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Part: MAC212-8
Category:
Discrete
-> Thyristors
-> Triacs
Description: -
Company: Motorola Semiconductor Products
Datasheet: Download MAC212-8 datasheet File size : 886 kB
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Datasheet text preview:
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Triacs
Silicon Bidirectional Thyristors
. . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. · Blocking Voltage to 800 Volts · All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability · Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability · Gate Triggering Guaranteed in Three Modes (MAC212 Series) or Four Modes (MAC212A Series)
MAC212 Series MAC212A Series
TRIACs 12 AMPERES RMS 200 thru 800 VOLTS
MT1 MT2 G
CASE 221A-04 (TO-220AB) STYLE 4
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating Repetitive Peak Off-State Voltage(1) (TJ = 40 to +125°C, 1/2 Sine Wave 50 to 60 Hz, Gate Open) MAC212-4, MAC212A4 MAC212-6, MAC212A6 MAC212-8, MAC212A8 MAC212-10, MAC212A10 On-State Current RMS (TC = +85°C) Full Cycle Sine Wave 50 to 60 Hz Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, TC = +85°C) preceded and followed by Rated Current Circuit Fusing Considerations (t = 8.3 ms) Peak Gate Power (TC = +85°C, Pulse Width = 10 µs) Average Gate Power (TC = +85°C, t = 8.3 ms) Peak Gate Current (TC = +85°C, Pulse Width = 10 µs) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM 200 400 600 800 IT(RMS) ITSM I2t PGM PG(AV) IGM TJ Tstg 12 100 40 20 0.35 2 40 to +125 40 to +150 Amp Amp A2s Watts Watt Amp °C °C Value Unit Volts
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Motorola Thyristor Device Data
383
MAC212 Series MAC212A Series
THERMAL CHARACTERISTICS
Characteristic T h e r m a l Resistance, Junction to Case Symbol RJC Max 2.1 Unit °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Peak Blocking Current (Either Direction) (VD = Rated VDRM, Gate Open) TJ = 25°C TJ = +125°C Peak On-State Voltage (Either Direction) ITM = 17 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle Gate Trigger Current (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) MT2(+), G() MT2(), G() MT2(), G(+) "A" SUFFIX ONLY Gate Trigger Voltage (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) MT2(+), G() MT2(), G() MT2(), G(+) "A" SUFFIX ONLY (Main Terminal Voltage = Rated VDRM, RL = 10 k, TJ = +125°C) MT2(+), G(+); MT2(), G(); MT2(+), G() MT2(), G(+) "A" SUFFIX ONLY Holding Current (Either Direction) (Main Terminal Voltage = 12 Vdc, Gate Open, Initiating Current = 500 mA) Tu r n-On Time (VD = Rated VDRM, ITM = 17 A, IGT = 120 mA, Rise Time = 0.1 µs, Pulse Width = 2 µs) Critical Rate of Rise of Commutation Voltage (VD = Rated VDRM, ITM = 17 A, Commutating di/dt = 6.1 A/ms, Gate Unenergized, TC = +85°C) Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Voltage Rise, Gate Open, TC = +85°C) Symbol IDRM -- -- -- -- 1.3 10 2 1.75 Min Typ Max Unit µA mA Volts mA -- -- -- -- VGT -- -- -- -- 0.2 0.2 IH -- 0.9 0.9 1.1 1.4 -- -- 6 2 2 2 2.5 -- -- 50 mA 12 12 20 35 50 50 50 75 Volts
p 2%
VTM IGT
--
tgt
--
1.5
--
µs
dv /dt(c )
--
5
--
V/µs
dv /dt
--
100
--
V/µs
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( ° C)
FIGURE 1 -- CURRENT DERATING
PD(AV), AVERAGE POWER DISSIPATION (WATT) 125 28 24 20 16 12 8.0 4.0 0 0
FIGURE 2 -- POWER DISSIPATION
115 = 30° 85 = CONDUCTION ANGLE 60° 90° 180° dc
= CONDUCTION ANGLE dc = 180° 90° 60° 30°
105
95
75 0 2.0 4.0 6.0 8.0 10 12 14 IT(RMS), RMS ON-STATE CURRENT (AMP)
2.0
4.0
6.0
8.0
10
12
14
IT(RMS), RMS ON-STATE CURRENT (AMP)
384
Motorola Thyristor Device Data
MAC212 Series MAC212A Series
FIGURE 3 -- MAXIMUM ON-STATE CHARACTERISTICS
100 IT, INSTANTANEOUS ON-STATE CURRENT (AMPS) 50 20 10 5.0 TJ = 25°C TJ = 125°C
FIGURE 4 -- MAXIMUM NON-REPETITIVE SURGE CURRENT
100 ITSM , PEAK SURGE CURRENT (AMP) 80 60 CYCLE TC = 70°C f = 60 Hz Surge is preceded and followed by rated current 2.0 3.0 NUMBER OF CYCLES 5.0 7.0 10
40
20 0 1.0
2.0 1.0 0.5
0.2 0.1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
FIGURE 5 -- TYPICAL GATE TRIGGER VOLTAGE
VGT , GATE TRIGGER VOLTAGE (NORMALIZED) 2.0 OFF-STATE VOLTAGE = 12 Vdc ALL MODES
1.6
1.2
0.8
0.4 0 60
40
20
0
20
40
60
80
TC, CASE TEMPERATURE (°C)
FIGURE 6 -- TYPICAL GATE TRIGGER CURRENT
I GT, GATE TRIGGER CURRENT (NORMALIZED) 2.0 IH , HOLDING CURRENT (NORMALIZED) OFF-STATE VOLTAGE = 12 Vdc ALL MODES 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 60
FIGURE 7 -- TYPICAL HOLDING CURRENT
1.6
OFF-STATE VOLTAGE = 12 Vdc ALL MODES
1.2
0.8
0.4
0 60
40
20
0
20
40
60
80
40
20
0
20
40
60
80
TC, CASE TEMPERATURE (°C)
TC, CASE TEMPERATURE (°C)
Motorola Thyristor Device Data
385
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