 934B 935B 936B 937B 938B 939B 940B 941B 942B 943B 944B 945B 946B 947B 948B
* TOLERANCE AND VOLTAGE DESIGNATION
Tolerance designation -- The type numbers listed indicate a tolerance of ±5%.
Devices listed in bold, italic are Motorola preferred devices.
MOTOROLA 2
1PMT5913BT3 through 1PMT5948BT3
TYPICAL CHARACTERISTICS
P D, MAXIMUM POWER DISSIPATION (WATTS) 6 5 4 3 2 1 TA 0 0 25 50 75 100 125 150 T, TEMPERATURE (°C) TL 1000 PPK , PEAK SURGE POWER (WATTS) RECTANGULAR NONREPETITIVE WAVEFORM
100
10 0.1
1 10 PW, PULSE WIDTH (ms)
100
Figure 1. Steady State Power Derating
Figure 2. Maximum Surge Power
10 Ippm, PEAK PULSE CURRENT (%) NONREPETITIVE EXPONENTIAL PULSE WAVEFORM TJ = 25°C 1
120 = 10 µs 100 80 60 40 20 0 PEAK VALUE Ippm TA = 25°C PW (ID) IS DEFINED AS THE POINT WHERE THE PEAK CURRENT DECAYS TO 50% OF Ipp.
PPK , PEAK POWER (kW)
HALF VALUE Ipp/2 10/1000 µs WAVEFORM AS DEFINED BY R.E.A. td 0 1 2 3 t, TIME (ms) 4 5
0.1 0.001
0.01
0.1 Tp, PULSE WIDTH (ms)
1
10
Figure 3. Maximum Surge Power
VZ , TEMPERATURE COEFFICIENT (mV/ °C) 10 8 6 4 2 0 2 4 VZ @ IZT 200
Figure 4. Pulse Waveform 10/1000
VZ , TEMPERATURE COEFFICIENT (mV/ °C)
100 70 50 30 20
VZ @ IZT
2
4
6 8 VZ, ZENER VOLTAGE (VOLTS)
10
12
10 10
20
30 50 70 100 VZ, ZENER VOLTAGE (VOLTS)
200
Figure 5. Zener Voltage To 12 Volts
Figure 6. Zener Voltage 14 To 200 Volts
NOTE 1. ZENER VOLTAGE (VZ) MEASUREMENT Nominal zener voltage is measured with the device junction in thermal equilibrium with ambient temperature at 25°C
1PMT5913BT3 through 1PMT5948BT3
MOTOROLA 3
100 50 30 20 10 5 3 2 1 0.5 0.3 0.2 0.1 0 1 2 3 4 5 6 7 VZ, ZENER VOLTAGE (VOLTS) 8 9 10
100 50 30 20 10 5 3 2 1 0.5 0.3 0.2 0.1 0 10 20 30 40 50 60 70 80 VZ, ZENER VOLTAGE (VOLTS) 90 100
Figure 7. VZ = 3.3 thru 10 Volts
200 IZ(dc) = 1mA ZZ , DYNAMIC IMPEDANCE (OHMS) ZZ , DYNAMIC IMPEDANCE (OHMS) 100 70 50 30 20 10 7 5 3 2 10mA 1k 500 200 100 50 20 10 5 2 1 0.5 1 2
IZ , ZENER CURRENT (mA)
IZ, ZENER CURRENT (mA)
Figure 8. VZ = 12 thru 82 Volts
TJ = 25°C iZ(rms) = 0.1 IZ(dc) VZ =150V 91V 62V
22V 12V 5 10 20 50 100 IZ, ZENER TEST CURRENT (mA) 200 6.8V 500
20mA 5 7 10
iZ(rms) = 0.1 IZ(dc) 20 30 50 VZ, ZENER VOLTAGE (VOLTS) 70 100
Figure 9. Effect of Zener Voltage
Figure 10. Effect of Zener Current
NOTE 2. ZENER IMPEDANCE (ZZ) DERIVATION ZZT and ZZK are measured by dividing the ac voltage drop across the device by the ac current applied. The specified limits are for IZ(ac) = 0.1 IZ(dc) with the ac frequency = 60 Hz.
MOTOROLA 4
1PMT5913BT3 through 1PMT5948BT3
INFORMATION FOR USING THE POWERMITE SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must b e the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process.
0.025 0.635 0.030 0.762
0.105 2.67
0.100 2.54
0.050 1.27
inches mm
POWERMITE POWERMITE POWER DISSIPATION
The power dissipation of the Powermite is a function of the drain pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by T J(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to a m b i e n t , and the operating temperature, TA . Using the v a l u e s provided on the data sheet for the Powermite package, PD can be calculated as follows: PD = TJ(max) TA R J A
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. · Always preheat the device. · The delta temperature between the preheat and soldering should be 100°C or less.* · When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C. · The soldering temperature and time shall not exceed 260°C for more than 10 seconds. · When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less. · After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. · Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.
The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 386 milliwatts. PD = 150°C 25°C 324°C/W = 386 milliwatts
The 324°C/W for the Powermite package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 386 milliwatts. There are other alternatives to achieving higher power dissipation from the Powermite package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal CladTM. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint.
1PMT5913BT3 through 1PMT5948BT3
MOTOROLA 5
|
|
