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Part: MAC16N
Category:
Discrete
-> Thyristors
-> Triacs
Description: -
Company: Motorola Semiconductor Products
Datasheet: Download MAC16N datasheet File size : 886 kB
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
*Motorola preferred devices
MAC16 SERIES*
TRIACS
Silicon Bidirectional Thyristors
Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. · Blocking Voltage to 800 Volts · On-State Current Rating of 15 Amperes RMS at 80°C · Uniform Gate Trigger Currents in Three Modes · High Immunity to dv/dt -- 500 V/µs minimum at 125°C · Minimizes Snubber Networks for Protection · Industry Standard TO-220AB Package · High Commutating di/dt -- 9.0 A/ms minimum at 125°C
TRIACS 15 AMPERES RMS 400 thru 800 VOLTS
MT2
MT1 MT2 G
CASE 221A-06 (TO-220AB) Style 4
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol VDRM Parameter Peak Repetitive Off-State Voltage, (1) ( 40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) MAC16D MAC16M MAC16N Value 400 600 800 15 150 93 20 0.5 40 to +125 40 to +150 A A A2sec Watts Watts °C °C Unit Volts
IT(RMS) ITSM I2t PGM PG(AV) TJ Tstg
On-State RMS Current (60 Hz, TC = 80°C) Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, TJ = 125°C) Circuit Fusing Consideration (t = 8.3 ms) Peak Gate Power (Pulse Width 1.0 µs, TC = 80°C) Average Gate Power (t = 8.3 ms, TC = 80°C) Operating Junction Temperature Range Storage Temperature Range
THERMAL CHARACTERISTICS
RJC RJA TL Thermal Resistance -- Junction to Case Thermal Resistance -- Junction to Ambient Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds 2.0 62.5 260 °C/W °C
(1) VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola Thyristor Device Data
367
MAC16 SERIES
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol Characteristic Min Typ Max Unit
OFF CHARACTERISTICS
IDRM Peak Repetitive Blocking Current (VD = Rated VDRM, Gate Open) mA TJ = 25°C TJ = 125°C -- -- -- -- 0.01 2.0
ON CHARACTERISTICS
VTM IGT Peak On-State Voltage* (ITM = ± 21 A Peak) Continuous Gate Trigger Current (VD = 12 V, RL = 100 ) MT2(+), G(+) MT2(+), G() MT2(), G() Hold Current (VD = 12 V, Gate Open, Initiating Current = ±150 mA) Latch Current (VD = 24 V, IG = 50 mA) MT2(+), G(+) MT2(+), G() MT2(), G() Gate Trigger Voltage (VD = 12 V, RL = 100 ) MT2(+), G(+) MT2(+), G() MT2(), G() Volts -- 10 10 10 -- -- -- -- 0.5 0.5 0.5 1.2 16 18 22 20 33 36 33 0.75 0.72 0.82 1.6 mA 50 50 50 mA 50 mA 50 80 50 Volts 1.5 1.5 1.5
IH IL
VGT
DYNAMIC CHARACTERISTICS
(di/dt)c Rate of Change of Commutating Current* See Figure 10. (VD = 400 V, ITM = 6.0 A, Commutating dv/dt = 24 V/µs, Gate Open, TJ = 125°C, f = 250 Hz, No Snubber) 9.0 CL = 10 µF LL = 40 mH 500 -- -- V/µs -- -- A/ms
dv/dt
Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
*Indicates Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%. 125 PAV, AVERAGE POWER (WATTS) 120 TC, CASE TEMPERATURE (°C) 115 110 105 100 95 90 85 80 0 2 6 8 10 12 IT(RMS), RMS ON-STATE CURRENT (AMP) 4 14 16 = 180° = 30 and 60° = 90° = 120° 20 18 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 IT(RMS), ON-STATE CURRENT (AMP) 14 16 = 30° DC
180° 120° 90° 60°
DC
Figure 1. RMS Current Derating
Figure 2. On-State Power Dissipation
368
Motorola Thyristor Device Data
MAC16 SERIES
100 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1
TYPICAL AT TJ = 25°C
MAXIMUM @ TJ = 125°C
0.1
I T, INSTANTANEOUS ON-STATE CURRENT (AMP)
10
0.01
0.1
1
10
100 t, TIME (ms)
1000
1 · 104
Figure 4. Thermal Response
MAXIMUM @ TJ = 25°C 1 I H, HOLD CURRENT (mA)
40
MT2 POSITIVE
MT2 NEGATIVE
0.1
0
0.5 1 1.5 2 2.5 3 3.5 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
4
5 40
10
20 50 80 TJ, JUNCTION TEMPERATURE (°C)
110 125
Figure 3. On-State Characteristics
Figure 5. Hold Current Variation
100 VGT, GATE TRIGGER VOLTAGE (VOLT) IGT, GATE TRIGGER CURRENT (mA)
1 OFF-STATE VOLTAGE = 12 V RL = 140
Q2
Q3 Q1
Q1 Q3 Q2
OFF-STATE VOLTAGE = 12 V RL = 140 1 40 10 20 50 80 TJ, JUNCTION TEMPERATURE (°C) 110 125
0.5 40
10
+20 50 80 TJ, JUNCTION TEMPERATURE (°C)
110
125
Figure 6. Gate Trigger Current Variation
Figure 7. Gate Trigger Voltage Variation 369
Motorola Thyristor Device Data
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