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Part: MHW1910-001
Category:
RF & Microwaves
-> Amplifiers
Description: MHW1910-1 1930-1990 Mhz, 10 W RF Power Ldmos Amplifier - Archived
Company: Motorola Semiconductor Products
Datasheet: Download MHW1910-001 datasheet File size : 82 kB
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Datasheet text preview:
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MHW1910/D
The RF Line
PCS Band RF Power LDMOS Amplifier
· Specified 26 Volts, 19301990 MHz, Class AB Characteristics Output Power = 14 Watts CW Typ Power Gain = 26 dB Typ @ 10 Watts Efficiency = 34% Min @ 10 Watts · 50 Input/Output System · Designed for GSM Linearity Requirements
MHW1910-1
19301990 MHz, 10 W RF POWER LDMOS AMPLIFIER
ARCHIVE INFORMATION
CASE 301AW02, STYLE 1
MAXIMUM RATINGS
Rating DC Supply Voltage DC Bias Voltage RF Input Power RF Output Power Operating Case Temperature Range Storage Temperature Range Symbol VS Vbias Pin Pout TC Tstg Value 28 28 21 20 10 to +90 30 to +100 Unit Vdc Vdc dBm W
°C °C
ELECTRICAL CHARACTERISTICS (TC = +25°C, VS = 26 Vdc; Vbias = 5 Vdc; 50 system, unless otherwise noted)
Characteristic Frequency Range Quiescent Current (Pin = 0 mW) Bias Current Output Power at 1 dB Compression Power Gain (Pout = 10 W) Efficiency (Pout = 10 W) Input VSWR Harmonics at 2fo Harmonics at 3fo Reverse IMD; Pout = 10 W; Preverse = 40 dBc (F1 = F0 ±200 kHz @ 40 dBc) Load Mismatch Stress Load VSWR = 5:1, All Phase Angles Stability (Pout = 10 mW to 10 W, VS 26 Vdc) Load VSWR = 5:1, All Phase Angles Symbol BW IDQ Ibias P1dB Gp VSWRin H2 H3 IMDr -- Min 1930 100 -- 10 24 34 -- -- -- -- Typ -- -- -- 14 26 -- -- -- -- -- Max 1990 150 2 -- 28 -- 1.8:1 35 45 50 Unit MHz mA mA W dB % -- dBc dBc dBc
No Degradation in Output Power All Spurious Outputs More Than 60 dB Below Desired Signal
NOTE CAUTION MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
REV 2
MOTO Inc. 2002 Motorola,ROLA RF DEVICE DATA
MHW19101 1
ARCHIVE INFORMATION
EXTREME CASE ELECTRICAL CHARACTERISTICS (TC = 10 to +85°C, VS = 23.5 to 26 Vdc, Vbias = 3 to 26 Vdc, 50 system,
unless otherwise noted) Characteristic Frequency Range Quiescent Current (Pin = 0 mW) Bias Current Output Power at 1 dB Compression Power Gain Variation for a Given Part (Pout = 10 W) Efficiency (Pout = 10 W) Input VSWR Harmonics at 2fo Harmonics at 3fo Symbol BW IDQ Ibias P1dB Gp VSWRin H2 H3 IMDr -- Min 1930 100 -- 8 -- 32 -- -- -- -- Typ -- -- -- -- 5 -- -- -- -- -- Max 1990 160 2 -- 6.5 -- 2:1 35 45 46 Unit MHz mA mA W dB % -- dBc dBc
ARCHIVE INFORMATION
Load Mismatch Stress Load VSWR = 5:1, All Phase Angles Stability (Pout = 10 mW to 10 W, VS 26 Vdc) Load VSWR = 5:1, All Phase Angles
No Degradation in Output Power All Spurious Outputs More Than 60 dB Below Desired Signal
BIAS REGULATION
RF IN
Vbias
VS
RF OUT
Figure 1. Internal Diagram
MHW19101 2
MOTOROLA RF DEVICE DATA
ARCHIVE INFORMATION
Reverse IMD; Pout = 10 W; Preverse = 40 dBc (F1 = F0 ±200 kHz @ 40 dBc)
dBc
TYPICAL CHARACTERISTICS
44 42 Pout , OUTPUT POWER (dBm) 40 , EFFICIENCY (%) 38 36 34 32 30 28 26 24 22 Pout @ 1990 MHz Pout @ 1930 MHz 50 40 30 20 10 0 60
@ 1990 MHz
ARCHIVE INFORMATION
Figure 2. Output Power versus Input Power
Figure 3. Efficiency versus Input Power
28 24 G p , POWER GAIN (dB) G p , POWER GAIN (dB) 20 16 12 8 4 0 1700 1800 1900 2000 f, FREQUENCY (MHz) 2100 2200 Pout = 10 W
30 29 28 27 26 25 24 23 22 21 1920 1930 1940 1950 1960 1970 f, FREQUENCY (MHz) 1980 1990 2000 TC = 85°C TC = -10°C Pout = 10 W
TC = 25°C
Figure 4. Power Gain versus Frequency
Figure 5. Gain versus Frequency
43 G p , POWER GAIN VARIATION (dB) 42 41 , EFFICIENCY (%) 40 39 38 37 36 35 1920 1930 1940 1950 1960 1970 TC = 85°C Pout = 10 W 1980 1990 2000 TC = 25°C TC = -10°C
1.5 1.3 1.1 0.9 0.7 0.5 0.3 0.1 -0.1 -0.3 -0.5 1920 1930 1940 1950 1960 1970 1980 1990 2000 TC = 85°C TC = 25°C TC = -10°C Pout = 0.5 W to 10 W
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 6. Efficiency versus Frequency
Figure 7. Power Gain Variation versus Frequency
MOTOROLA RF DEVICE DATA
MHW19101 3
ARCHIVE INFORMATION
0
2
4
6
8 10 12 14 16 Pin, INPUT POWER (dBm)
18
20
22
24
0
2
4
6
8 10 12 14 16 Pin, INPUT POWER (dBm)
18
20
22
24
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