Details, datasheet, quote on part number: MR2A16AVYS35
PartMR2A16AVYS35
Category
Description256K x 16-bit 3.3-v Asynchronous Magnetoresistive RAM
CompanyMotorola Semiconductor Products
DatasheetDownload MR2A16AVYS35 datasheet
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Features, Applications

Introduction The a 4,194,304-bit magnetoresistive random access memory (MRAM) device organized as 262,144 words of 16 bits. The MR2A16A is equipped with chip enable (E), write enable (W), and output enable (G) pins, allowing for significant system design flexibility without bus contention. Because the MR2A16A has separate byte-enable controls (LB and UB), individual bytes can be written and read. MRAM is a nonvolatile memory technology that protects data in the event of power loss and does not require periodic refreshing. The MR2A16A is the ideal memory solution for applications that must permanently store and retrieve critical data quickly. The MR2A16A is available 400-mil, 44-lead plastic small-outline TSOP type-II package with an industry-standard center power and ground SRAM pinout. The MR2A16A is available in Commercial to 70C), Industrial to 85C) and Extended to 105C) ambient temperature ranges. Features

Single 3.3-V power supply Commercial temperature range to 70C), Industrial temperature range to 85C) and Extended temperature range to 105C) Symmetrical high-speed read and write with fast access time (35 ns) Flexible data bus control 8 bit or 16 bit access Equal address and chip-enable access times Automatic data protection with low-voltage inhibit circuitry to prevent writes on power loss All inputs and outputs are transistor-transistor logic (TTL) compatible Fully static operation Full nonvolatile operation with 20 years minimum data retention

UPPER BYTE OUTPUT ENABLE LOWER BYTE OUTPUT ENABLE

8 10 ROW DECODER COLUMN DECODER SENSE AMPS UPPER BYTE OUTPUT BUFFER LOWER BYTE OUTPUT BUFFER 8 FINAL WRITE DRIVERS UPPER BYTE WRITE DRIVER LOWER BYTE WRITE DRIVER 8

UPPER BYTE WRITE ENABLE LOWER BYTE WRITE ENABLE

Signal Name DQL[7:0] DQU[15:8] VDD VSS NC Function Address input Chip enable Write enable Output enable Upper byte select Lower byte select Data I/O, lower byte Data I/O, upper byte Power supply Ground Do not connect this pin

LB1 UB1 Mode Not selected Output disabled Output disabled Lower byte read Upper byte read Word read Lower byte write Upper byte write Word write VDD Current ISB1, ISB2 IDDA DQL[7:0]2 Hi-Z DOut Hi-Z DOut DIn Hi-Z DIn DQU[15:8]2 Hi-Z DOut Hi-Z DIn

NOTES: H = high, L = low, X = don't care 2 Hi-Z = high impedance

Absolute Maximum Ratings This device contains circuitry to protect the inputs against damage caused by high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage greater than maximum rated voltages to these high-impedance (Hi-Z) circuits. The device also contains protection against external magnetic fields. Precautions should be taken to avoid application of any magnetic field more intense than the maximum field intensity specified in the maximum ratings.


 

Related products with the same datasheet
MR2A16ACYS35
MR2A16AVTS35C
MR2A16AYS35
MR2A16A_1
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