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Part: MRF21120S
Category:
RF & Microwaves
-> Transistors
-> FETs
-> MOSFETs
-> Power
Description: MRF21120 2170 Mhz, 120 W, 28 V Lateral N-channel RF Power MOSFETs
Company: Motorola Semiconductor Products
Datasheet: Download MRF21120S datasheet File size : 412 kB
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Datasheet text preview:
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF21120/D
The RF SubMicron MOSFET Line
RF Power Field Effect Transistor
NChannel EnhancementMode Lateral MOSFET
Designed for WCDMA base station applications with frequencies from 2110 t o 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier a p p l i c a t i o n s . To be used in Class AB for PCNPCS/cellular radio and WLL applications. · WCDMA Performance @ 45 dBc, 5 MHz Offset, 15 DTCH, 1 Perch Output Power -- 14 Watts (Avg.) Power Gain -- 11.5 dB Efficiency -- 16% · Internally Matched, Controlled Q, for Ease of Use · High Gain, High Efficiency and High Linearity · Integrated ESD Protection · Designed for Maximum Gain and Insertion Phase Flatness · Capable of Handling 10:1 VSWR, @ 28 Vdc, 2170 MHz, 120 Watts (CW) Output Power · Excellent Thermal Stability · Characterized with Series Equivalent LargeSignal Impedance Parameters
MRF21120
2170 MHz, 120 W, 28 V LATERAL NCHANNEL RF POWER MOSFET
CASE 375D04, STYLE 1 NI1230
MAXIMUM RATINGS
Rating DrainSource Voltage GateSource Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 0.5, +15 389 2.22 65 to +150 200 Unit Vdc Vdc Watts W/°C °C °C
ESD PROTECTION CHARACTERISTICS
Test Conditions Human Body Model Machine Model Class 1 (Minimum) M3 (Minimum)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol R J C Max 0.45 Unit °C/W
NOTE CAUTION MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
REV 8
MOTO Inc. 2003 Motorola,ROLA RF DEVICE DATA
MRF21120 1
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS (1) DrainSource Breakdown Voltage (VGS = 0 Vdc, ID = 20 µAdc) GateSource Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc ) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) ON CHARACTERISTICS (1) Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) Gate Threshold Voltage (VDS = 10 V, ID = 200 µA) Gate Quiescent Voltage (VDS = 28 V, ID = 500 mA) DrainSource OnVoltage (VGS = 10 V, ID = 2 A) DYNAMIC CHARACTERISTICS (1) Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2) CommonSource Amplifier Power Gain (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 f1 = 2170.0 MHz, f2 = 2170.1 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 f1 = 2170.0 MHz, f2 = 2170.1 MHz) Intermodulation Distortion (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 f1 = 2170.0 MHz, f2 = 2170.1 MHz) Input Return Loss (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 f1 = 2170.0 MHz, f2 = 2170.1 MHz) CommonSource Amplifier Power Gain (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 f1 = 2140.0 MHz, f2 = 2140.1 MHz) CommonSource Amplifier Power Gain (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 f1 = 2110.0 MHz, f2 = 2110.1 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 f1 = 2110.0 MHz, f2 = 2110.1 MHz) Intermodulation Distortion (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 f1 = 2110.0 MHz, f2 = 2110.1 MHz) Input Return Loss (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 f1 = 2110.0 MHz, f2 = 2110.1 MHz) Gps 500 mA, 500 mA, IMD 500 mA, IRL 500 mA, Gps 500 mA, Gps 500 mA, 500 mA, IMD 500 mA, IRL 500 mA, P1dB -- 120 -- Watts -- 12 -- dB -- 31 -- dB -- 34.5 -- % -- 11.5 -- dB -- 11.5 -- dB -- -- 31 12 28 9 dB dB 10.5 30 11.4 34.5 -- -- % dB Crss -- 2.8 -- pF gfs VGS(th) VGS(Q) VDS(on) -- 2.5 3 -- 4.8 3 3.9 0.38 -- 3.8 5 0.5 S Vdc Vdc Vdc V(BR)DSS IGSS IDSS 65 -- -- -- -- -- -- 1 10 Vdc µAdc µAdc Symbol Min Typ Max Unit
Power Output, 1 dB Compression Point (VDD = 28 Vdc, CW, IDQ = 2 500 mA, f1 = 2170.0 MHz) (1) Each side of device measured separately. (2) Device measured in pushpull configuration.
MRF21120 2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS -- continued (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2) (continued) CommonSource Amplifier Power Gain (VDD = 28 Vdc, Pout = 120 W CW, IDQ = 2 f1 = 2170.0 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 120 W CW, IDQ = 2 f1 = 2170.0 MHz) Gps 500 mA, 500 mA, -- 42 -- % -- 10.5 -- dB
Output Mismatch Stress (VDD = 28 Vdc, Pout = 120 W CW, IDQ = 2 500 mA, f = 2.17 GHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) (2) Device measured in pushpull configuration.
No Degradation In Output Power Before and After Test
MOTOROLA RF DEVICE DATA
MRF21120 3
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