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Part: MAC210AFP
Category:
Description:
Company: Motorola Semiconductor Products
Datasheet: Download MAC210AFP datasheet File size : 886 kB
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Triacs
Silicon Bidirectional Thyristors
. . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. · Blocking Voltage to 800 Volts · All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability · Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability · Gate Triggering Guaranteed in Three Modes (MAC210 Series) or Four Modes (MAC210A Series)
MAC210 Series MAC210A Series
TRIACs 10 AMPERES RMS 200 thru 800 VOLTS
MT2 G
MT1
CASE 221A-04 (TO-220AB) STYLE 4
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating Repetitive Peak Off-State Voltage(1) (TJ = 40 to +125°C, 1/2 Sine Wave 50 to 60 Hz, Gate Open) Symbol VDRM MAC210-4, MAC210A4 MAC210-6, MAC210A6 MAC210-8, MAC210A8 MAC210-10, MAC210A10 IT(RMS) ITSM 200 400 600 800 10 100 Amps Amps Value Unit Volts
On-State Current RMS (TC = +70°C) Full Cycle Sine Wave 50 to 60 Hz Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, TC = +70°C) Preceded and followed by Rated Current Circuit Fusing Considerations (t = 8.3 ms) Peak Gate Power (TC = +70°C, Pulse Width = 10 µs) Average Gate Power (TC = +70°C, t = 8.3 ms) Peak Gate Current (TC = +70°C, Pulse Width = 10 µs) Operating Junction Temperature Range Storage Temperature Range
I2t PGM PG(AV) IGM TJ Tstg
40 20 0.35 2 40 to +125 40 to +125
A2s Watts Watt Amps °C °C
(1) VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Motorola Thyristor Device Data
375
MAC210 Series MAC210A Series
THERMAL CHARACTERISTICS
Characteristic T h e r m a l Resistance, Junction to Case Symbol RJC Max 2.2 Unit °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Peak Blocking Current (VD = Rated VDRM, Gate Open) TJ = 25°C TJ = +125°C Symbol IDRM -- -- -- -- 1.2 10 2 1.65 Min Typ Max Unit µA mA Volts mA -- -- -- -- VGT -- -- -- -- 0.9 0.9 1.1 1.4 2 2 2 2.5 12 12 20 35 50 50 50 75 volts
Peak On-State Voltage (Either Direction) (ITM = 14 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle Gate Trigger Current (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) MT2(+), G() MT2(), G() MT2(), G(+) "A" SUFFIX ONLY Gate Trigger Voltage (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) MT2(+), G() MT2(), G() MT2(), G(+) "A" SUFFIX ONLY (Main Terminal Voltage = Rated VDRM, RL = 10 k ohms, TJ = +125°C) MT2(+), G(+); MT2(), G(); MT2(+), G() MT2(), G(+) "A" SUFFIX ONLY Holding Current (Either Direction) (Main Terminal Voltage = 12 Vdc, Gate Open, Initiating Current = 500 mA, TC = +25°C) Turn-On Time (Rated VDRM, ITM = 14 A) (IGT = 120 mA, Rise Time = 0.1 µs, Pulse Width = 2 µs)
p 2%)
VTM IGT
--
0.2 0.2 IH --
-- -- 6
-- -- 50 mA
tgt
--
1.5
--
µs
Critical Rate of Rise of Commutation Voltage (VD = Rated VDRM, ITM = 14 A, Commutating di/dt = 5.0 A/ms, Gate Unenergized, TC = 70°C) Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Voltage Rise, Gate Open, TC = +70°C)
dv /dt(c )
--
5
--
V/µs
dv /dt
--
100
--
V/µs
376
Motorola Thyristor Device Data
MAC210 Series MAC210A Series
FIGURE 1 -- CURRENT DERATING
P (AV) , AVERAGE POWER DISSIPATION 130 CONDUCTION ANGLE = 360° TC, MAXIMUM ALLOWABLE CASE TEMPERATURE (° C) 120 110 100 90 80 70 60 0 1.0 3.0 4.0 5.0 6.0 7.0 8.0 IT(RMS), RMS ON-STATE CURRENT (AMPS) 2.0 9.0 10.0 14.0 CONDUCTION ANGLE = 360° 12.0 10.0 8.0 6.0 4.0 2.0 0 0 1.0 4.0 5.0 6.0 7.0 8.0 2.0 3.0 IT(RMS), RMS ON-STATE CURRENT (AMPS) 9.0 10.0
FIGURE 2 -- POWER DISSIPATION
FIGURE 3 -- MAXIMUM ON-STATE CHARACTERISTICS
100 IT, INSTANTANEOUS ON-STATE CURRENT (AMPS) 50
FIGURE 4 -- MAXIMUM NON-REPETITIVE SURGE CURRENT
100 ITSM , PEAK SURGE CURRENT (AMP) 80
20 10 5.0 TJ = 25°C TJ = 125°C
60 40 CYCLE TC = 70°C f = 60 Hz Surge is preceded and followed by rated current 2.0 3.0 NUMBER OF CYCLES 5.0 7.0 10
20
2.0 1.0 0.5 0.2
0
1.0
FIGURE 5 -- TYPICAL GATE TRIGGER VOLTAGE
0.1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) VGT , GATE TRIGGER VOLTAGE (NORMALIZED) 2.0 OFF-STATE VOLTAGE = 12 Vdc ALL MODES
1.6
1.2
0.8
0.4 0 60
40
20 20 0 40 TC, CASE TEMPERATURE (°C)
60
80
Motorola Thyristor Device Data
377
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