|
|
Part: MHW1810-002
Category:
RF & Microwaves
-> Amplifiers
Description: MHW1810-1, MHW1810-2 1805-1880 Mhz, 10 W RF Power Ldmos Amplifiers - Archived
Company: Motorola Semiconductor Products
Datasheet: Download MHW1810-002 datasheet File size : 82 kB
Request For quote: Find where to buy MHW1810-002
Datasheet text preview:
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MHW1810/D
The RF Line
PCS Band RF Power LDMOS Amplifiers
· Specified 26 Volts, 18051880 MHz, Class AB Characteristics Output Power = 16 Watts CW Typ Power Gain = 26 dB Typ @ 10 Watts (MHW18101) Power Gain = 34 dB Typ @ 10 Watts (MHW18102) Efficiency = 34% Min @ 10 Watts · 50 Input/Output System · Designed for GSM Linearity Requirements
MHW1810-1 MHW1810-2
18051880 MHz, 10 W RF POWER LDMOS AMPLIFIERS
ARCHIVE INFORMATION
CASE 301AW02, STYLE 1
MAXIMUM RATINGS
Rating DC Supply Voltage DC Bias Voltage RF Input Power RF Output Power Operating Case Temperature Range Storage Temperature Range MHW18101 MHW18102 Symbol VS Vbias Pin Pout TC Tstg Value 28 28 21 16 20 10 to +90 30 to +100 Unit Vdc Vdc dBm W
°C °C
ELECTRICAL CHARACTERISTICS (TC = +25°C, VS = 26 Vdc; Vbias = 5 Vdc; 50 system, unless otherwise noted)
Characteristic Frequency Range Quiescent Current (Pin = 0 mW) Bias Current Output Power at 1 dB Compression Power Gain (Pout = 10 W) Power Gain (Pout = 10 W) Efficiency (Pout = 10 W) Input VSWR (Pout = 10 W) Harmonics at 2fo (Pout = 10 W) Harmonics at 3fo (Pout = 10 W) Reverse IMD; Pout = 10 W; Preverse = 40 dBc (F1 = F0 ±200 kHz @ 40 dBc) Load Mismatch Stress Load VSWR = 5:1, All Phase Angles Stability (Pout = 10 mW to 10 W, VS 26 Vdc) Load VSWR = 5:1, All Phase Angles MHW18101 MHW18102 Symbol BW IDQ Ibias P1dB Gp VSWRin H2 H3 IMDr -- Min 1805 100 -- 10 24 32 34 -- -- -- -- Typ -- -- -- 14 26 34 -- -- -- -- -- Max 1880 150 2 -- 28 36 -- 1.8:1 35 45 50 Unit MHz mA mA W dB % -- dBc dBc dBc
No Degradation in Output Power All Spurious Outputs More Than 60 dB Below Desired Signal
NOTE CAUTION MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
REV 2
MOTO Inc. 2002 Motorola,ROLA RF DEVICE DATA
MHW18101 MHW18102 1
ARCHIVE INFORMATION
EXTREME CASE ELECTRICAL CHARACTERISTICS (TC = 10 to +85°C, VS = 23.5 to 26 Vdc, Vbias = 3 to 26 Vdc, 50 system,
unless otherwise noted) Characteristic Frequency Range Quiescent Current (Pin = 0 mW) Bias Current Output Power at 1 dB Compression Power Gain Variation for a Given Part (Pout = 10 W) Efficiency (Pout = 10 W) Input VSWR Harmonics at 2fo Harmonics at 3fo Symbol BW IDQ Ibias P1dB Gp VSWRin H2 H3 IMDr -- Min 1805 100 -- 8 -- 32 -- -- -- -- Typ -- -- -- -- 5 -- -- -- -- -- Max 1880 160 2 -- 6.5 -- 2:1 35 45 50 Unit MHz mA mA W dB % -- dBc dBc
ARCHIVE INFORMATION
Load Mismatch Stress Load VSWR = 5:1, All Phase Angles Stability (Pout = 10 mW to 10 W, VS 26 Vdc) Load VSWR = 5:1, All Phase Angles
No Degradation in Output Power All Spurious Outputs More Than 60 dB Below Desired Signal
BIAS REGULATION
RF IN
Vbias
VS
RF OUT
Figure 1. Internal Diagram
MHW18101 MHW18102 2
MOTOROLA RF DEVICE DATA
ARCHIVE INFORMATION
Reverse IMD; Pout = 10 W; Preverse = 40 dBc (F1 = F0 ±200 kHz @ 40 dBc)
dBc
TYPICAL CHARACTERISTICS MHW18101
44 42 Pout , OUTPUT POWER (dBm) 40 , EFFICIENCY (%) 38 36 34 32 30 28 26 24 22 Pout @ 1880 MHz Pout @ 1805 MHz 50 40 30 20 10 @ 1880 MHz 60
ARCHIVE INFORMATION
0
5
10 15 Pin, INPUT POWER (dBm)
20
25
0
2
4
6 12 8 10 14 Pin, INPUT POWER (dBm)
16
18
20
Figure 2. Output Power versus Input Power
Figure 3. Efficiency versus Input Power
32 28 G p , POWER GAIN (dB) Pout = 10 W G p , POWER GAIN (dB) 24 20 16 12 8 4 0 1600 1700 1800 1900 2100 2000 f, FREQUENCY (MHz) 2200 2300
30 29 28 27 26 25 24 23 22 21 1800 1810 1820 1830 1840 1850 1860 f, FREQUENCY (MHz) 1870 1880 1890 TC = 85°C TC = -10°C TC = 25°C Pout = 10 W
Figure 4. Power Gain versus Frequency
Figure 5. Gain versus Frequency
40 G p , POWER GAIN VARIATION (dB) 39.5 39 , EFFICIENCY (%) 38.5 38 37.5 37 36.5 36 35.5 35 1800 1810 1820 1830 1840 1850 1860 Pout = 10 W 1870 1880 1890 TC = 85°C TC = 25°C TC = -10°C
1.9 1.7 1.5 1.3 1.1 0.9 0.7 0.5 0.3 0.1 -0.1 -0.3 -0.5 1800 1810
Pout = 0.5 W to 10 W
TC = 85°C TC = 25°C
TC = -10°C
1820
1830 1840
1850
1860
1870 1880
1890
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 6. Efficiency versus Frequency
Figure 7. Power Gain Variation versus Frequency
MOTOROLA RF DEVICE DATA
MHW18101 MHW18102 3
ARCHIVE INFORMATION
0
Others parts begin by mh
|
|
|
