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Part: MBC13900
Category:
Description: NPN Silicon Low Noise Transistor
Company: Motorola Semiconductor Products
Datasheet: Download MBC13900 datasheet File size : 28 kB
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Freescale Semiconductor, Inc.
Technical Data
MBC13900/D Rev. 0, 06/2002 NPN Silicon Low Noise Transistor
MBC13900
(Scale 2:1)
Package Information Plastic Package Case 318M (SOT-343)
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Ordering Information
Devi ce MB C13900T 1 Marking 900 Package SOT-343
The MBC13900 is a high performance transistor fabricated using Motorola's 15 GHz f bipolar IC process. It is housed in the 4-lead SC-70 (SOT-343) surface mount plastic package resulting in a parasitic effect reduction and RF performance enhancements. The high performance at low power makes the MBC13900 suitable for front-end applications in portable wireless systems such as pagers, cellular and cordless phones. · · · · · Low Noise Figure, NFmin = 0.8 dB (Typ) @ 0.9 GHz, 2.0 V and 5.0 mA Maximum Stable Gain, 22 dB @ 0.9 GHz, 2.0 V and 5.0 mA Output Third Order Intercept, OIP3 = 18 dBm (Typ) @ 2.0 V and 5.0 mA Ultra small SOT-343 Surface Mount Package Available Only in Tape and Reel Packaging
Base 2
3 Emitter
Emitter 1
4 Collector
Figure 1. Pin Connections
Definitive Data: Motorola reserves the right to change the Production detail specifications as may be required to permit improvements in the design of its product. © Motorola, Inc., 2002. All rights reserved.
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Electrical Specifications
Freescale Semiconductor, Inc.
1 Electrical Specifications
Table 1. Maximum Ratings
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Power Dissipation @ TC = 75 C Derate Linearity above TC = 75 C at Collector Current-Continuous Symbol VCEO VCBO VEBO PD(max) IC TJ(max) Tstg Value 6.5 8.0 3.0 0.188 2.5 20 150 -55 to 150 Unit Vdc Vdc Vdc W mW/ C mA C C
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Maximum Junction Temperature Storage Temperature
NOTES: 1. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the limits in the Electrical Characteristics or Recommended Operating Conditions tables. 2. ESD (electrostatic discharge) immunity meets Human Body Model (HBM) 400 V and Machine Model (MM) 50 V. Additional ESD data available upon request.
Table 2. Thermal Characteristic
Characteristic Thermal Resistance, Junction-to-Case Symbol RJC Max 400 Unit C/W
NOTES: To calculate the junction termpature use TJ = (PD x RJC) + TC. The case temperature measured on collector lead adjacent to the package body.
Table 3. Electrical Characteristics
Characteristic OFF Characteristic [Note 1] Collector-Emitter Breakdown Voltage (IC = 0.1 mA, IB = 0) Collector-Base Breakdown Voltage (IC = 0.1 mA, IE = 0) Emitter-Base Breakdown Voltage (IE = 0.1 mA, IC = 0) Collector Cutoff Current (VCB = 7.0 V, IE = 0) Emitter Cutoff Current (VEB = 2.0 V, IC = 0) Base Cutoff Current (VCE = 5.0 V, IB = 0) ON Characteristic [Note 1] DC Current Gain (VCE = 2.0 V, IC = 5.0 mA) hFE 100 200 V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO ICEO 6.5 8.0 3.0 7.5 12 4.0 0.1 0.1 0.1 Vdc Vdc Vdc A A A Symbol M in Ty p Max Unit
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MOTOROLA
Freescale Semiconductor, Inc. Electrical Specifications
Table 3. Electrical Characteristics (Continued)
Characteristic Dynamic Characteristics Current Gain Bandwidth Product (VCE = 2.0 V, IC = 15 mA, f = 0.9 GHz) Performance Characteristic Insertion Gain VCE = 2.0 V, IC = 5.0 mA, f = 0.9 GHz VCE = 2.0 V, IC = 5.0 mA, f = 1.9 GHz VCE = 3.0 V, IC = 3.0 mA, f = 0.9 GHz VCE = 3.0 V, IC = 3.0 mA, f = 1.9 GHz |S21|2 dB 18.5 13.5 16.5 12.5 19.5 14.5 17.5 13.5 dB 22 18 21 17.5 NFmin 23 19 22 18.5 0.8 0.9 0.8 0.9 dB 0.9 1.1 0.9 1.1 dB 22 16 21 15 18 21 13.5 19 dBm f 15 GHz Symbol M in Ty p Max Unit
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Maximum Stable Gain and/or Maximum Available Gain [Note 2] VCE = 2.0 V, IC = 5.0 mA, f = 0.9 GHz VCE = 2.0 V, IC = 5.0 mA, f = 1.9 GHz VCE = 3.0 V, IC = 3.0 mA, f = 0.9 GHz VCE = 3.0 V, IC = 3.0 mA, f = 1.9 GHz Minimum Noise Figure VCE = 2.0 V, IC = 5.0 mA, f = 0.9 GHz VCE = 2.0 V, IC = 5.0 mA, f = 1.9 GHz VCE = 3.0 V, IC = 3.0 mA, f = 0.9 GHz VCE = 3.0 V, IC = 3.0 mA, f = 1.9 GHz Associated Gain at Minimum Noise Figure VCE = 2.0 V, IC = 5.0 mA, f = 0.9 GHz VCE = 2.0 V, IC = 5.0 mA, f = 1.9 GHz VCE = 3.0 V, IC = 3.0 mA, f = 0.9 GHz VCE = 3.0 V, IC = 3.0 mA, f = 1.9 GHz Output Third Order Intercept [Note 3] (VCE = 2.0 V, IC = 5.0 mA, f = 0.9 GHz) (VCE = 2.0 V, IC = 5.0 mA, f = 1.9 GHz) (VCE = 3.0 V, IC = 3.0 mA, f = 0.9 GHz) (VCE = 3.0 V, IC = 3.0 mA, f = 1.9 GHz)
NOTES: 1. Pulse width 300 µs, duty cycle 2% pulsed. 2. Maximum Available Gain and Maximum Stable Gain are defined by the K factor as follows: S 21 S 21 2 M A G = ---------- K ± K 1 , if K > 1, M S G = ---------- , if K < 1 S S 12 12 3. Zin and Zout matched for optimum IP3.
MSG, MAG
GNF
OIP3
MOTOROLA
MBC13900 Technical Data For More Information On This Product, Go to: www.freescale.com
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